FCHS10A08
Abstract: newave power MARK WF RF
Contextual Info: x y — b '^ y 10A 80V Tjw150V SB D Fully Molded similar to TO-220AB Cathode common FC H S 10A 08 tü fft Nihon Inter Electronics Corporation Specification '> 3 -y h Construction y T y 4 y f- K Schottky Barrier Diode if! ill Application High Frequency Rectification
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80vtjw150v-220abfchs10a08ul94v-0issppp+3ul94v-0newave powermark wf rf
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FSQS15A045
Abstract: 118T
Contextual Info: 15A 45V Tjw150V Fully Molded simitar to TO-220 FSQ S15A 045 tti* * Nihon Inter Electronics Corporation Specification -y h yT Schottky B arrier Diode Application H igh Frequency Rectification • I K Construction MAXIMUM RATINGS Ta=25°C: U nless otherw ise specified
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tjw150vo-220fsqs15a045/l-50hz+3fsqs15arul94v-0118t
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ci 4502
Abstract: ECT180
Contextual Info: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified
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35vtjw150vfsqs04a03550hziesmffikft20mvrms+4100khzul94v-0ci 4502ect180
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FCHS20A
Abstract: WH 1602 K FCHS20A045 RECT18
Contextual Info: 20A 45V Tjw150V Fully Molded similar to TO-220AB FCHS20A045 0 * ^ Nihon Inter Electronics Corporation Specification «5t 'y 3 y h Construction ff lii Application J iy Ç /iË fê y r^V K Schottky Barrier Diode rWijRliiSSIifliiffl High Frequency Rectification
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tjw150vo-220abfchs20a04520mvrms+7100khzfchs20arul94v-0mul94v-0fchs20awh 1602 krect18
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10a45
Abstract: marking WMM
Contextual Info: S BD Anode camman 10A 45V Tjw150V FRQS10A045 Fully Molded sim ilar to TO-22QAB ttíf# 0 * ^ Nihon Inter Electronics Corporation Specification. mm ^ Construction '> 3 y Schottky Barrier Diode Application High FVequenty Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified
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tjw150vtq-220abfrqs10a04520mvrms+5100khzul94v-0isul94v-010a45marking wmm
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FCQS30A045
Contextual Info: 30A 45V Tjw150V # y — h '= i* y SBD Fully Molded similar to TO-22QAB Cathode common FC Q S30A045 tt ti* Nihon Inter Electronics Corporation Specification ' > h -y h y T Hr— K Construction Schottky B arrier Diode Application H igh Frequency Rectification
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tjw150vo-22qabfcqs30a0451181c+3fcqs30arul94v-0iul94v-0
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FCHS30A08
Abstract: FCHS30A Diode Marking WA
Contextual Info: 30A 80V Tjw150V Fully Molded sim ilar lo FCHS30A08 ft* * TO-220AB Nihon Inter Electronics Corporation Specification 'y 3 -y V Construction f f lìÉ Application y T ^ Schottky B arrier Diode iWjJr I H igh Frequency' Rectification MAXIMUM RATINGS T a= 2 5 °C U nless otherw ise specified
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80vtjw150vt0-220abfchs30a0820mvrms+6100khzfchs30arul94v-ogul94v-0fchs30adiode marking wa
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fcqs10a045
Abstract: 10a45 IMTIA
Contextual Info: SBD Cathode common 10A 45V Tjw150V Fully Molded similar to TO-22QAB FCQS10A045 Nihon Inter Electronics Corporation Specification. mm Construction v ' s y h y 7 y j Schottky B arrier Diode Application H igh Frequency Rectification k MAXIMUM RATINGS T a = 25°C U nless otherw ise specified
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10a45vtjw150ttq-220abfcqs10a045ul94v-0+210a45imtia
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FRQS20A045
Abstract: UL94V-01
Contextual Info: SBD Anode common 20A 45V Tjw150V Fully Molded similar to TO-22QAB FRQS20A045 tttiS Nihon Inter Electronics Corporation Specification '> 3 '7 h y r yj Construction Schottky Barrier Diode Application High Frequency Rectification • k MAXIMUM RATINGS Ta = 25°C Unless otherwise specified
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45vtjw150vo-22qabfrqs20a045frqs20ar+3ul94v-01ggpul94v-0ul94v-01
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4A80
Contextual Info: 4A 80V Tjw150V Fully Molded similar to TO-220AC h FSHS04A08 tbfl* 0 * ^ tts tè tt Nihon Inter Electronics Corporation Specification ^ y 7 ¥ 4 Construction Schottky Barrier Diode Application High Frequency Rectification B K I MAXIMUM RATINGS Ta=25°C Unless otherwise specified
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4a80vtm150vt0-220acfshs04a08fshs04ar+2ul94v-04a80
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FCQS20A045
Abstract: FCQS20
Contextual Info: 20A 45V Tjw150V 2 y — h' = • ¥ > - SBD Fully Molded similar to TO-22QAB Cathode mmmon FCQS20A045 tttf* Nihon Inter Electronics Corporation Specification Construction '> 3 y h y 7 Schottky Barrier Diode Application High Frequency Rectification M cxm z h- K
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20a45vttq-220abfcqs20a045fcqs20ar+2ul94v-0fcqs20
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FSQS05A045
Abstract: IBT 1/2 20M
Contextual Info: Fully Molded sim ilar to TO-220AC 'n irfrn Z ï h 5A 45V Tjw150V FSQ S05A045 ttti* Nihon Inter Electronics Corporation Specification. Construction ffljÉ Application H a y h y r Schottky Barrier Diode k High Frequency Rectification MAXIMUM RATINGS Ta=25‘C: Unless otherwise specified
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5a45vto-22qacfsqs05a04520mvrms+4100khzfsqs05arjul94v-0ibt 1/2 20m
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