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    NH TRANSISTOR Search Results

    NH TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    NH TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: R High-Precision Fiber-optic Amplifier E3X-NH The E3X-NH Employs a 16-Bit Processor as An Industry First H An Automatic Sensitivity Adjustment feature allows stable detection of objects in frequently changing environments H Three teach modes for optimal sensing


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    16-Bit 1-800-55-OMRON PDF

    E3X-NH41

    Abstract: E3X-NH11 E32-T16P E3XNH51 OMRON E32-D32 E32-L25A E32-T24 E39-F4 E3X-NH21 E3X-NH51
    Contextual Info: R High-Precision Fiber-optic Amplifier E3X-NH The E3X-NH Employs a 16-Bit Processor as An Industry First H An Automatic Sensitivity Adjustment feature allows stable detection of objects in frequently changing environments H Three teach modes for optimal sensing


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    16-Bit 1-800-55-OMRON E3X-NH41 E3X-NH11 E32-T16P E3XNH51 OMRON E32-D32 E32-L25A E32-T24 E39-F4 E3X-NH21 E3X-NH51 PDF

    electrolytic capacitor 1500 uf with ESR rating

    Abstract: ECES1HG682U C2000H ECES1AG ECES1VG472M
    Contextual Info: Aluminum Electrolytic Capacitors/ NH Snap-in type Series: NH Discontinued Type: TS • Features Life time : 105°C 2000 h ■Specifications Operating Temp. Range Rated W.V. Range 10 to 100V.DC 160 to 250V.DC 350, 400V.DC -25 to +105 °C -40 to +105 °C Nominal Cap.Range


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    120Hz RCR-2367 electrolytic capacitor 1500 uf with ESR rating ECES1HG682U C2000H ECES1AG ECES1VG472M PDF

    ECES1VG472M

    Contextual Info: Aluminum Electrolytic Capacitors/ NH Snap-in type Series: NH Discontinued Type: TS • Features Life time : 105°C 2000 h ■Specifications Operating Temp. Range Rated W.V. Range 10 to 100V.DC 160 to 250V.DC 350, 400V.DC -25 to +105 °C -40 to +105 °C Nominal Cap.Range


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    120Hz RCR-2367 ECES1VG472M PDF

    E32-D21

    Abstract: E39-F9 E32-M21 E32-TC200A E32-R21 E32-T16P E32-T84 E32-T11L E32-T12L E32-T22
    Contextual Info: E3X-NH E3X-NH Fiber Units Through-beam Sold in Pairs E32-T11L E32-T12L M2.6 x 1.4 dia. 0.45 3 3.2 7 Two hexagon clamping nuts (T = 2.4) Two toothed washers (for M4) Optical fiber, 2.2 dia. Sensing head (nickelplated brass) M4 x 0.7 1.4 dia. 2.4 dia. 3 11


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    E32-T11L E32-T12L E32-T21L E32-T22L E39-F9) E39-R3) E39-R3 E258-E1-2 0797-1M E32-D21 E39-F9 E32-M21 E32-TC200A E32-R21 E32-T16P E32-T84 E32-T11L E32-T12L E32-T22 PDF

    Contextual Info: FAN5903 Buck Converter with Bypass Mode for 3G / 3.5G / 4G PAs Features • •  Description 2.7 V to 5.5 V Input Voltage Range VOUT Range from 0.4 V to 3.5 V or VIN Small Form Factor Inductor o 2012 470 nH or 540 nH for Minimal PCB Area o 2520 1.0 µH for Higher Efficiency


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    FAN5903 FAN5903 PDF

    SCT595

    Abstract: BGB550 SCT-595 high voltage current mirror
    Contextual Info: NE W BGB550 Medium power broadband amplifier Bias, 3 L ext ~ nH MMIC Features Featuresand andBenefits Benefits C, 4 -mirror mirrorbiased biasedRF RFtransistor transistor internal circuit -collector collectorcurrent currentup uptoto350mA 350mA -low lowoperation


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    BGB550 350mA 100mA IS21I2 --SCT595 SCT595 BGB550 SCT-595 high voltage current mirror PDF

    pulse derating curve

    Abstract: ZTX415
    Contextual Info: Not Recommended for New Design Please Use ZTX415 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads


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    ZTX415 ZTX413 20MHz 10KHz pulse derating curve ZTX415 PDF

    laser LED

    Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor
    Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF


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    ZTX413 20MHz 10KHz laser LED ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor PDF

    Contextual Info: VS-GB90SA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 90 A FEATURES • NPT Gen 5 IGBT technology • Square RBSOA • Positive VCE(on) temperature coefficient • Fully isolated package • Very low internal inductance ( 5 nH typical)


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    VS-GB90SA120U E78996 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


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    foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode PDF

    Contextual Info: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical


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    VS-GP250SA60S E78996 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    GA200SA60SP

    Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical)


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    GA200SA60SP OT-227 18-Jul-08 GA200SA60SP PDF

    GA200SA60SP

    Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical)


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    GA200SA60SP OT-227 12-Mar-07 GA200SA60SP PDF

    DC200 silicone oil

    Abstract: E32-D12 E32-T11R E32-L25A E32-T16P Power AMPLIFIER 6012 UNI F3A buzzer distance sensor E32-T24S E3X-NH11
    Contextual Info: E3X-NH Fine Tuning Fiber Photoelectric Sensor High-precision Sensing with Auto- and Manual-tuning Solves All the Problems of Conventional Models Suitable for high-precision positioning using the fine sensitivity adjustment function. Manual-tuning allows threshold adjustments while


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    E39-R3 E258-E1-3 DC200 silicone oil E32-D12 E32-T11R E32-L25A E32-T16P Power AMPLIFIER 6012 UNI F3A buzzer distance sensor E32-T24S E3X-NH11 PDF

    E3X-NH41

    Abstract: Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L
    Contextual Info: E3X-NH Fine Tuning Fiber Photoelectric Sensor High-precision Sensing with Auto- and Manual-tuning Solves All the Problems of Conventional Models Suitable for high-precision positioning using the fine sensitivity adjustment function. Manual-tuning allows threshold adjustments while


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    91/368/EEC, E258-E1-3 E3X-NH41 Power AMPLIFIER 6012 E32-D11R DC200 silicone oil E32-T24S E3X-NH11 E32-T11L E32-T12L E32-T17L E32-T21L PDF

    L4936N

    Abstract: L4936NH
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N L493s L4936N L4936NH PDF

    FDG314P

    Abstract: SC70-6
    Contextual Info: =M l C O N D U C T O R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P -C h an n el e nh ancem en t mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DM OS technology. This


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    FDG314P FDG314P SC70-6 PDF

    L4936N

    Abstract: L4936NH MULTIWATT11 L4936
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . ADVANCE DAT A STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N L4936N L4936NH MULTIWATT11 L4936 PDF

    L4936N

    Abstract: L4936NH MULTIWATT11
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . ADVANCE DAT A STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N L4936N L4936NH MULTIWATT11 PDF

    L4936N

    Abstract: MULTIWATT11 st automotive L4936NH
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N MULTIWATT11 st automotive L4936NH PDF

    L4936N

    Abstract: L4936 L4936NH MULTIWATT11
    Contextual Info: L4936N/NH DUAL MULTIFUNCTION VOLTAGE REGULATOR . . . . . . . . . . . ADVANCE DATA STANDBY OUTPUT VOLTAGE PRECISION 5V ± 2% OUTPUT 2 TRACKED TO THE STANDBY OUTPUT OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE VERY LOW QUIESCENT CURRENT, LESS THAN 250µA, IN STANDBY MODE


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    L4936N/NH 500mA L4936N L4936N L4936 L4936NH MULTIWATT11 PDF

    DRCF124T

    Contextual Info: DRCF124T Tentative Total pages page DRCF124T Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NH Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


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    DRCF124T DRCF124T PDF

    Contextual Info: 267 Lowell Road, Hudson NH 03051 Tel: 603 598-0070 Fax: (603)598-0075 Helping Customers Innovate, Improve & Grow From: Ram Arvikar VP Quality & Corp. Compliance Subject: Applicability of DFARS 252.225-7014, Preference for Domestic Specialty Metals, Alt. I to Vectron’s products


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    2008-O002) PDF