NF- 4 - A3 Search Results

Leach f470

Abstract: Leach fd470 NICKLE leach relay f470 20/leach relay f470 CEECC16101-019 Tai Shing relay date code marking Tai Shing relay marking Tai Shing date code marking 72 WWU
Contextual Info: SERIES F470 ENGINEERING DATA SHEET RAILWAY RELAY 4 PDT, 1 AMP / 72VDC Polarized, non latching, hermetically sealed relay 4 PDT Contact arrangement Coil supply Direct current Meets the requiements of MIL-R-6106 CEECC16101-019 NF F 62-002-2 FP n°9 PRINCIPLE TECHNICAL CHARACTERISTICS

chn 622

Abstract: SC3622 71V424S15 71V424S10 71v424s12
Contextual Info: 1 dt 3.3V CMOS STATIC RAM 4 MEG 512K x 8-BIT) ADVANCE 'NF° d V4° 4 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

Scans-048

Abstract: A205K ga205 A205D DSAGER0009 frankfurt A205
Contextual Info: a A 205 D,K Vorläufige technische Daten Integrierter 5 W - NF - Verstärker für den Einsetz in Rundfunk-, Fernseh- und Phonogeräten bei Betriebsspannungen von 4 bis 2 0 Volt. Abm essungen in mm und A n schluBbelegung : IBS •05 •015 -oz 3/?a3 KOI* - n n n _ ! = t= i

IS61NF12832

Abstract: IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618
Contextual Info: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI NOVEMBER 2002 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,

Contextual Info: Stewart Connector r/////////// REVISIDN CHANGES BO A S DRAWN 11118 Susquehanna Trail South Glen Rock, PA 1732 7-9 19 9 717 2 3 5 -7 5 1 2 Fax: (717) 2 3 5 -7 9 5 4 PART NO. SS— 650810-A-NF-K3-50-A330 EIGHT CONTACT, EIGHT POSITION; VERTICAL MOUNT KEYED JACK

Contextual Info: T O SH IB A 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm 4 .2 M A X. : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

IS61NF12832

Abstract: IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618
Contextual Info: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION MAY 2002 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,

Contextual Info: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION MAY 2002 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,

Contextual Info: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2001 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,

IS61NF12832

Abstract: IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618
Contextual Info: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION OCTOBER 2000 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,

Contextual Info: IS61NF12832 IS61NF12836 ISSI IS61NF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM PRELIMINARY INFORMATION SEPTEMBER 2000 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed, low-power synchronous static RAMs designed to provide

Contextual Info: IS61NF12832 IS61NF12836 ISSI IS61NF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM PRELIMINARY INFORMATION APRIL 2000 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed, low-power synchronous static RAMs designed to provide

merlin gerin catalogue

Abstract: NC100H C32H-DC merlin gerin C60n C60N merlin catalogue 24171 Merlin Gerin disjoncteur differentiel merlin gerin vigi C60 merlin gerin C60n 24228
Contextual Info: 2 disjoncteurs C60N NF C 61-410 EN 60 898 : 6 000 A CEI 947-2 : 10 kA type largeur cal. pas de (A) 9 mm uni 2 0,5 24493n 1 0,75 1 2 3 4 2 6 10 16 20 25 32 40 50 63 uni + 4 neutre N 1 N 2 réf. courbes C B 24058n ‹ 24059n ‹ 24170 24171 24172 24173 24174

B 4101 RFT

Abstract: 25-207 stassfurt service-mitteilungen RFT Servicemitteilungen 1988 iat sensor Servicemitteilungen Mitteilung VEB RFT "service-mitteilungen" rft lausitz 2011
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT INDU STR IEV ER TR IEB RUNDFUNK UND FERNSEHEN mmm \radio - television | Ausgabe 1988 3 Seite 1 - 4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Colormat 45o6/o7 - Verkürzte Leitung zum Stecker XS 3716 auf dem NF-Modul Aua slcherheitstechniachen Gründen Berührung der Leitung mit

Contextual Info: PARADIGM A D V A N C E D 128K x 9 Bit Synchronous Static RAM with Burst Counter I NF O PSM 44029S P SM 44029L Features Description □ Interfaces directly with the Intel i486 processor 2 5 ,3 3 ,4 0 , and 50 MHz □ High speed access times - Clock to data valid times:

EOB-3 E 24

Abstract: "SLDC"
Contextual Info: " V : if Nf HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jd t) IDT70824S/L Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • • • • • • • • • • • • T h e ID T 7 0 8 2 4 is a high-speed 4K x 16-bit Sequential

Contextual Info: -H YU N D AI > • H Y M 5 3 2 4 1 4 B M - S e r ie s 4MX32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 h F and 0.01 nF

641604

Contextual Info: »«ruH Pfli • H Y M 5 V 6 4 1 6 0 4 K - S e r ie s Unbuffered 16Mx64 bit CMOS DRAM MODULE based on 16Mx4 DRAM, EDO, 4K/8K-Refresh DESCRIPTION The HYM5V641604 is a 16M x 64-brt EDO mode CMOS DRAM module consisting of sixteen 16Mx4 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0 .V F and 0.01 nF

Contextual Info: • H Y U N D A I H Y M 5 3 2 4 1 4 A 4M X M - S e r ie s 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 uFand 0.01 nF decoupling capacitors are mounted

ic stk 032

Abstract: STK-032 STK032 DS13 STK IC STK+4133+II stk03
Contextual Info: lllllll 264 9 a3 »I I rJ ? & » A H-I H<< 5 « ? H H F: ••• •— • nf ! * « :< h ro < •3 1leo >»^ •X3= cn r*t *-4 O B Ó C LO •1•» ro SX g1 1 ♦ , -, K> 8 s »♦ W *r a L ;a r> a » R 2? » * a X • » « 5 n » m r* M * ■* ;? r=

940 629 MOTOROLA 220

Abstract: MAX9984 MAX9984ETP MAX9984ETP-T MAX9986 MAX9993 815MHz T2055-3
Contextual Info: KIT ATION EVALU E L B A IL AVA 19-3648; Rev 0; 4/05 SiGe High-Linearity, 400MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch Features The MAX9984 high-linearity downconversion mixer provides 8.1dB gain, +25dBm IIP3, and 9.3dB NF for 400MHz to 1000MHz base-station receiver applications*. With an optimized 570MHz to 850MHz LO frequency range, this particular mixer is ideal for low-side

Contextual Info: RICOH CORP/ ELECT RON IC 15E D • RP5B02 NF/NE/WF/WE 7744 ^0 0G0072S 4 a«»«*«» -r-n -a -tt The RP5B02 is a 2k bit high speed CMOS static RAM organized 256 words by 8 bits and operates from a single 5V supply. The RP5B02 has CMOS level inputs and outputs, and the outputs are 3-state output type.

pic 16F 738

Abstract: tr/diode gi 08d "TOPS" 1N21C
Contextual Info: P r e l i m i n a r y In f o r m a t i o n PM I PMC-Sierra, Inc. I T# 1^^ ISSUE 3 PM 4 3 1 4 Q D S X QUAD T1 IE 1 LINE INTERFACE DE VICE P M 431 4 QDSX QUAD LI NE T1/E1 INTERFACE Pr el i m i nar y DEVICE I nf or m at i on I s s ue 3: M a r c h , 1996 PMC-Sierra, Inc.

Rv03

Contextual Info: - « Y U N P f t l • H Y M 5 V 6 4 1 6 0 4 F - S e r ie s Unbuffered 16Mx64 bit CMOS ORAM MODULE based on 8Mx8 DRAM, EDO, 4K/8K-Refresh DESCRIPTION The HYM 5V641604 is a 16M x 64-bit EDO mode CM OS DRAM module consisting of sixteen 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1^F and 0.01 nF