NF- 4 - A3 Search Results

Leach f470

Abstract: Leach fd470 NICKLE leach relay f470 20/leach relay f470 CEECC16101-019 Tai Shing relay date code marking Tai Shing relay marking Tai Shing date code marking 72 WWU
Contextual Info: SERIES F470 ENGINEERING DATA SHEET RAILWAY RELAY 4 PDT, 1 AMP / 72VDC Polarized, non latching, hermetically sealed relay 4 PDT Contact arrangement Coil supply Direct current Meets the requiements of MIL-R-6106 CEECC16101-019 NF F 62-002-2 FP n°9 PRINCIPLE TECHNICAL CHARACTERISTICS

chn 622

Abstract: SC3622 71V424S15 71V424S10 71v424s12
Contextual Info: 1 dt 3.3V CMOS STATIC RAM 4 MEG 512K x 8-BIT) ADVANCE 'NF° d V4° 4 Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

Scans-048

Abstract: A205K ga205 A205D DSAGER0009 frankfurt A205
Contextual Info: a A 205 D,K Vorläufige technische Daten Integrierter 5 W - NF - Verstärker für den Einsetz in Rundfunk-, Fernseh- und Phonogeräten bei Betriebsspannungen von 4 bis 2 0 Volt. Abm essungen in mm und A n schluBbelegung : IBS •05 •015 -oz 3/?a3 KOI* - n n n _ ! = t= i

Contextual Info: T O SH IB A 2SK161 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 61 FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS Unit in mm 4 .2 M A X. : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

Contextual Info: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION MAY 2002 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,

Contextual Info: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2001 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,

Contextual Info: IS61NF12832 IS61NF12836 ISSI IS61NF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM PRELIMINARY INFORMATION SEPTEMBER 2000 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed, low-power synchronous static RAMs designed to provide

Contextual Info: IS61NF12832 IS61NF12836 ISSI IS61NF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM PRELIMINARY INFORMATION APRIL 2000 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed, low-power synchronous static RAMs designed to provide

B 4101 RFT

Abstract: 25-207 stassfurt service-mitteilungen RFT Servicemitteilungen 1988 iat sensor Servicemitteilungen Mitteilung VEB RFT "service-mitteilungen" rft lausitz 2011
Contextual Info: SERVICE-MITTEILUNGEN VEB RFT INDU STR IEV ER TR IEB RUNDFUNK UND FERNSEHEN mmm \radio - television | Ausgabe 1988 3 Seite 1 - 4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Colormat 45o6/o7 - Verkürzte Leitung zum Stecker XS 3716 auf dem NF-Modul Aua slcherheitstechniachen Gründen Berührung der Leitung mit

1421ec

Contextual Info: »HYUNDAI HYM572A404A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A404A is a 4M x 72-bit EDO mode CMOS DRAM m odule consisting of eighteen HY51 i6 4 0 4 A in 24 26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pm glass-epoxy printed circuit board. 0.1 uF and 0 01 nF

EOB-3 E 24

Abstract: "SLDC"
Contextual Info: " V : if Nf HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jd t) IDT70824S/L Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • • • • • • • • • • • • T h e ID T 7 0 8 2 4 is a high-speed 4K x 16-bit Sequential

Contextual Info: • H Y U N D A I H Y M 5 3 2 4 1 4 A 4M X M - S e r ie s 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 uFand 0.01 nF decoupling capacitors are mounted

ic stk 032

Abstract: STK-032 STK032 DS13 STK IC STK+4133+II stk03
Contextual Info: lllllll 264 9 a3 »I I rJ ? & » A H-I H<< 5 « ? H H F: ••• •— • nf ! * « :< h ro < •3 1leo >»^ •X3= cn r*t *-4 O B Ó C LO •1•» ro SX g1 1 ♦ , -, K> 8 s »♦ W *r a L ;a r> a » R 2? » * a X • » « 5 n » m r* M * ■* ;? r=

940 629 MOTOROLA 220

Abstract: MAX9984 MAX9984ETP MAX9984ETP-T MAX9986 MAX9993 815MHz T2055-3
Contextual Info: KIT ATION EVALU E L B A IL AVA 19-3648; Rev 0; 4/05 SiGe High-Linearity, 400MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch Features The MAX9984 high-linearity downconversion mixer provides 8.1dB gain, +25dBm IIP3, and 9.3dB NF for 400MHz to 1000MHz base-station receiver applications*. With an optimized 570MHz to 850MHz LO frequency range, this particular mixer is ideal for low-side

Contextual Info: • H Y U N D A I H Y M 5 6 4 1 2 4 A R -S e r ie s Unbuffered 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION Tîie HYM564124A is a 1M x 64-bit EDO mode C M O S DRAM module consisting of four HV5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and

M7375

Abstract: TB315
Contextual Info: S ta n d a rd P ro d u c t PMC-931127 PM I I PMC-Sierra, Inc. T# PM 7375 LASAR-155 ISSUE 4 LOCAL ATM SAR & PHYSICAL LAYER PM7375 L O C A L ATM S E G M E N T A T I O N A N D R E A S S E M B L Y & PHYSI CAL LAYER INTERFACE Pr el i m i na r y I nf orm ation I s s ue 4, S e p t e m b e r ,

Contextual Info: 'HYUNDAI HYM5V64404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION T h e H Y M 5V 64404A is a 4M x 6 4-bit E D O m o d e C M O S DRAM m o d u le co n sistin g of sixteen HY51 V 1 6 4 0 4 A in 24/26 pin SOJ o r TSOP-II and o n e 2048 b it EEPROM on a 168 pin g la ss-e p o xy p rin te d c irc u it b o ard. 0.1 n F and 0.01 nF

a3 sot143

Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Contextual Info: BAR60, BAR61 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3

Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vbs b ^ D S o n Package Ordering Code BUZ 73 AL 200 V 5.5 A 0.6 Q TO-220 AB C67078-S1328-A3 Maximum Ratings Parameter Symbol Continuous drain current

A706 transistor

Abstract: TT 46 N 16 KOF Transistor A1315 TT 330 N 16 KOF tt 60 n 16 kof AMPLIFIER 5W TBA800 TBA641B transistor a781 200 watts audio amp power transistors circuit diagram UA706
Contextual Info: CONSUMER CIRCUIT SELECTION GUIDE BY FUNCTION TV Circuits Function AFT M 3064 Sound IF Amp. Lim. Detector //A3065 Video Amplifier TBA970 Chroma Processing N T S C AiA746, n A 780, M 781, /uA787, M 788 Chroma Processing PA L TAA630S, TBA510, T BA 520, T BA540, T BA 560C, TBA990

struthers-dunn a314xcx48p

Abstract: RR3PA-U-AC120V W250ACPX-14 RR3PA-UL-AC120V RR2P-U-AC120V RR2P-UAC120V A314XCX48P RR2P-U-DC24V A314XBX48PL-24A RR2P-UL-AC120V
Contextual Info: OCTAL STYLE 10 AMP GENERAL PURPOSE RELAY CLASS A314 & 250 FEATURES Plug-in, 8 or 11 pin "Octal Style Base" with see thru plastic dust cover. Standard SPDT, DPDT or 3PDT contact arrangements. Other contact arrangements available on special order. Dielectric Strength to 1500 Vrms.

IEC-55024

Abstract: HF05084R L-1225R L1225 ADBS-A320 1000cp lexan 21051 lexan 121 21051 2405 lexan A320
Contextual Info: ADBS-A320 Optical Finger Navigation Data Sheet Description Features The ADBS-A320 sensor is a small form factor SFF LED illuminated optical finger navigation system. x Low power architecture The ADBS-A320 is a low-power optical finger navigation sensor. It has a new, low-power architecture and automatic

IA3222B-F-FT

Abstract: TBR-21 1000 fba hybrid analog fxo IC port IA3223 IA3222B IA3222 C0603X7R160104MNP induction balance metal detector CR1206-8W-472JT
Contextual Info: I A3222/23 IA3222/23 DAA C HIPSET W I T H A N A L O G I NTERFACE Features      Programmable worldwide telecom compliance with one hardware build V.92 56 kb/s performance Virtually unlimited high-voltage isolation Highly-competitive BOM cost

bd 139 smd

Abstract: CHA-3688 CHA3688AQDG CHA3688a-QDG AN0017 MO-220
Contextual Info: CHA3688aQDG RoHS COMPLIANT 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. UMS A3667A A3688A YYWWG The circuit is manufactured with a standard