NF TRANSISTOR Search Results

Halbleiterbauelemente DDR

Abstract: elektronik DDR Leistungsdiode Halbleiter-Bauelemente DDR Hallgenerator CSSR silizium diode
Contextual Info: Tunneldiode HF-Transistor Diode Kapazitätsdiode NF-Transistor NF-Leistungstransistor Ptot >1W Bauelement 2.Element Hall-Feldsonde CSSR: Silizium Hall-Generator CSSR: Galliumarsenidphosphid HF-Leistungstransistor Hall-Generator DDR: MIS-Transistor strahlungsempfindliches

Contextual Info: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF High fT = 5GHz NF = 1.5dB, |S218|: = 16dB <f = 500MHz NF = 1.7dB, |S21e|' = 10.5dB 1= 1000MHz) ABSOLUTE MAXIMUM RATINGS Characteristics Collector Base Voltage Collector Emitter Voltage

2SC2753

Contextual Info: TOSHIBA 2SC2753 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2753 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION. 5.1 M AX. , • . Low Noise Figure, High Gain NF = 1.5dB, |S2lel2= 16dB f = 500MHz NF = 1.7dB, |S2lel2= 10.5dB (f = 1GHz)

transistor Bc 540

Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt

IC 431

Abstract: 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22
Contextual Info: 2SC5277A Ordering number : ENA1075 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).

2SC5490

Abstract: ENN6289 TA 8644
Contextual Info: Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).

Contextual Info: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

2N929

Abstract: 2N930 929-2N
Contextual Info: 2 N 929 • 2 N 930 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharme NF-Verstärker Applications: Low noise AF am plifiers Besondere Merkmale: Features: • Besonders rauscharm bei kleinen Kollektorström en

2SC2753

Contextual Info: TOSHIBA 2SC2753 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2753 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION. 5.1 MAX. , • . Low Noise Figure, High Gain NF = 1.5dB, |S2lel2 = 16dB f = 500MHz NF = 1.7dB, |S2lel2 = 10.5dB (f = 1GHz)

ce 2826 ic

Abstract: IC 4305 2SC5504 TA1703
Contextual Info: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1GHz).

TA1703

Abstract: ce 2826 ic TA17-03 2SC5504 IC163 TA-1703 2SC550
Contextual Info: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1GHz).

Contextual Info: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain

A1074

Abstract: IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990
Contextual Info: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain

Contextual Info: Ordering number:ENN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).

2SC5276

Abstract: ITR08032 ITR08033 ITR08034 ITR08035 ITR08036
Contextual Info: Ordering number:ENN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1.5GHz).

transistor a1275

Abstract: a1275 transistor IC A1302
Contextual Info: Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).

marking 624 sc-70

Abstract: transistor 3213
Contextual Info: 2SC5245A Ordering number : ENA1074A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain

transistor

Abstract: rf npn power transistor c 10-12 ghz 2SC2954 RF NPN POWER TRANSISTOR 3 GHZ current buffer ic 30mA high gain low capacitance NPN transistor high gain low voltage NPN transistor S21E-2 NPN RF Amplifier RF POWER TRANSISTOR NPN
Contextual Info: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION •Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz APPLICATIONS

Contextual Info: Ordering number:ENN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1.5GHz).

GH MARKING

Contextual Info: Ordering number:ENN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).

transistor nec 8772

Abstract: transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
Contextual Info: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz • HIGH MAXIMUM STABLE GAIN:

2SC309

Abstract: 2SC3098 uPI Semiconductor
Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3098 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + a5 2.5 —0.3 • Low Noise Figure. . NF = 2.5dB, |S2lel2 —14.5dB f = 500MHz . NF = 3.0dB, |S2iel2 —9.0dB (f = 1GHz)

vogt

Abstract: bridge rectifier 1N4007 VOGT 3 mH Y2-CAPACITOR vogt u2 bridge rectifier 1N4007 48 Transistor NF 47 VOGT r6 vogt r4 EVD25
Contextual Info: STEVAL-ILB004V1 Bill of materials BOM Item Qty Reference Part / value Voltage Watt Type 275 Vac EPCOS - order code B32922C3224K 1 1 C1 220 nF 2 1 C10, C14 10 F 3 1 C11 47 µF 35 V Electrolytic 4 2 C12, C13 100 nF 50V Ceramic 5 2 C16 10 nF 1600 V EPCOS - order code B32653A1103J

nec 2501 Le 629

Abstract: 3771 nec nec d 1590
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.