NF TRANSISTOR Search Results

transistor SD335

Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Contextual Info: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen

uPA63

Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening

Halbleiterbauelemente DDR

Abstract: elektronik DDR Leistungsdiode Halbleiter-Bauelemente DDR Hallgenerator CSSR silizium diode
Contextual Info: Tunneldiode HF-Transistor Diode Kapazitätsdiode NF-Transistor NF-Leistungstransistor Ptot >1W Bauelement 2.Element Hall-Feldsonde CSSR: Silizium Hall-Generator CSSR: Galliumarsenidphosphid HF-Leistungstransistor Hall-Generator DDR: MIS-Transistor strahlungsempfindliches

Contextual Info: KSC2753 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER FOR VHF/UHF High fT = 5GHz NF = 1.5dB, |S218|: = 16dB <f = 500MHz NF = 1.7dB, |S21e|' = 10.5dB 1= 1000MHz) ABSOLUTE MAXIMUM RATINGS Characteristics Collector Base Voltage Collector Emitter Voltage

DC 0509

Abstract: 2SC3268
Contextual Info: TOSHIBA_ TOSHIBA TRANSISTOR 2SC3268 SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. 1.6 MAX. 4.6 MAX. NF=1.7dB, |S2ie l2= 15.0dB f=500MHz NF = 2dB, |S2iç|2= 9.5dB(f=1000MHz)

2SC2753

Contextual Info: TOSHIBA 2SC2753 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2753 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION. 5.1 M AX. , • . Low Noise Figure, High Gain NF = 1.5dB, |S2lel2= 16dB f = 500MHz NF = 1.7dB, |S2lel2= 10.5dB (f = 1GHz)

transistor Bc 540

Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt

IC 431

Abstract: 2SC5277A SANYO DC 303 ITR08213 ITR08215 ITR08216 ITR08217 120d-22
Contextual Info: 2SC5277A Ordering number : ENA1075 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).

2SC5490

Abstract: ENN6289 TA 8644
Contextual Info: Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).

Contextual Info: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

2N929

Abstract: 2N930 929-2N
Contextual Info: 2 N 929 • 2 N 930 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharme NF-Verstärker Applications: Low noise AF am plifiers Besondere Merkmale: Features: • Besonders rauscharm bei kleinen Kollektorström en

2SC2753

Contextual Info: TOSHIBA 2SC2753 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2753 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION. 5.1 MAX. , • . Low Noise Figure, High Gain NF = 1.5dB, |S2lel2 = 16dB f = 500MHz NF = 1.7dB, |S2lel2 = 10.5dB (f = 1GHz)

a1091 transistor

Abstract: transistor a1091 a1091* transistor A1091 2SC5490A
Contextual Info: 2SC5490A Ordering number : ENA1091 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5490A UHF to S-Band Low-Noise Amplifier Applications Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).

Contextual Info: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

ce 2826 ic

Abstract: IC 4305 2SC5504 TA1703
Contextual Info: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1GHz).

TA1703

Abstract: ce 2826 ic TA17-03 2SC5504 IC163 TA-1703 2SC550
Contextual Info: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1GHz).

Contextual Info: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain

A1074

Abstract: IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990
Contextual Info: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain

Contextual Info: Ordering number:ENN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).

2SC3268

Contextual Info: 2SC3268 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 VHF~UHF Band Low Noise Amplifier Applications • NF = 1.7dB, |S21e|2 = 15.0dB f = 500 MHz · NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SC5245A Ordering number : ENA1074A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain

2SC5245

Abstract: ITR07984 ITR07985 ITR07986 ITR07987 51841 IC163 sanyo 1042
Contextual Info: Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).

2SC5276

Abstract: ITR08032 ITR08033 ITR08034 ITR08035 ITR08036
Contextual Info: Ordering number:ENN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1.5GHz).

transistor zo 607

Abstract: ZO 607 MA 2SC5275 ITR08019 ITR08020 ITR08021 ITR08022 ZO 607 MA 135 transistor 51854
Contextual Info: Ordering number:ENN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).