NF MARKING TRANSISTOR Search Results

MARKING SY SOT23

Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

Contextual Info: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF = 1.5dB typ. (@f=1GHz) • High Gain: |S21e| = 10.5dB (typ.) (@f=1GHz) 2 Marking

16 SOT-143 MOTOROLA

Contextual Info: SOT-143 Devices Maximum die size 25 mil x 25 mil CASE318A-05 RF Transistors Maximum Ratings Galn-Bandwidth NF @ <§ Device MRFS211LT1 <17> MRF9331LT1 MRF9011LT1 MRF9411LT1 MRF9411BLT1 MRF9511LT1 MRF0211LT1 MRF5711LT1 f Gain @ f Marking h Typ GHz •c mA Typ

MMBT6428

Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
Contextual Info: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

Contextual Info: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES *High transition frequency. *Small rbb’•Cc and high gain. *Small NF. 2 MARKING 1 3 AD SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER

MT3S46T

Contextual Info: MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.2dB @f=2GHz · High Gain:|S21e| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM

MT4S101T

Contextual Info: MT4S101T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.8dB @f=2GHz • High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking

Contextual Info: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES *High transition frequency. *Small rbb’•Cc and high gain. *Small NF. 2 MARKING 1 3 AD SOT-23 1: EMITTER 2: BASE 3: COLLECTOR *Pb-free plating product number: 2SC3838L

Contextual Info: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking PW-Mini

MT4S100T

Contextual Info: MT4S100T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.72dB @f=2GHz • High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking

Contextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB typ. (@f=1GHz) • High Gain: |S21e| =11dB (typ.) (@f=1GHz) 2 Marking M U

Contextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking PW-Mini

marking AD

Contextual Info: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES *High transition frequency. *Small rbb’•Cc and high gain. *Small NF. 2 1 MARKING 3 AD SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER

Contextual Info: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking

N-Channel JFET FETs

Abstract: P-Channel RF Amplifier jfets MMBF5457LT1 MMBF5484LT1
Contextual Info: SOT-23 TRANSISTORS continued Unipolar (Field Effect) Transistors (JFETs) RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1-Drain, 2-Source, 3-Gate NF Device Y»s @ V ds Marking dB Typ

MT3S20P

Contextual Info: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini

mt3s111

Contextual Info: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz) Marking

2SA1162

Abstract: 2SC2712
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

MT3S22P

Contextual Info: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini

MT3S150P

Abstract: TOSHIBA MICROWAVE AMPLIFIER
Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1GHz • High Gain: |S21e| =11.5dB (@f=1GHz) 2 Marking Ｍ Ｐ Maximum Ratings (Ta = 25°C)

Contextual Info: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: |S21e|2=11.5dB (@f=1 GHz) Marking Ｍ Ｐ Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MT3S21P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S21P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low-Noise Figure: NF=1.55 dB typ. (@f=1 GHz) • High Gain: |S21e|2=11 dB (typ.) (@f=1 GHz) Marking T 2 PW-Mini

MT3S36T

Contextual Info: MT3S36T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S36T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.3dB @f=2GHz · High Gain:|S21e| =12.5dB (@f=2GHz) 2 Marking 3 Q3 1 2 TESM Maximum Ratings (Ta = 25°C)