NF 842 Search Results

8439

Abstract: BPV10NF
Contextual Info: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and

Contextual Info: Mini-Circuits - Specification for Amplifier - ZQL-900MLN Amplifier print this page ZQL-900MLN Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 824-849 26 ±0.50 +24.50

BPV10NF

Contextual Info: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and

CW68

Contextual Info: Mini-Circuits - Specification for Amplifier - ZQL-900MLNW Amplifier print this page ZQL-900MLNW Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 800-900 22 ±2.20 +23.00

ne71084

Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
Contextual Info: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package

BPV22NF

Contextual Info: TELEFUNKEN Semiconductors BPV 22 NF Silicon PIN Photodiode Description BPV22NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on

BPV23NF

Contextual Info: TELEFUNKEN Semiconductors BPV 23 NF Silicon PIN Photodiode Description BPV23NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on

MOS marking 843

Contextual Info: SILICON MONOLITHIC MOS TYPE LINEAR INTEGRATED CIRCUIT TA4007F TV TUNER VHF RF AMPLIFIER APPLICATIONS. FM TUNER RF AMPLIFIER APPLICATIONS. FEATURES • On account o f this Dlevice b u ilt in Bias Circuit, Cut d o w n num ber o f articles. NF = 1.3dB Typ.

BPV23NF

Abstract: 950nm
Contextual Info: TELEFUNKEN Semiconductors BPV 23 NF Silicon PIN Photodiode Description BPV23NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs

BPV22NF

Contextual Info: TELEFUNKEN Semiconductors BPV 22 NF Silicon PIN Photodiode Description BPV22NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs on GaAs and GaAlAs on GaAlAs

2N6617

Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
Contextual Info: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB

balun transformer 75 ohm 1000MHz

Abstract: 50W linear power amplifier 4000MHz ADTL2-18 1ghz amp n50 schematic diagram vga 15-pin IC 2032A ETC1-1-13 cd542
Contextual Info: LTC6430-15 High Linearity Differential RF/IF Amplifier/ADC Driver Description Features 50.0dBm OIP3 at 240MHz into a 100Ω Diff Load n NF = 3.0dB at 240MHz n 20MHz to 2000MHz Bandwidth n 15.2dB Gain n A-Grade 100% OIP3 Tested at 240MHz n 1.0nV/√Hz Total Input Noise

TRANSISTOR nf 842

Abstract: D 843 Transistor transistor su 312
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ±0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 ± 0.1 HIGH GAIN:

02S11

Abstract: max 7176
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz 15 Noise Figure, NF dB

Contextual Info: plerowTM APM0843-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 35.06 dB @ 840 MHz = 34.94 dB @ 845 MHz · NF of 6.5 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er amplifier mini-module for such application band in

NEC 3536

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •

Contextual Info: — SPD 08N05L I nf i ne on technologies im p f° v e d SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage VDS 55 • Enhancement mode Drain-Source on-state resistance ^DS on 0.1 Q • Avalanche rated Continuous drain current

transistor M 839

Abstract: Y 521 R 937
Contextual Info: 2SC5218 Silicon NPN Epitaxial HITACHI ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fx = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK • 2

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

hj 4049

Abstract: NE321000 Alpha Wire 912 Nec 9002 S1142
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz VDS = 2 V f = 12 GHz Noise Figure, NF dB • HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz • GATE LENGTH: ≤0.2 µm

TRANSISTOR nf 842

Abstract: TRANSISTOR c 5578 B TRANSISTOR c 5578 TRANSISTOR 5578 TRANSISTOR 534
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz HIGH GAIN: IS2 1 EI2 = 9.0 dB TYP at 1 GHz

LB 1639

Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA