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    NF 747 Search Results

    NF 747 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF


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    f-67441 PDF

    fujitsu gaas fet

    Abstract: fujitsu GHz gaas fet
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


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    fsu02lgfcsi0598m200fujitsu gaas fetfujitsu ghz gaas fet PDF

    FSU02LG

    Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


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    fsu02lgdissipa4888eudyna devicesfujitsu rf 053+1dc bias of gaas fet PDF

    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


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    fsu02lgeud49 PDF

    1084 fet

    Abstract: fujitsu gaas fet fujitsu GHz gaas fet
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


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    fsu02lgfcsi0598m2001084 fetfujitsu gaas fet+1fujitsu ghz gaas fet PDF

    5503 FET

    Abstract: 5503 GM FSU02LG FSU02
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


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    fsu02lg5503 fet5503 gmfsu02 PDF

    FSU02LG

    Abstract: v 4836 fujitsu GHz gaas fet
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


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    fsu02lgfcsi0598m200v 4836fujitsu ghz gaas fet PDF

    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


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    fsu02lg PDF

    2N6617

    Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
    Contextual Info: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions


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    2n66170hxtr-6101hxtr-61022n6617+6hpac-70gtmil-s-19500mil-std-750/883hxtr61022n6617 s parameterstransistor hxtr-6101 PDF

    Contextual Info: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    o-220c67078-s1451-a2s35bq5q133777+5sqt-89b535bq5d13377b235bg5d13377t PDF

    NEC 3536

    Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •


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    ne76118ne76118-t1ne76118-t2nec 3536 PDF

    fujitsu gaas fet

    Abstract: FSU02LG FUJITSU RF 053
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • • • • • • High Output Power: P ^ b = 23.0dBm Typ. @2GHz High Associated Gain: G ^ b = 17.0dB (Typ.)@2GHz Low Noise Figure: NF=1,5dB (Typ.)@ f=2G Hz Low Bias Conditions: VQg=3V, 20mA Cost Effective Hermetic Microstrip Package


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    fsu02lgfcsi0598m200fujitsu gaas fetfujitsu rf 053 PDF

    2SK211

    Abstract: 2SK211Y 2SK211GR 2L2 marking
    Contextual Info: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS. + 0.5 2 .5 - 0 .3 + 0.2 5 1 .5 - Q l 5 VHF BAND AM PLIFIER APPLICATIONS. Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)


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    2sk211100mhzsc-592sk211y+22sk211gr2l2 marking PDF

    063 793

    Abstract: transistor v63
    Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain


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    ne34018ws60-00-1ir30-00-3063 793+1transistor v63 PDF

    NEC K 2500

    Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
    Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz


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    ne34018ne34018-t1ne34018-t2nec k 2500+6ols 0491689ids 4069k 3531 transistor6323 ganec 2905 PDF

    817 CN

    Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz


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    ne76118e76118ne76118-t1ne76118-t2er+2ir30-00-2817 cn PDF

    NE76084

    Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE


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    ne76084ghz21ls211ne76084s+2ne76084-t100b5511 PDF

    Hewlett-Packard application note 967

    Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
    Contextual Info: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions


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    2n66170hxtr-6101hxtr-61022n6617+9hpac-70gtmil-s-19500mil-std-750/883hewlett-packard application note 967equivalent of transistor d 2331hewlett packard application note 9722n6617 s parameterstransistor noise figure measurements applicationghz transistor PDF

    metal film fused resistor 47

    Abstract: 25CC EL2045C EL2045CN EL2045CS QCX0002 000H4
    Contextual Info: HIGH perfo rm a n ce ana & s ìn tegsateo cmcufTS EL2045C Low-Power 100 MHz Gain-nf-2 Stable Operational A m plifier F e a tu r e s G e n e ra l D escrip tio n • 100 M Hz gain-bandwidth product • Gain-of-2 stable T he E L 2045C is a high speed, low power, low cost monolithic


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    el2045c150ft1000ft500ft+6metal film fused resistor 4725ccel2045cnel2045csqcx0002000h4 PDF

    HT 1000-4 power amplifier

    Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v
    Contextual Info: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22|xF 4 k il 1 nF 1 0 0 jlF * V OUT V|N C - Q1 -O h anyCAP LDO TOPOLOGY - | - C COMP N O N IN V E R T IN G W ID E B A N D


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    adp3050-5adp3603/4/5admc300admc330+11admc331ht 1000-4 power amplifiermip 836 icmip 836schematic weigh scale ad7730circuit integrate tb 1226 cnwheelchair motor 24vschematic ad77301000 watt rms professional audio power amplifier schematic circuitad7730 pcb circuit exampleelectric bicycle dc motor control 36v PDF

    Contextual Info: F-206-1 2 mm ESS nf PTT, PTF SERIES SPECIFICATIONS ROW OPTION For co m p le te specifications se e w w w .sam tec.com ?P T T o r w w w .sam tec.com ?P TF In s u la to r M a te ria l: B lack Liquid C rystal t o Polym er C o n ta c t M a te ria l: P ho sp ho r Bronze


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    f-206-1689cg37852-26904858-fax747-fax PDF

    747d

    Abstract: 747D812M035AA2A
    Contextual Info: 747D Series Ⅲ Large Can Ⅲ Screw Terminal Ⅲ High Frequency Applications Ⅲ Low Impedance Ⅲ ‫؁‬55؇C to ‫؀‬105؇C Temperature Range Actual Size The 747D series offers a low impedance over an extended temperature range of ‫؁‬55؇C to ‫؀‬105؇C.


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    35vdcnomina47d333m025ac2a747d383m025ad2a747d443m025ae2a+8747d493m025af2a747d293m025ba2a747d353m025bm2a747d463m025bb2a747d583m025bl2a747d703m025bc2a747d747d812m035aa2a PDF

    747d

    Abstract: 747D443M035BC2A 747D134M016BD2A 747D812M035AA2A uA747 United Chemi-Con catalogue 747D103 747D123M025AA2A 747D103M025AY2A AD #0953
    Contextual Info: 747D Series Ⅲ Large Can Ⅲ Screw Terminal Ⅲ High Frequency Applications Ⅲ Low Impedance Ⅲ ‫؁‬55؇C to ‫؀‬105؇C Temperature Range Actual Size The 747D series offers a low impedance over an extended temperature range of ‫؁‬55؇C to ‫؀‬105؇C.


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    -105c747d747d443m035bc2a747d134m016bd2a+7747d812m035aa2aua747united chemi-con catalogue747d103747d123m025aa2a747d103m025ay2aad #0953 PDF

    Contextual Info: Metallized Polypropylene Film Capacitors MFP in Plastic Case MFP pulse capacitors w ith highest possible contact reliability B 32 682 . B 32 686 ; t Construction • • • • Dielectric: polypropylene Film m etallized on one side and metal foils internally connected in series


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    rms500fl235b05fl535boci074r00 PDF