NF 747 Search Results
NF 747 Datasheets Context Search
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Contextual Info: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF |
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f-67441 | |
fujitsu gaas fet
Abstract: fujitsu GHz gaas fet
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fsu02lgfcsi0598m200fujitsu gaas fetfujitsu ghz gaas fet | |
FSU02LG
Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
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fsu02lgdissipa4888eudyna devicesfujitsu rf 053+1 | |
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Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package |
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fsu02lgeud49 | |
1084 fet
Abstract: fujitsu gaas fet fujitsu GHz gaas fet
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fsu02lgfcsi0598m2001084 fetfujitsu gaas fet+1 | |
5503 FET
Abstract: 5503 GM FSU02LG FSU02
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fsu02lg5503 fet5503 gmfsu02 | |
FSU02LG
Abstract: v 4836 fujitsu GHz gaas fet
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fsu02lgfcsi0598m200v 4836fujitsu ghz gaas fet | |
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Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package |
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fsu02lg | |
2N6617
Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
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2n66170hxtr-6101hxtr-61022n6617+6 | |
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Contextual Info: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current |
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o-220c67078-s1451-a2s35bq5q133777+5 | |
NEC 3536Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz • |
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ne76118ne76118-t1ne76118-t2nec 3536 | |
fujitsu gaas fet
Abstract: FSU02LG FUJITSU RF 053
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fsu02lgfcsi0598m200fujitsu gaas fetfujitsu rf 053 | |
2SK211
Abstract: 2SK211Y 2SK211GR 2L2 marking
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2sk211100mhzsc-592sk211y+2 | |
063 793
Abstract: transistor v63
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ne34018ws60-00-1ir30-00-3063 793+1 | |
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NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
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ne34018ne34018-t1ne34018-t2nec k 2500+6 | |
817 CNContextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz |
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ne76118e76118ne76118-t1ne76118-t2er+2 | |
NE76084Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE |
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ne76084ghz21ls211ne76084s+2 | |
Hewlett-Packard application note 967
Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
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2n66170hxtr-6101hxtr-61022n6617+9 | |
metal film fused resistor 47
Abstract: 25CC EL2045C EL2045CN EL2045CS QCX0002 000H4
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el2045c150ft1000ft500ft+6 | |
HT 1000-4 power amplifier
Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v
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adp3050-5adp3603/4/5admc300admc330+11 | |
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Contextual Info: F-206-1 2 mm ESS nf PTT, PTF SERIES SPECIFICATIONS ROW OPTION For co m p le te specifications se e w w w .sam tec.com ?P T T o r w w w .sam tec.com ?P TF In s u la to r M a te ria l: B lack Liquid C rystal t o Polym er C o n ta c t M a te ria l: P ho sp ho r Bronze |
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f-206-1689cg37852-26904858-fax747-fax | |
747d
Abstract: 747D812M035AA2A
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35vdcnomina47d333m025ac2a747d383m025ad2a747d443m025ae2a+8 | |
747d
Abstract: 747D443M035BC2A 747D134M016BD2A 747D812M035AA2A uA747 United Chemi-Con catalogue 747D103 747D123M025AA2A 747D103M025AY2A AD #0953
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-105c747d747d443m035bc2a747d134m016bd2a+7 | |
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Contextual Info: Metallized Polypropylene Film Capacitors MFP in Plastic Case MFP pulse capacitors w ith highest possible contact reliability B 32 682 . B 32 686 ; t Construction • • • • Dielectric: polypropylene Film m etallized on one side and metal foils internally connected in series |
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rms500fl235b05fl535boci074r00 | |