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    FSU02LG Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FSU02LG
    		Eudyna Devices General Purpose GaAs FET Original PDF 103.3KB 4
    FSU02LG-E1
    		Fujitsu FET: P Channel: ID 0.15 A Original PDF 97.53KB 4

    FSU02LG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fujitsu gaas fet

    Abstract: fujitsu GHz gaas fet
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		fsu02lgfcsi0598m200fujitsu gaas fetfujitsu ghz gaas fet PDF

    FSU02LG

    Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		fsu02lgdissipa4888eudyna devicesfujitsu rf 053+1dc bias of gaas fet PDF

    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		fsu02lgeud49 PDF

    1084 fet

    Abstract: fujitsu gaas fet fujitsu GHz gaas fet
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		fsu02lgfcsi0598m2001084 fetfujitsu gaas fet+1fujitsu ghz gaas fet PDF

    5503 FET

    Abstract: 5503 GM FSU02LG FSU02
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		fsu02lg5503 fet5503 gmfsu02 PDF

    FSU02LG

    Abstract: v 4836 fujitsu GHz gaas fet
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		fsu02lgfcsi0598m200v 4836fujitsu ghz gaas fet PDF

    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		fsu02lg PDF

    fujitsu gaas fet

    Abstract: FSU02LG FUJITSU RF 053
    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • • • • • • High Output Power: P ^ b = 23.0dBm Typ. @2GHz High Associated Gain: G ^ b = 17.0dB (Typ.)@2GHz Low Noise Figure: NF=1,5dB (Typ.)@ f=2G Hz Low Bias Conditions: VQg=3V, 20mA Cost Effective Hermetic Microstrip Package


    OCR Scan     		fsu02lgfcsi0598m200fujitsu gaas fetfujitsu rf 053 PDF