NF 736 Search Results

QUADRAX CONNECTOR

Abstract: QUADRAX ts 083
Contextual Info: Environmental Connectors 257-459 Plug and Wall Mount Quadrax Connector MIL-DTL-38999 Series III Type Basic Number Shell Size 09 21 23 25 Finish M - Electroless Nickel NF - O.D. Cadmium over Nickel 257 - 459 NF Contact Style P - Pin insert less contacts *

Glenair quadrax

Contextual Info: Twinax and Quadrax Connectors 257-459 06 or (S7) Plug or Wall Mount Receptacle Quadrax Connector MIL-DTL-38999 Series III Type Basic Number Shell Size 09 21 23 25 Finish M - Electroless Nickel NF - O.D. Cadmium over Nickel 257 - 459 NF Insert Arrangement

Twinax and Quadrax Connectors

Abstract: 257-459 (06) or (S7)
Contextual Info: Twinax and Quadrax Connectors 257-459 06 or (S7) Plug or Wall Mount Receptacle Quadrax Connector MIL-DTL-38999 Series III Type Basic Number Shell Size 09 21 23 25 Finish M - Electroless Nickel NF - O.D. Cadmium over Nickel 257 - 459 NF Insert Arrangement

HYM5328104B

Abstract: HYM532814B HYM532810 HYM532814
Contextual Info: •HYUNDAI HYM532814B M-Series 8M x 32-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT D ESCRIPTION The HYM5328104B is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF decoupling capacitors are

Thomson-CSF capacitors

Abstract: Thomson-CSF POLYESTER capacitors Thomson-CSF passive components Thomson-CSF film capacitors
Contextual Info: THOMD004 FILM CHIP CAPACITORS CF serie Description : Film chip capacitor, using a mold-less construction and stacked metallized Polyester with high melting point. General Characteristics Capacitance range E6 serie 1 nF to 4.7 fxF Tolerance on capacitance

M85045

Abstract: mil-i-23053 mil-i-23053/5 bandit 600-052 sleeving 4203L MIL-I-2305
Contextual Info: Backshells and Accessories 189-015 Environmental Banding Backshell for Multichannel M85045 Shipboard Fiber Optic Cable for Use with MIL-PRF-28876 or Glenair 180-040 Connectors 189-015 NF 13 05-3 B Product Series Band 600-052 Supplied Omit if not required

M85045

Abstract: MIL-I-2305 mil-i-23053/5 torlon 1000-Natural mil-i-23053 600-052 M85045/M85045
Contextual Info: MIL-PRF28876 189-015 Environmental Banding Backshell for Multichannel M85045 Shipboard Fiber Optic Cable for Use with MIL-PRF-28876 or Glenair 180-040 Connectors Finish Table II Product Series 189 - 015 Basic Part Number C NF Dash Number (Table III) 13 05 - 3

Motorola 1N4007

Abstract: motorola MRF6 mrf6 transistor 228 npn motorola
Contextual Info: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Pow er TVansistor C1, C2, C5, C6 C9 D1, C3 C7 C8 D2 100 pF, Chip Capacitor, Hight Q 330 pF, Chip Capacitor, 0805 10 nF, Chip Capacitor, 0805

R-141082

Contextual Info: SAFETY COAXIAL CONNECTORS SA FETY BNC : all accessible parts are made of insulated materials 100% intermateable with STANDARD BNC. Standards Characteristics : IEC 348 class II, VDE 411 and NFC 20 010 tests CECC 22120 / IEC 169.8 / MIL-C-39012 / BS9210 / IEEE 802-3 / NF-UTE 93564

ATF-35176

Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
Contextual Info: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

NEC 3536

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •

FDS 4800

Abstract: smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 BUZ111SL TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457
Contextual Info: BUZ 111SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f l DS on 0.007 n A 80 t> Continuous drain current • Avalanche rated 55 V • Logic Level

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

Contextual Info: NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET l>,co^ uu FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Voss 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: G a = 11.0 dB typical at f = 12 GHz m •

NE32400

Abstract: NE32400M NE32400N
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip

HE901-HE902

Abstract: HE901 HE902
Contextual Info: Serie 254 double face - Pas 2,54mm Norme NF C/UTE 93-423 - Modele HE901 DESCRIPTION DES PROLONGATEURS Les prolongateurs femelles sont enfichables ou encartables. -enfichables, iIs sont accouples avec, les connecteurs males decrits pages 13 a 16. - encartables, la carte imprimee de 1,6 ± 0,2 mm d'epaisseur est inseree directement.

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES_ . VERY LOW NOISE FIGURE: NF = 0 .6 dB typical at f = 12 G H z • HIGH ASSOCIATED GAIN: G a = 1 1 .0 dB typical at f = 12 G H z

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 GHz m • LG = 0.25 urn, Wg = 200 |im

ne324

Abstract: NE32400
Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim

Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED FEATURES NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , I d s = 1 0 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: m ;o < G a = 11.0 dB typical at f = 12 GHz