111SL Search Results

FDS 4800

Abstract: smd transistor 9f8 smd marking 9T smd diode code 9T smd transistor H7 BUZ111SL TRANSISTOR SMD MARKING CODE BS s SMD TRANSISTOR MARKING 45B BUZ111 D133457
Contextual Info: BUZ 111SL I nf ineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f l DS on 0.007 n A 80 t> Continuous drain current • Avalanche rated 55 V • Logic Level

111SL

Abstract: BUZ111SL smd JH transistor BUZ111SL Application Notes E3045 BUZ111SLE3045A
Contextual Info: BUZ 111SL SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.007 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 80 A • Logic Level • dv/dt rated

111TCA

Contextual Info: ATC Millimeter Wavelength Single Layer Capacitors Ultra-High Qs Low Cost DC to 50 GHz Broadband Applications .06 pF to 4700 pF Not Static Sensitive Capacitor Arrays High Reliability Testing Custom sizes, values, shapes, tolerances and higher voltages ATC 111 SERIES MICROCAP• capacitors have beveled edges to minimize

B120K

Abstract: F220M J560M NCSL Z540-1-1994 7B100T 111shc MIL-C-49464
Contextual Info: ATC Millimeter Wavelength Single Layer Capacitors • Ultra-High Qs • Low Cost • DC to 50 GHz • Broadband Applications • .06 pF to 4700 pF • Not Static Sensitive • Capacitor Arrays • High Reliability Testing • Custom sizes, values, shapes,

Contextual Info: 24A M ic r o c h ip 1KI2K A 1.8V CMOS Serial EEPROMs 0 1 /0 2 FEATURES DESCRIPTION • Single supply with operation down to 1,8V • Low power CMOS technology — 1m A active current typical — 10 iA standby current typical at 5.5V — 3 nA standby current typical at 1.8V

TT 2142

Abstract: 111XA1R0B100TT CAPACITOR Titanium 111sg470m100tt 111SCA0R5B100TT 111XG471M100TT 111SCA0R7B100TT 111SDB2R0D100TT 111UF101M100TT 111UEC330K100TT
Contextual Info: ATC Millimeter Wavelength Single Layer Capacitors • Ultra-High Qs • Low Cost • DC to 50 GHz • Broadband Applications • .06 pF to 4700 pF • Not Static Sensitive • Capacitor Arrays • High Reliability Testing • Custom sizes, values, shapes,

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

AD770

Abstract: AD7703
Contextual Info: ANALOG DEVICES LC zM0S 20-Bit A/D Converter □ AD 7703 FUNCTIONAL BLOCK DIAGRAM AV ss O V ss SC1 SC2 FEA TU R ES M o n o lith ic 2 0 -B it ADC 0 .0 0 0 3 % L in e a rity Error 2 0 -B it N o M is s e d C odes O n -C h ip S e lf-C a lib ra tio n C irc u itry

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

Contextual Info: L D I E L E C T R I C : 111 Series SLCs Series / Case Size L & W Cap Cap (pF) Code 118 A .010 (.254) nom. 39 to 51 pF Tol. M 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 300 330 360 390 430 470 510 118AL390*100TT 118AL430*100TT

RIO 1R0

Abstract: 111UF RIO 1R1 RIO+1R5
Contextual Info: ATC Millimeter Wavelength Single Layer Capacitors • Ultra-High Qs • Low Cost • DC to 50 GHz • Broadband Applications • .06 pF to 4700 pF • Not Static Sensitive • Capacitor Arrays • High Reliability Testing • Custom sizes, values, shapes,