NE38018 Search Results

8029 l2

Abstract: NE38018 V68 QB 2104 TRANSISTOR M 9639 transistor 8029 l2 circuit PT/7045-J-600 Si 4593 3563 1231 241 8726 ta 8739
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.55 dB typical at 2 GHz CD ~o m TJ HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz

C 3807 transistor

Abstract: NE38018 NE38018-TI-67 NE38018-TI-68
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 2 V, ID= 5 mA • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

Contextual Info: NONLINEAR MODEL SCHEMATIC NE38018 CGD_PKG 0.003pF Q1 LG_PKG LG 0.55nH 0.7nH GATE LD LD_PKG 0.87nH 0.1nH CDS_PKG 0.15pF DRAIN CDX 0.04pF LS 0.28nH CCG_PKG 0.12pF LS_PKG 0.05nH CGX 0.12pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz

NE38018 V68

Abstract: NE38018 s2p NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215 NEC 703 NEC K 2500
Contextual Info: DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz

150J10

Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 2 V, ID= 5 mA • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz

nec D 8049 C

Abstract: LA 4127 ex 3863 nec 38018 ST 7702
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW C O S T M IN IA TU RE P L A S T IC P A C K A G E (S O T - 343 ) LOW N O IS E F IG U R E : 0.6 dB typica l at 2 G H z m T> <

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

LORB

Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18

NE662M04

Abstract: NE34018 NE38018 NE334S01 HEMT 36 ghz transistor Bipolar HJ Crystal Radio UPB1007K
Contextual Info: GPS/Satellite Radio NEW! UPB1007K Integrated GPS Receiver IC Key Features Key Specifications • Uses single 3V power supply • 3.0V VCC, 24mA typ I CC @ 3V • –45dBm max LO Leakage to RF Input • 70mW consumption • LNA Performance: 3dB NF typ, 15dB Gain,

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。

PD72001

Abstract: upc1237 PD4722 UPD63724A PC1892 uPD72002-11 uPD72011 upc2576 PD4721 TFT256
Contextual Info: CD-ROM版専 用 I C CD-ROM X13769XJ2V0CD00 06−1 専用 IC DSP • DSP（1/2） 品 名 インストラクション・サイクル ns µPD77016 µPD77018A µPD77019 µPD77019-013 30 16.7 16.7 16.7 固定小数点 固定小数点

NEc hemt

Abstract: nec hemt nonlinear models NE38018 AN1022 AN1033 AN1039 "Small Signal Amplifiers" 1e36 0.15 um pHEMT transistor
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1039 Optimizing LNA Performance for CDMA Application Using Nonlinear Simulator ABSTRACT CDMA DESIGN CONSIDERATIONS This application note will review the process by which designers can take advantage of the latest simulation tools such as

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

NE38018 V68

Abstract: NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1658 NEC

Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .