NEC SURFACE MOUNT TRANSISTORS Search Results

UPC 1018

Abstract: UPC 1008 PT 1017 uPC 1163 A uPC 1163
Contextual Info: NEC-1.1 GHz AGC AMPLIFIER UPC2723T GAIN vs. FREQUENCY AND AGC VOLTAGE FEATURES_ • FREQUENCY RESPONSE TO 1.1 GHz • 38 dB TYPICAL GAIN CONTROL RANGE • 5 V, 15 mA BIAS DIFFERENTIAL INPUT • SUPER SMALL SURFACE MOUNT PACKAGE

nec projector

Abstract: NE68533 AN1017 NE680 NE685 NE68519 NE68530
Contextual Info: California Eastern Laboratories AN1017 APPLICATION NOTE Ultra Miniature Surface Mount Transistor Packages: Concerns for Design Engineers Advances in technology are usually exponential. Surface mount transistors are no exception. Introduced in the mid1960s, the SOT-23 was the industry’s first miniature 3-lead

AN1017

Abstract: NE680 NE685 NE68519 NE68530 NE68533 stencil tension AN-1017 FS710
Contextual Info: California Eastern Laboratories AN1017 APPLICATION NOTE Ultra Miniature Surface Mount Transistor Packages: Concerns for Design Engineers Advances in technology are usually exponential. Surface mount transistors are no exception. Introduced in the mid1960s, the SOT-23 was the industry’s first miniature 3-lead

m33 tf 130

Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Contextual Info: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP

upc4744g2

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4744 SINGLE SUPPLY VOLTAGE, HIGH SPEED, WIDE BAND, QUAD OPERATIONAL AMPLIFIERS The µ PC4744 is quad high speed, wide band operational amplifier designed for single supply operation from +3 V to +32 V with low supply current drain. By using high speed PNP transistors for input and output circuits,

line follower robot

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4742 SINGLE SUPPLY VOLTAGE, HIGH SPEED, WIDE BAND, DUAL OPERATIONAL AMPLIFIERS The µ PC4742 is dual high speed, wide band operational amplifier designed for single supply operation from +3 V to +32 V with low supply current drain. By using high speed PNP transistors for input and output circuits,

PC4082G

Abstract: PC4082 PC4082C
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4082 J-FET INPUT DUAL OPERATIONAL AMPLIFIER DESCRIPTION The µPC4082 is a dual operational amplifier incorporating well matched ion implant P-channel J-FET on the same chip with standard bipolar transistors. The key features of this op amp is very low input bias current and high slew rate for ten

A2757

Abstract: PA2757GR-E2-AT
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2757GR SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2757GR is Dual N-channel MOS Field Effect 8 Transistors designed for switching application. 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1

a2794

Abstract: PA2794AGR PA2794
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2794AGR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2794AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2793AGR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2793AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1

A2792

Abstract: PA2792AGR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2792AGR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2792AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1

4 npn transistor ic 14pin

Abstract: C10535E PA103 lowest noise audio NPN transistor
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:

A2792

Abstract: PA2792GR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2792GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2792GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1

PA2794GR

Abstract: PA2794GR-E1-AZ a2794 transistor M22 marking
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2794GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2794GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1

IC-1975

Abstract: PC4082 C10535E
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4082 J-FET INPUT DUAL OPERATIONAL AMPLIFIER DESCRIPTION The µPC4082 is a dual operational amplifier incorporating well matched ion implant P-channel J-FET on the same chip with standard bipolar transistors. The key features of this op amp is very low input bias current and high slew rate for ten

UPC4081C

Abstract: C10535E
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4081 J-FET INPUT OPERATIONAL AMPLIFIER DESCRIPTION The µPC4081 is a single operational amplifier incorporating well matched ion implant P-channel J-FET on the same chip with standard bipolar transistors. The key features of this op amp is very low input bias current and high slew rate ten

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT /¿PC4742 SINGLE SUPPLY VOLTAGE, HIGH SPEED, WIDE BAND, DUAL OPERATIONAL AMPLIFIERS The nPC4742 is dual high speed, wide band operational am plifier designed for single supply operation from +3 V to +32 V with low supply current drain. By using high speed PNP transistors for input and output circuits,

a2791

Abstract: M20S PA2791GR G1820 diode MARKING M16
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2791GR SWITCHING N- AND P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. 8 5 N-channel 1 : Source 1

2SC5664

Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation

PA2757GR

Abstract: NEC diode
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2757GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The μPA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance RDS on 1 = 36 mΩ MAX. (VGS = 10 V, ID = 3.0 A)

Ac line filters in mil grade

Abstract: C10535E PC4742 uPC4742
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4742 SINGLE SUPPLY VOLTAGE, HIGH SPEED, WIDE BAND, DUAL OPERATIONAL AMPLIFIERS The µ PC4742 is dual high speed, wide band operational amplifier designed for single supply operation from +3 V to +32 V with low supply current drain. By using high speed PNP transistors for input and output circuits,

C10535E

Abstract: 4744
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4744 SINGLE SUPPLY VOLTAGE, HIGH SPEED, WIDE BAND, QUAD OPERATIONAL AMPLIFIERS The µ PC4744 is quad high speed, wide band operational amplifier designed for single supply operation from +3 V to +32 V with low supply current drain. By using high speed PNP transistors for input and output circuits,

MP 35A DIODE

Abstract: 2SK3060 MP-25 MP-25Z D1309
Contextual Info: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistors 2SK3060 SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAG E DIM EN SIO NS in m illim eter 10.6 MAX. 4.8 MAX. 03.6*0.2 DESCRIPTION This product is N-Channel M OS Field Effect Transistor de­

2SK3062

Abstract: MP-25 MP-25Z d13101
Contextual Info: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistors 2SK3062 SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE P A C K AG E DIM EN SIO NS in millimeter D E S C R IP T IO N This product is N-Channel M OS Field Effect Transistor de­ signed for high current switching applications.