NEC SPEED GRADE Search Results

2SA1424

Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
Contextual Info: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and

Contextual Info: DEC 2 1992 NEC NEC Electronics Inc. JJPD488130, 488170 18-M egabit Rambus DRAM Advance Information October 1992 Description Ordering Information The /L/PD488130 and juPD488170 Rambus DRAMs RDRAM™ are extremely-high-speed dynamic CMOS RAMs organized as 2M words by 8 or 9 bits. Using its

UPD78F0818GK

Contextual Info: µPD78081x 8-BIT MICROCONTROLLERS WITH CAN CONTROLLER The µPD78081x devices are high-speed 8-bit microcontrollers with a CAN controller. The integration of the high-speed microcontroller and the CAN controller, together with the high level of integration using NEC’s

Contextual Info: DATA SHEET NEC M O S INTEGRATED CIRCU IT 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTIO N The //PD784915 is a member of the NEC 78K/IV Series of microcontrollers equipped with a high-speed 16-bit CPU and a successor to the 78K/I Series 8-bit single-chip microcontrollers for VCR software servo control.

D1632

Abstract: DC1054A 1S2835A3 1S2835 1S2836 NEC DIODES 1S2836A4
Contextual Info: DATA SHEET NEC SILICON SWITCHING DIODES 1S2835,1 S2836 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : COMMON ANODE MINI MOLD FEATURES PACKAGE D IM ENSIO NS @ Low capacitance: Ct = 2.5 pF TYP. in m illim e te rs High speed switching: t rr = 4.0 ns M A X .

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 524,288 words x 32 bits x 4banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

1SS221

Abstract: ss221 1SS220 DC-1056A 1SS221A14
Contextual Info: DATA SHEET NEC SILICON SWITCHING DIODES 1SS220.1 SS221 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODES MINI MOLD FEATURES PACKAGE DIMENSIONS • Low capacitance: Ct = 4.0 pF M A X . in m illim e te r s • High speed switching: t rr = 3.0 ns M A X . 2.8 ± 0.2

TA 1319 AP

Abstract: pd4564323
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564323 is a high-speed 67,108,864 bits synchronous dynamic random-access memories, organized as 524,288 words x 32 bits x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

MEC 1310 nu

Abstract: 4564841G db3 bl
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441,4564841 are high-speed 67,108,864-bit synchronous dynamic random-access m emories, organized as 4,194,304x4x4 and 2,097,152x8x4 wordxbitxbank , respectively.

p103 t020

Abstract: 5A/p103 t020
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 78356 A 16 BIT SINGLE-CHIP MICROCOMPUTER The yuPD78356(A) contains a high-speed, high-performance 16-bit CPU and a data bus whose width can be switched between 8 bits and 16 bits (bus sizing function). The /xPD78356(A) also contains an ultrahigh-speed A/D converter and high-speed D/A converter, which are

D4564323

Contextual Info: PRELIMINARY DATASHEET NEC MOS INTEGRATED CIRCUIT 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564323 is a high-speed 67,108,864 bits synchronous dynamic random -access memories, organized as 524,288 w o rd s x 3 2 b its x 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x

71051

Abstract: 71055 71059 EA-C10 0.18-um CMOS technology characteristics CMOS-10 RAC RAMBUS fi01 2127k CB-C10
Contextual Info: EA-C10 2.5-Volt, 0.25-Micron drawn CMOS Embedded Array NEC Electronics Inc. Preliminary March 1997 Figure 1. Embedded Array Core Integration Description The high-speed 0.25 µm drawn (0.18 µm L-effective) EA-C10 embedded array family offers both support for

2SC1275

Abstract: 2SC1926
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters

2SC1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that in millimeters

V810 mo

Abstract: U10661E IEEE754 PD70732 uPD70732GD-16-LBB V805 V810 32-BITDISPLACEMENT V810 nec
Contextual Info: PRELIMINARY PRODUCT DATA SHEET INFORMATION MOS Integrated Circuit µPD70732 V810TM 32-BIT MICROPROCESSOR The µPD70732 a.k.a. V810 microprocessor is NEC’s first microprocessor of the V810 familyTM for embedded control applications. The V810 employs a RISC architecture for embedded control applications. This product has high-speed real

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT 4-BIT SINGLE-CHIP MICROCONTROLLER The ¿¡PD75P3018A replaces the ,uPD753017A’s internal mask ROM with a one-time PROM, and features expanded ROM capacity. The ¿¡PD75P3018A inherits the function of the ¿¡PD75P3018, and enables high-speed operation at

Contextual Info: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

MPD424400V

Abstract: P20V-254-4O0 T777 marking 80L
Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD424400-L 4 M BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /iPD424400-L is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption.

Nec b 616

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC DATA SH EET MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SK1399 N-CHANIMEL MOS FET FOR HIGH SPEED SW ITCH IN G

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4512 8 4 4 1 ,4 5 1 2 8 8 4 1 ,4 5 1 2 8 1 6 3 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD424400 4M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ftP 0424400 is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption.