NEC ASU Search Results

42272

Contextual Info: NEC pPD42271, 42272 Picture-in-Picture Generator NEC Electronics Inc. October 1991 Description Pin Configuration The /j P D 4 2 2 7 x 42271 and 42 2 7 2 is a picture-in-picture generator designed for use in NTSC and PAL broad­ castin g systems. Picture-in-picture describes the de­

transistor NEC D 822 P

Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

Contextual Info: DATA SHEET_ NEC MOS Integrated Circuit /¿PD16715 384 OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64 GRAY SCALES The /¿PD16715 is a source driver for TFT-LCDs capable of dealing with displays with 64 gray scales. Data input is

MN101C c compiler

Abstract: 7 segment display 5611 80386 programmers manual intel 8212 data sheet hp 5610 M101C panasonic 154 transistor 5609 MN101C00 PC9800
Contextual Info: MICROCOMPUTER MN101C00 MN101C00 Series C Compiler User’s Manual Usage Guide Pub.No.11420-070E PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. MS-DOS is a registered trademark of Microsoft Corporation USA . PC-9800 is a registered trademark of NEC.

NEC 2532 n 749

Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation

Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUITS 8-BIT SINGLE-CHIP MICROCONTROLLER The ,uPD78F9046 is a ,uPD789046 sub-series product of the 78K/0S series. The ,uPD78F9046 differs from the ,uPD789046 in that it uses flash memory rather than internal masked ROM.

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)

R5F61652FPV

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz

R5F61662FPV

Abstract: P61AB MP 1008 es R5F61662 R5F61665FPV ERN 1387 dts master audio DL 1200 Nippon capacitors R5F61665
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 6 1 P 3 4 B 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION The ¿¡PD64P34B is a m icrocontroller for infrared rem ote control transm itters w hich is provided with a one-tim e

R5F61653RN50FPV

Abstract: Nippon capacitors ir receiver module sj 1838 P012 World transistors R5F61653RFPV R5F61654RFPV IFR 2945 SERVICE MANUAL sc 1287
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC asu

Abstract: 13E3h 1442H
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

circuit diagram of GSM based home automation syst

Abstract: R5F61668RFPV lsi tms 1951 nl R5F61668 H8SX1668 A1719 h528 Nippon capacitors R5F61664RFPV h8sx programing
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET NEC BIPOLAR DIGITAL INTEGRATED CIRCUIT _ ¿¿PB1504GR 1.1 GHz LOW-POWER TWO-MODULUS PRESCALER -=-64/65,-128/129 FOR MOBILE TELEPHONE DESCRIPTION /¿PB1504G R is a 64/6 5 ,1 2 8 /1 2 9 two modulus prescaler to construct pulse sw allow type PLL frequency synthesizer

TFP-120

Abstract: cmos digital catalog H023 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SEC ' MC-42256AA40 262,144 x 40-Bit Dynamic CMOS RAM Module ' NEC Electronics Inc. Prelim inary Information May 1992 Description Pin Configuration The M C-42256AA40 is a fa s t-p a g e dynam ic RAM m od­ ule organized as 262,144 words by 40 bits and designed

U7777

Abstract: D41416
Contextual Info: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz • High Power Gain

3SK245

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK245 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain G ps = 23.0 dB TYP. @ = 900 MHz • Low Noise Figure NF = 2.4 dB TYP. (@ = 900 MHz)

Contextual Info: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER D E S C R IP T IO N The ^¡PD780701Y and 780702Y are the ^¡PD780701Y Subseries products of the 78K/0 Series. These m icrocontrollers have DCAN controller ,uPD780701 Y , lEBus controller (,uPD780702Y), A/D converter, timer, serial

Contextual Info: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /fPG132G L-BAND SPDT SWITCH DESCRIPTION /¿PG132G is an L-Band SPDT Single Pole D oubleThrow GaAs FET switch w hich w as developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.