NEC 358 AMPLIFIER Search Results

nec k 813

Abstract: s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A NE33284AS
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

PC358C

Abstract: K 347 PC358 LM358 nec 358 amplifier IC LM358 lm358 replacement
Contextual Info: NEC NEC Electronics Inc. D e scrip tio n //P C 3 5 8 D U A L LO W -P O W E R O P E R A T IO N A L A M P L IF IE R Pin Configuration The /¿PC358 is designed to operate from a single power supply, with the option to operate from split power sup­ plies. This amplifier offers the circuit designer low power

IC ATA 2398

Abstract: ata 2398 transistor D 2395 NE33284A te 2395 TRANSISTOR low noise FET NEC U TVR 681
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The N E33284A is a Herero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for GPS,

nec 358 amplifier

Abstract: operational amplifier 458 PC1458 LPC-1458
Contextual Info: NEC NEC Electronics Inc. D escription yuPC1458 DUAL GENERAL PURPOSE OPERATIONAL AMPLIFIER Pin Configuration The /UPC1458 ¡a a dual general purpose operational amplifier w hich incorporates internal frequency com pen­ sation. This circuit w a s designed for a wide range of g e n ­

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

NE42484A

Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •

2SC3570

Abstract: 358 nec
Contextual Info: NPN SILICON POWER TRANSISTOR 2SC3570 D ESCRIPTIO N The 2SC3570 is NPN silicon epitaxial transistor designed for switching regulator, DC-DC converter and high frequency power PA C KA G E DIM ENSIONS in millimeters inches amplifier application. 10.5 MAX. (0.413 MAX.)

sl2 357

Contextual Info: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold

NEC D288

Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

TD-2411

Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters PART NUMBER QUANTITY 2SC5011-T1 3 Kpcs/Reel.

sem 2105 16 pin

Abstract: sem 2105
Contextual Info: DATA SH E E T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz Gate Length: Lg = 0.8 jum recessed gate Gate Width: Wg = 330 fjm 4 pins super mini mold Tape & reel packaging only available

nec 2412

Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1

Contextual Info: DATA SHEET NEC / ELECTRON DEVICE SILICO N TRAN SISTO R / ^ ^ 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in m illim eters • High G ain B a ndw idth P rodu ct: f j = 250 M Hz TYP.

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

g2ns

Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Contextual Info: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold

Contextual Info: SEC NEC Electronics Inc. D e scrip tio n ¿/PC1458 DUAL GENERAL PURPOSE OPERATIONAL AMPLIFIER Pin C o n figu ratio n The //PC1458 ¡a a dual general purpose operational amplifier which incorporates internal frequency com pen­ sation. This circuit w a s designed for a wide range of g e n ­

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

nec 2401 831

Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

NE332

Abstract: NE33284AS nec k 813 s11 diode shottky IEI1207 NE33284A NE33284A-SL NE33284A-T1 NE33284A-T1A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

vav99

Abstract: yr yf
Contextual Info: NEC i i f / v Silicon P o w e r T ran sisto r t z 2SD992 NPNX V 3 9 > h =7 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier, L o w Speed Sw itching £{•?!£[*] Unit : mm o u is - m m , 2.3 ± 0 .2 6. 5 + 0.2 ° V c E (sat)A i / J ''? o