D2225 Search Results

D2225UK

Contextual Info: TetraFET D2225UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS

TL497

Abstract: TL497A rIP 31 TRANSISTOR 8bc regulator L497A transistor 8bc
Contextual Info: TEXAS INSTR LIN/INTFC lôE J> WM 0 ^ 1 7 2 4 0Q7TSfl3 7 TL497AM, TL497AI, TL497AC SWITCHING VOLTAGE REGULATORS D2225, JU NE 1 9 7 6 -R 6 V IS E D OCTO BER 1988 High Efficiency . , . 6 0 % or Greater TL4 97A M . . . J PAC KA G E TL497AI, T L4 97A C . . . D, J, OR N PAC KA G E

D2225UK

Contextual Info: TetraFET D2225UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS

CL333

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S72AWJA -5, -6,-7 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six

diode D83

Abstract: D83 - 004 d83 004 diode D83 004 D22 diode marking code r63400 D51X d95-3000 D93G D75-1100
Contextual Info: T W L À M I N A S J EN ISO 9001:2000 v^Z ertifik a t: 75 .1 0 0 .6 7 3 TUV Rheinland InterCert SEMICONDUCTOR POWER DEVICES DIODES , €UROPRODUKT 2004 Marking D61D - 250 - 22 - N O -Œ D -D special requirements and selections code external leads code base code for stud types letter sign

Contextual Info: MITSUBISHI LSIs MH32S72BBFA -7,-8 2,41 5,9 1 9,1 04-B IT 33,554,432-W O R D BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit S ynchronous DRAM stacked structural module. This consist of th irty -s ix industry standard 1 6 M x 4

Contextual Info: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous

Contextual Info: M IT S U B IS H I LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-W O RD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous

V21322

Abstract: W211159 AJT20 D222574 B218846 C215259 E214962 AJT50 Q211683 G212917
Contextual Info: General Purpose US US Fuses General Purpose Fuses American Power Fuses AMP-TRAP 2000 AJT Class J TD SMARTSPOT® with Maximum circuit protection Amp-trap 2000® SmartSpot® AJT fuses now provide a visual open fuse indicator. With advanced material technology added to the existing product line

IDT77301

Abstract: 31F4
Contextual Info: UTOPIAFIFO PRELIMINARY INFORMATION 1 TO 4 IDT77301 128 X 9 X 4 DEMULTIPLEXER-FIFO Integrated Device Technology, Inc. FEATURES: GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDT77301 UtopiaFIFO is a high-speed, low power

Contextual Info: UTOPIAFIFO PRELIMINARY INFORMATION 1 TO 4 IDT77301 128 X 9 X 4 DEMULTIPLEXER-FIFO Integrated Device Technology, Inc. FEATURES: GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDT77301 UtopiaFlFO is a high-speed, low power

CD61000-4-2

Abstract: VBUS54ED-FBL-G4-08 IS61000-4-2
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . I INNOVAT AND TEC O L OGY VBUS54ED-FBL N HN Diodes O 19 62-2012 Diodes - ESD Performance in LLP Package ESD-Protection Bus Port Array KEY BENEFITS • • • • Low load capacitance of 0.6 pF Low maximum leakage current of < 0.1 µA at the working voltage of 5.5 V

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S72AWJA -6,-7 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This

JXXX

Contextual Info: MITSUBISHI LSIs e MH64S72QJA -7,-8 e°- 4,831,838,208-BIT 67,108,864-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY S o m e o f c o n te n ts are s u b je c t to c h a n g e w ith o u t n o tice . DESCRIPTION The MH64S72QJA is 67108864 - word x 72-bit

MH32S72BBFA

Abstract: MH32S72BBFA-7 MH32S72BBFA-8
Contextual Info: MITSUBISHI LSIs MH32S72BBFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 16M x 4

Contextual Info: UTOPIAFIFO PRELIMINARY INFORMATION 1 TO 4 IDT77301 128 X 9 X 4 DEMULTIPLEXER-FIFO FEATURES: GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDT77301 UtopiaFlFO is a high-speed, low power single input port supplying four demultiplexing FIFO output

chn 807

Abstract: 4R040
Contextual Info: UTOPIAFIFO PRELIMINARY INFORMATION 1 TO 4 IDT77301 128 X 9 X 4 DEMULTIPLEXER-FIFO FEATURES: GENERAL DESCRIPTION • • • • • • • • • • • • • • The IDT77301 UtopiaFlFO is a high-speed, low power single input port supplying four demultiplexing FIFO output

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

MSM531655E

Abstract: TSOP70-P-400 T8D20 065K
Contextual Info: O K I Semiconductor MSM531655E_ 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM • DESCRIPTION The OKI MSM531655E is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit

MH32S72DBFA

Abstract: MH32S72DBFA-6
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

Thunderbolt port

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . I INNOVAT AND TEC O L OGY VBUS54ED-FBL N HN Diodes O 19 62-2012 Diodes - ESD Performance in LLP Package ESD-Protection Bus Port Array KEY BENEFITS • • • • Low load capacitance of 0.6 pF Low maximum leakage current of < 0.1 µA at the working voltage of 5.5 V

MH32S72DBFA

Abstract: MH32S72DBFA-6
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

Contextual Info: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous