CL333 Search Results

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)

Contextual Info: V826616J24SC 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply

ProMOS ddr2

Abstract: 2rx16 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 V91676
Contextual Info: V916764B24QA 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM SODIMM Features Description • The V916764B24QA memory module is organized as 67,108,864 x 64 bits in a 200 pin memory module. The 64M x 64 memory module uses 8 ProMOS 32M x 16 DDR2 SDRAMs. The x64 modules

V916765K24QA

Contextual Info: V916765K24QA 128M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM MODULE Features Description • 240-pin, unbuffered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

g5400

Contextual Info: V916732J24QC 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM MODULE Features Description • • • • The V916732J24QC memory module is organized as 33,554,432 x 64 bits in a 240 pin memory module. The 32M x 64 memory module uses 4 ProMOS 32M x 16 DDR2 SDRAMs. The x64 modules are ideal for use in high performance computer

Contextual Info: V917565K24QA 128M x 72 HIGH PERFORMANCE UNBUFFERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, unbuffered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V917564U24QA 512M x 72 HIGH PERFORMANCE REGISTERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, registered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)

Contextual Info: V916632B24QA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM SODIMM Features Description • The V916632B24QA memory module is organized as 33,554,432 x 64 bits in a 200 pin memory module. The 32M x 64 memory module uses 8 ProMOS 16M x 16 DDR2 SDRAMs. The x64 modules

Contextual Info: PRELIMINARY V59C1512 404/804/164 QA HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 DDR2-400 DDR2-533 DDR2-667 Clock Cycle Time (tCK3) 5ns 5ns 5ns Clock Cycle Time (tCK4) 5ns 3.75ns

Contextual Info: V826632B24SA 256 MB 200-PIN DDR UNBUFFERED SODIMM 32M x 64 Features Description • JEDEC 200 Pin DDR Unbuffered Small-Outline, Dual In-Line memory module SODIMM ; 33,554,432 x 64 bit organization. ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages

Contextual Info: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns

Contextual Info: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns

Contextual Info: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns

Contextual Info: V917565K24QA 128M x 72 HIGH PERFORMANCE UNBUFFERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, unbuffered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V917565N24QA 128M x 72 HIGH PERFORMANCE REGISTERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, registered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V826616J24SA 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE Features Description • 184 Pin Unbuffered 16,777,216 x 64 bit Organization DDR SDRAM Modules ■ Utilizes High Performance 16M x 16 DDR SDRAM in TSOPII-66 Packages ■ Single +2.5V ± 0.2V Power Supply

Contextual Info: V59C1512 404/804/164 QD*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 19A DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns

Contextual Info: V59C1512 404/804/164 QC HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V917564U24QA 512M x 72 HIGH PERFORMANCE REGISTERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, registered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V58C2512 804/404/164 SA*I HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz