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    NE021 MICROWAVE OSCILLATOR Search Results

    NE021 MICROWAVE OSCILLATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    RZ1214B35YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    74LS626N
    Rochester Electronics LLC 74LS626 - Voltage Controlled Oscillator PDF Buy

    NE021 MICROWAVE OSCILLATOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE02135

    Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


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    NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR PDF

    NE021 microwave oscillator

    Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original
    NE021 NE021 NE02107 OT-23) 34-6393/FAX NE021 microwave oscillator 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225 PDF

    NE021 microwave oscillator

    Abstract: 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION_


    OCR Scan
    NE021 NE02107 OT-23) 6393/FAX NE021 microwave oscillator 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec PDF

    Micro-X Marking 865

    Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original
    NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F PDF

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan
    NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan
    AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF