NDS99 Search Results

NDS9955

Abstract: SOIC-16
Contextual Info: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS9936

Contextual Info: February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

PF5085

Abstract: NDS9959
Contextual Info: February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDS9942

Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
Contextual Info: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3

d3s diode

Abstract: NDS9948 DD4001
Contextual Info: May 1996 N a t i on a l Semiconductor' NDS9948 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDS9925A

Abstract: SOIC-16 8G24
Contextual Info: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

NDS9925A

Contextual Info: N July 1996 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

Contextual Info: National Semiconductor” May 1996 NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement m ode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology.

AAW2

Abstract: CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A
Contextual Info: N/l IC O N D U C TO R tm NDS9933A Dual P-Channel Enhancem ent M ode Field Effect Transistor Features General Description T h is P -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e f­ • -2 .8 A , - 2 0 V. R,D S o n fe c t tra n s is to r is p ro d u c e d u s in g F a irc h ild ’s p ro p ri­

Contextual Info: NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

Contextual Info: February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDS9955

Contextual Info: February 1996 FAIRCHILD iM IC D N D U C T O R tm NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

la7840

Contextual Info: F A I R C H I L February 1996 D :MICÜNDUCTÜR- m NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel en hance m en t m ode pow er field effect transistors are produced using Fairchild's proprietary, high cell

transistor 1gs

Abstract: A7840
Contextual Info: May 1996 N NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

NDS9953A

Contextual Info: February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

NDS9952A

Contextual Info: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

9933A

Contextual Info: F A IR C H IL D S eptem ber 1996 M lC O N D U C T O R NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

S9943

Abstract: NDS9943
Contextual Info: February 1996 N NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N - and P -C h a n n e l e n h a n c e m en t m o d e po w er field e ffec t transistors a re prod uced using • N -C h a n n e l 3 .0 A , 2 0 V , R r

NDS9957

Contextual Info: N February 1996 NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

NDS9943

Contextual Info: N February 1996 NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very

NDS9955

Contextual Info: February 1996 N NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel enhance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is

785-500

Abstract: it 785-500 NDS9947
Contextual Info: F e b ru a ry 1 9 9 6 N NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e P -C hannel en hance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is

NDS9936

Contextual Info: February 1996 N NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

IRF540

Abstract: IRF540 application IRF5402 NDS9945 irf540 equivalent A3933EQ IRF5405 j142 30D2 J132
Contextual Info: VCCOUT VMOTOR 1 .1uf W1 JUMPER J25 3 J13 2 27 BRKSEL J15 2 J17 BRAKE 1 2 H1 1 J18 26 24 2 20 22 1 PWM GHB CB BRKSEL SB BRAKE GLB 9 CB 10 SB 8 GLB 7 H1 GHC GHC H3 2 R11 100K C9 470pf SC GLC 5 CC 6 SC 4 GLC 3 .047uf 2 J14 2 2 U3B 1 NDS9945 1 4 3 3 30 R9 30 J19