NDP606B Search Results

Contextual Info: NDP606BL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)10 I(D) Max. (A)44 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)132 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ

NDP406BL

Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
Contextual Info: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect

ndp606a

Contextual Info: National Semiconductor March 1993 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high

NDP605A

Abstract: ndp605A TO-220 NDP606A 025X C1995 NDP605B NDP606B 048X0 MX60
Contextual Info: NDP605A NDP605B NDP606A NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary high cell density DMOS technology This very high density process has been especially tailored to minimize on-state resistance provide superior switching performance and withstand high energy pulses in the avalanche and commutation

78017

Abstract: 7S1 zener diode NDP605A NDP605B NDP606A NDP606B
Contextual Info: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high

B5G1

Abstract: ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41
Contextual Info: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high

Contextual Info: NDP606BEL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)10 I(D) Max. (A)44 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)132 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

NDS9945

Abstract: 20W Solenoid Driver 5V GATE TO SOURCE VOLTAGE MOSFET NDP706A Automatic Valve Systems parallel MOSFET Transistors parallel mosfet cgs resistor control circuit for mosfet to turn on and off Deutsch time delay Relays
Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection General Description Features The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch A CMOS logic compatible ON OFF input controls the output gate drive voltage In the

Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the

NDP505A

Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
Contextual Info: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80

20W Solenoid Driver

Abstract: LM9061 LM9061M LM9061N M08A NDB708A NDP706A NDP706B NDP708A MOSFETs Application Hints
Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the

ndp706b

Abstract: PWM power motor driver NDS9945
Contextual Info: LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the