NDP605B Search Results

Contextual Info: NDP605BL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)44 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)132 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect

ndp606a

Contextual Info: National Semiconductor March 1993 NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high

NDP605A

Abstract: ndp605A TO-220 NDP606A 025X C1995 NDP605B NDP606B 048X0 MX60
Contextual Info: NDP605A NDP605B NDP606A NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary high cell density DMOS technology This very high density process has been especially tailored to minimize on-state resistance provide superior switching performance and withstand high energy pulses in the avalanche and commutation

78017

Abstract: 7S1 zener diode NDP605A NDP605B NDP606A NDP606B
Contextual Info: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high

B5G1

Abstract: ndp605A TO-220 NDP606A NDP605A NDP605B NDP606B zener diode u41
Contextual Info: March 1993 Semiconductor NDP605A/NDP605B, NDP606A/NDP606B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's proprietary, high

Contextual Info: NDP605BEL Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)44 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)132 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-65õ

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

NDP406BL

Abstract: NDP508AEL MTP3055EL ndp706al NDP610AL NDP606AL NDP405BL NDP605AL NDP405AL NDP510AL
Contextual Info: *NSCS TO-220AB Logic Level DMOS \ Gii D, N Channel •o Pd Watts M ax 150 (m il) M ax (Amps/Volts) (Amps) Max 38 21/5 42 Device 60 NDP706AEL NDP710AL 42 21/5 40 NDP706BEL 13/5 26 100 NDP606AEL 12/5 24 NDP606BEL 120 7.5/5 15 60 NDP506AEL NDP708AEL 150 6.5/5

NDP505A

Abstract: NDP705AE NDP605A NDP405B NDP510A NDP510AE NDP510B NDP610A NDP610AE NDP610B
Contextual Info: •NSCS 741 0031460 bSD113D TO-220AB DMOS N Channel N Channel rDS on @ ^ G S (Volts) Min Device (ma) Max 100 NDP710A •d rDS(on) @ lu/^GS Po (Volts) Min (Amps) (Watts) (Amps/Volts) Max Max 38 21/10 42 42 21/10 40 150 60 NDP710B ■ NDP610A 65 13/10 26 80

NDP406BL

Abstract: DP408 DP706 NDP706AL NDP405AL DP608 NDP606AL P610BL P610B DP505
Contextual Info: «NSCS Power MOSFETS continued N Channel r D S (o n | I q/^ G S (Volts) Min Device 100 NDP710AEL •n Pn r D S ( « l ) ® * d/ V B S (Amps) (Watts) (m ii) (Amps/Volts) Max Max Max 38 21/5 42 42 21/5 40 Min 150 NDP706AEL N DP710AL NDP710BEL Device (m a )