NCC KY Search Results

JPP-95

Abstract: t3.15A/250V optocoupler 356T TEA1733 smd diode MARKING U3 SOD123 2KBP206G NCC KY NCC kmg smd diode GW t3.15A/250V fuse
Contextual Info: UM10385 GreenChip 65 W TEA1733 L T demo board Rev. 02 — 2 June 2010 User manual Document information Info Content Keywords Notebook adapter, TEA1733(L)T, Low standby power, High efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics, and Printed-Circuit

Contextual Info: UM10421 GreenChip 65 W TEA1733LT/T printer reference board Rev. 1 — 17 December 2010 User manual Document information Info Content Keywords Printer adapter, TEA1733LT/T, low standby power, high-efficiency, fixed frequency flyback, jitter Abstract This manual provides the specification, schematics and Printed-Circuit

TEA1703

Abstract: transistor smd marking m6
Contextual Info: UM10437 GreenChip 65 W TEA1738LT/T and TEA1703 demo board Rev. 1 — 28 February 2011 User manual Document information Info Content Keywords Notebook adapter, TEA1738LT/T, TEA1703, fixed frequency, ultra-low standby power, high-efficiency, slim line Abstract

Contextual Info: HN62W454 Series 524288-word x 8-bit/ 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-403A Z Rev. 1.0 May. 9, 1996 Description The HN62W454 is a 4-Mbit CMOS mask-Programmable ROM organized either as 262144 words by 16 bits or 524288 words by 8 bits. Realizing low power consumption, this memory is allowed for battery operation.

1X16

Abstract: 1X32 BA911
Contextual Info: T O S H IB A TC58F400F/401F/FT-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS X8 BITS/262,144 WORDS x16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized

Contextual Info: TOSHIBA TC58F400/401FI/FTI-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-MBIT 524,288 WORDS x8 BITS/262,144 WORDS x16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized

Contextual Info: TOSHIBA TC58F400F/401F/FT-90,10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4-M B IT 524,288 WORDS x 8 B IT S /262,144 WORDS x 1 6 BITS CMOS FLASH M EM O R Y DESCRIPTION The TC58F400/401 is a 4,194,304-bit electrically erasable and programmable flash memory organized

TEA1792

Abstract: TEA1836 AN11149 2KBP206G
Contextual Info: UM10758 TEA1836DB1094 TEA1836XT + TEA1792T 65 W notebook adapter Rev. 1 — 4 December 2013 User manual Document information Info Content Keywords TEA1836DB1094, TEA1836XT, very low standby power consumption, high peak power, active X-cap discharge, burst mode operation, flyback

Contextual Info: HN62454B Series 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-471A Z Rev. 1.0 May. 10, 1996 Description The HN62454B is a 262144 words by 16 bits CMOS Mask Programmable ROM. A high speed access of 85/100 ns (max) is the most suitable to the system using a high speed micro-computer by 16 bits.

Contextual Info: HN62W448N Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-484 A (Z) Preliminary Rev. 0.1 Jun. 20, 1996 Description The Hitachi HN62W448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288words by 16-bits or as 1048576-words by 8-bits. Realizing low power consumption with low voltage

Contextual Info: TOSHIBA TA7267BP TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T477C7RP • m m * m m p ■ BRIDGE DRIVER The TA7267BP is a Bridge Driver for brushed DC Motor Rotation control. Forward Rotation, Reverse Rotation, Stop and Braking operations are available.

Contextual Info: HN62V454 Series 524288-word x 8-bit/ 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-615A Z Rev. 1.0 Jul. 4, 1996 Description The HN62V454 is a 4-Mbit CMOS mask-Programmable ROM organized either as 262144 words by 16 bits or 524288 words by 8 bits. Realizing low power consumption, this memory is allowed for battery

hitachi plasma electronic diagram

Abstract: ha1670 OUT34 ha16707
Contextual Info: ADE-204-008 HA16707/R, HA16708/R 34-bit DC Plasma Display Cathode Driver H IT A C H I The HA16707/HA16708 is a cathode driver IC developed for DC plasma displays employing the BiCMOS process. The logic circuit including a shift register consists of a 5-volt operating CMOS circuit. The output

Hp 2564

Contextual Info: VT 2365/66 8,192 x 8 STATIC READ ONLY MEMORY FEATURES DESCRIPTION • 8,192 x 8-bit organization The VT2365/66 h ig h-p erform an ce Read Only M em ory is organized 8,192 words by e ig ht bits with an access tim e o f 150 ns. The ROM is co m p a tib le with all microprocessors a nd similar

Contextual Info: IS02-CM0S MITEL 3 Volt Integrated DTMF Receiver Features ISSUE 3 • 2.7 - 3.6 volt operation • Complete DTMF receiver • Low power consumption • Internal gain setting amplifier • Adjustable guard time • Central office quality • Power-down mode

Contextual Info: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not

ns8002

Abstract: CSB640 Tda 403 PD7759 D7759GC D7759 KBR-640B UPD7759
Contextual Info: N E C ELECTRONICS INC blE J> • b M27525 0 Q3 3 3b 2 7 T 4 « N E C E SEC . NEC Electronics Inc. fiPD7759 ADPCM Speech Processor Description Pin Configurations T h e ¡j P D 7759 is a sp eec h p ro c ess in g LSI th a t, w ith an 40-Pin Plastic DIP e x te rn a l R OM , u tilize s a d a p tiv e differen tial pulse-co de

Alc201A

Abstract: HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN
Contextual Info: Intel 852GME Interactive Client Reference Design User’s Guide October 2003 Order Number: 274000-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN

75P008

Contextual Info: jW / X Y * 1^1Mid NEC Electronics Inc. fi PD7500x/75P008 General-Purpose 4-Bit Microcomputers With Multiple l/Os Description The /j PD7500x/75P008 is a family of single-chip CMOS microcomputers containing CPU, ROM, RAM, I/O ports, several timer/counters, vectored interrupts, subsystem

nec 424100

Abstract: upd424100 424100 424100-L upd424100-80 upd424100-80l 408L4
Contextual Info: NEC MOS INTEGRATED CIRCUII /¿ P D 4 2 4 1 0 0 , 4 2 4 1 0 0 -1 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE Description The fiPD 424100, 424100-L are 4 194 304 words by 1 bit dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

kbr8.0m

Abstract: P-QFP64-1414-0 uoc top 80 pin tv MX-38T P64-101CM PM-48 BM11117 tmp87ph TMP87PH48 KYOCERA KBR4.0
Contextual Info: TOSHIBA TMP87PH48/PM48 CMOS S'Bit Microcontroller TMP87PH48U/DF. TMP87PM48U/DF The TMP87PH48 Is a one-time PROM microcontroller with low«power 128 Kbits 16 Kbytes electrically programmable read only memory for the TMP87CH48 system evaluation. The TMP87PM48 is a One-time

Lariteck

Abstract: F9232 STR 61001 EASY2254 T60403-L5032-X017 smd PULSE TRANSFORMER ST5141 T60403-L4021 bv ei 301 2107 MD 5408
Contextual Info: 6, 0(16 ,&V IRU &RPPXQLFDWLRQV Framing and Line Interface Component for PCM 30 and PCM 24   FALC 54 and FALC -LH PEB 2254 PEB 2255 Preliminary transformer recommendation Application Note 10.98 Q@7Ã!!$$ Sr‰v†v‚ÃCv†‡‚…’à 8ˆ……r‡ÃWr…†v‚Ã)Ã

Contextual Info: KM418C256LL CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM418C256LL is a CMOS high speed 262,144 b it x 18 D ynam ic Random A cce ss M em ory. Its design is o p tim ized fo r high perform ance ap p lica tio n s

CJ 4148 ZENER

Abstract: motorola 1N4148 n5406 t184 T2258 PHILIPS toroidal core
Contextual Info: A pril 1998 M icro Linear ML4812 Power Factor Controller GENERAL DESCRIPTION FEATURES The M L4812 is designed to o ptim ally facilitate a peak current control boost type power factor correction system. Special care has been taken in the design o f the M L4812