NAND INTEL Search Results

NAND02GR3B2D

Abstract: NAND02GR4B2D NAND02GW3B2DN6 NAND02G-B2D NAND02GW3B2D VFBGA63 nand flash ONFI 3.0 ONFI nand 2112B
Contextual Info: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications ■ NAND interface

TC4SU11F

Abstract: marking apf
Contextual Info: TOSHIBA TC4SU11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4SU11F 2 INPUT NAND GATE TC4SU11F is 2 input NAND gate respectively. The internal circuit of only basic NAND circuit w ithout the waveform shaping inverter. Therefore, this is suitable for the applications in liner

TC58NVM9S3ETA00

Abstract: TC58NVM9S3Et TC58NVM9S3E DIN2111 PA12 PA13 TC58NVM9S3
Contextual Info: TC58NVM9S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512M BIT 64M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVM9S3E is a single 3.3V 512Mbit (553,648,128bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 512blocks.

TC58NVG1S3ETA00

Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Contextual Info: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

TC58128FT

Abstract: 48-P-1220-0 kc04 TC58128 kc-04
Contextual Info: TOSHIBA TENTATIVE TC58128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58128 is a single 3.3-V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E 2PROM) organized as 528 bytes X 32 pages X 1024blocks.

TH58512FT

Contextual Info: TOSHIBA TH58512FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE 512-MBIT 64M X SILICON GATE CMOS 8 BITS CMOS NAND E2PROM DESCRIPTION The TH58512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes X 32 pages X 4096 blocks.

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

TC58V64FT

Abstract: TC58V64DC power generator control circuit schematic TC5832
Contextual Info: TOSHIBA TC58V64FT/DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

Contextual Info: TOSHIBA TENTATIVE TC5832DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC5832DC device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and Program mable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

TC58V64AFT

Abstract: toshiba NAND ID code hamming code 512 bytes cern1
Contextual Info: TOSHIBA TENTATIVE TC58V64AFT TO SH IBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64A is a single 3.3-V (54-Mbit (69,206,016) bit NAND Electrically Erasable and Programm able Read-Only Memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

Contextual Info: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

74AC

Abstract: TC74VHCT00A TC74VHCT00AF TC74VHCT00AFN TC74VHCT00AFT
Contextual Info: TOSHIBA TC74VHCT00AF/AFN/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT00AF, TC74VHCT00AFN, TC74VHCT00AFT QUAD 2 -INPUT NAND GATE The TC74VHCT00A is an advanced high speed CMOS 2INPUT NAND GATE fabricated with silicon gate C2MOS technology.

Contextual Info: TOSHIBA TC74VHCT00AF/AFN/AFT TOSHIBA CMO S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT00AF, TC74VHCT00AFN, TC74VHCT00AFT QUAD 2 -INPUT NAND GATE_ _ The TC74VHCT00A is an advanced high speed CMOS 2INPUT NAND GATE fabricated with silicon gate C2MOS

Contextual Info: TC74VHC132F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC132F,TC74VHC132FT,TC74VHC132FK Quad 2-Input Schmitt NAND Gate TC74VHC132F The TC74VHC132 is an advanced high speed CMOS 2-INPUT SCHMITT NAND GATE fabricated with silicon gate C2MOS

Contextual Info: TOSHIBA TC4011BP/BF/BFN/BFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4011BP, TC4011BF, TC4011BFN, TC4011BFT Note The JEDEC SOP (FN) is not available in TC4011B QUAD 2 INPUT NAND GATE Japan. The TC4011B is 2-input positive logic NAND gate

Contextual Info: TOSHIBA TC74VHC132F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC132F, TC74VHC132FN, TC74VHC132FS, TC74VHC132FT QUAD 2 -INPUT SCHMITT NAND GATE The TC74VHC132 is an advanced high speed CMOS 2-INPUT SCHMITT NAND GATE fabricated with silicon gate C2MOS

SAMSUNG MCP

Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Contextual Info: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6

Contextual Info: SN74LVC1G00 www.ti.com SCES212Y – APRIL 1999 – REVISED SEPTEMBER 2013 SINGLE 2-INPUT POSITIVE-NAND GATE Check for Samples: SN74LVC1G00 FEATURES DESCRIPTION • This single 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation. 1 2 •

SCHS145

Abstract: CD54HC132 CD54HC132F3A CD54HCT132 CD54HCT132F3A CD74HC132 CD74HCT132 HC132 HCT132
Contextual Info: [ /Title CD74 HC132 , CD74 HCT13 2 /Subject (High Speed CMOS Logic Quad 2-Input NAND Schmit CD54HC132, CD74HC132, CD54HCT132, CD74HCT132 Data sheet acquired from Harris Semiconductor SCHS145E High-Speed CMOS Logic Quad 2-Input NAND Schmitt Trigger August 1997 - Revised March 2004

TC74VHC00FS

Abstract: TC74VHC00FN TC74VHC00FT
Contextual Info: TOSHIBA TENTATIVE TC74V H COOF/FN/FS/FT TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC00F, TC74VHC00FN, TC74VHC00FS, TC74VHC00FT QUAD 2 -INPUT NAND GATE The TC74VHC00 is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

SCES099B

Abstract: SN74ALVC1G00
Contextual Info: SN74ALVC1G00 SINGLE 2-INPUT POSITIVE-NAND GATE SCES099B - JULY 1997 - REVISED JANUARY 1998 • EPIC Enhanced-Performance Implanted CMOS Submicron Process • Packaged in Plastic Small-Outline Transistor Package DCK PACKAGE (TOP VIEW) 'description This single 2-input positive-NAND gate

TC7WH00FU

Contextual Info: TOSHIBA TENTATIVE TC7WH00FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT UNDER DEVELOPMENT SILICON MONOLITHIC TC7WH00FU DUAL 2-INPUT NAND GATE The TC7WH00FU is an advanced high speed CMOS 2INPUT NAND GATE fabricated with silicon gate CMOS technology. It achieves the high speed operation similar

Contextual Info: TO SHIBA TC74VHC10F/FN/FS/FT TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC10F, TC74VHC10FN, TC74VHC10FS, TC74VHC10FT TRIPLE 3 -INPUT NAND GATE The TC74VHC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

Contextual Info: TO SHIBA TC4011BP/BF/BFN/BFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4011BP, TC4011BF, TC4011BFN, TC4011BFT Note The JEDEC SOP (FN) is not available ¡n TC4011B QUAD 2 INPUT NAND GATE Japan The TC4011B is 2-input positive logic NAND gate