NAND FLASH 512M Search Results

Contextual Info: MEMORY MODULE FLASH Nand 512Mx64-BGA Flash Nand Memory MODULE 3D FN32G64VB8263 32Gbit Flash Nand organized as 512Mx64, based on 512Mx8 Pin Assignment Top View BGA 119 (Pitch : 1.27 mm) Features - Organized as 512Mx64-bit based on 512Mx8-bit - Single +3.3  0.3V power supply

K9F2G08U0B-PCB0

Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
Contextual Info: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●

NAND512W3A 64MB

Abstract: STMicroelectronics NAND256W3A VFBGA63 NAND08GW3B USOP48 NAND256W3A F70 Package NAND01GW3B tfbga NAND01GR3B
Contextual Info: NAND Flash memories The core element of a compact audio-player is a NAND Flash, smaller than a stamp, which is capable of storing hours of audio files Because NAND Flash offers higher densities and performances at lower cost, it is ideal for multimedia system

3DFN16G08

Abstract: VS464
Contextual Info: MEMORY MODULE FLASH Nand 2Gx8-SOP Flash Memory MODULE 3DFN16G08VS4643 16Gbit Flash Nand organized as 2Gx8, based on 512MGx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase

NAND512W3A2C

Abstract: VFBGA63 ST MICROELECTRONICS FBGA63 NAND512R3A2C NAND512R4A2C NAND512W4A2C NAND512W3A2
Contextual Info: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface

MT29C2G24m

Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
Contextual Info: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package

intel MLC flash MD78

Abstract: intel nand flash intel nand slc Nand intel INTEL NAND FLASH MEMORY INTEL 8GB Nand flash "NAND Flash" intel 31637 intel MLC flash NAND
Contextual Info: Product Brief Intel NAND Flash Memory Intel® NAND Flash Memory A complete range of products meets diverse application requirements Enhance user experiences in a variety of applications with Intel® NAND Flash Memory. Single- and multi-level cell products in a broad range of densities deliver the right combination of capacity,

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

BGA 130 MCP NAND DDR

Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information

512MB NOR FLASH

Abstract: BFW transistors Diode Mark N10 MCP NOR FLASH SDRAM 137-Ball 66 ball nor flash JESD 95-1, SPP-010 NAND FLASH BGA S72WS256NDE S72WS256NEE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on

512MB NOR FLASH

Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Contextual Info: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2

bad block

Abstract: RAM 2112 256 word st marking BBM code AN1819 bad marking FLASH TRANSLATION LAYER FTL Flash Translation Layer NAND04 NAND01G-B NAND128-A
Contextual Info: AN1819 APPLICATION NOTE Bad Block Management in Single Level Cell NAND Flash Memories This Application Note explains how to recognize factory generated Bad Blocks, and to manage Bad Blocks that develop during the lifetime of the NAND Flash device. INTRODUCTION

MT29C4G48MAZAPAKQ-5

Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
Contextual Info: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

MT29F4G08ABA

Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
Contextual Info: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,

Contextual Info: HANBit HFDOM44S6Vxxx 44Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 1-bit ECC, x8 and x16 I/O, 1.8V VCC S34MS01G1, S34MS02G1, S34MS04G1 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 1.8V VCC S34MS01G2, S34MS02G2, S34MS04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G2, S34ML02G2, S34ML04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 1-bit ECC, x8 and x16 I/O, 1.8V VCC S34MS01G1, S34MS02G1, S34MS04G1 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion

THNCF128MMA

Abstract: THNCF512MMA cf 44 pin to ide 1.8 THNCF064MMA THNCF256MMA THNCF768MMA 44 pin ide to 40 pin ide
Contextual Info: THNCFxxxxMA Series Preliminary TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card DESCRIPTION The THNCFxxxxMA series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type 䋨Toshiba䋩 flash memory device. The

THNCF1G02DG

Abstract: thncf128mdg 400H THNCF256md SanDisk compactflash 256Mb THNCF256MDG 102GB THNCF512MDG
Contextual Info: THNCFxxxxDG Series TENTATIVE TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card Lead-Free DESCRIPTION The THNCFxxxxDG series CompactFlash™ card is a flash technology based on ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type flash memory device. The CompactFlash™ card

THNCF512MPG

Abstract: SanDisk compactflash 256Mb THNCF THNCF256MPG SANDISK 16bit THNCF4G09PG
Contextual Info: THNCFxxxxPG Series TENTATIVE TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card Lead-Free DESCRIPTION The THNCFxxxxPG series CompactFlash™ card is a flash technology based on ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type flash memory device. The CompactFlash™ card

SAMSUNG MCP

Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
Contextual Info: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1

K9K4G08U0M-YCB0

Abstract: K9K4G16U0M-YCB0 K9K4G16Q0M-YCB0 K9K4G08Q0M-YCB0 K9K4G08U0M
Contextual Info: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003