HYNIX HY27UH08AG5M
Abstract: HY27UH08AG5M hy27u*08ag5 hynix nand Hynix 16Gb Nand flash 16G nand HY27U*G5M hynix nand PROGRAMMING marking GG uLGA
Contextual Info: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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hy27uh08ag16gbithy27uh08ag5mhy27uh08agdm+9hynix hy27uh08ag5mhy27u*08ag5hynix nandhynix 16gb nand flash16g nandhy27u*g5mhynix nand programmingmarking ggulga
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HYNIX HY27UH08AG5M
Abstract: HY27UH08AG5M hynix nand spare area 16gb hy27u*08ag5 HY27UH08AGDM hynix nand flash Hynix 16Gb Nand flash
Contextual Info: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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hy27uh08ag16gbithy27uh08ag5mhy27uh08agdm+6hynix hy27uh08ag5mhynix nand spare area16gbhy27u*08ag5hynix nand flashhynix 16gb nand flash
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3DFN16G08
Abstract: VS464
Contextual Info: MEMORY MODULE FLASH Nand 2Gx8-SOP Flash Memory MODULE 3DFN16G08VS4643 16Gbit Flash Nand organized as 2Gx8, based on 512MGx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase
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3dfn16g08vs464316gbit512mgx8384km+33dfp-0643-rev3dfn16g08vs464
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Hynix 16Gb Nand flash
Abstract: HY27UH08AG marking code ADH 16G nand hy27u*08ag5 HY27UH08AG5M HY27UH08AGDM 16GB Nand flash HY27U*G5M 52TLGA
Contextual Info: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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hy27uh08ag16gbithy27uh08ag5mhy27uh08agdm+7hynix 16gb nand flashmarking code adh16g nandhy27u*08ag516gb nand flashhy27u*g5m52tlga
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Hynix 16Gb Nand flash
Abstract: hy27u*08ag5 HY27UH08AG5M HY27UH08AGDM 2gx8 HY27U*G5M hy27u*08ag5m
Contextual Info: Preliminary HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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hy27uh08ag16gbithy27uh08ag5mhy27uh08agdm+5hynix 16gb nand flashhy27u*08ag52gx8hy27u*g5mhy27u*08ag5m
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hy27u*08ag5
Abstract: HY27UH08AG5B Hynix 16Gb Nand flash hynix nand NAND FLASH 64MB reset nand flash HYNIX hynix nand edc spare area code hynix nand flash 1.8v 4Gb
Contextual Info: 1 HY27UH08AG5B Series 16Gbit 2Gx8bit NAND Flash 16Gb NAND FLASH HY27UH08AG5B This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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hy27uh08ag5b16gbithy27u*08ag5hynix 16gb nand flash+5hynix nandnand flash 64mbreset nand flash hynixhynix nand edc spare area codehynix nand flash 1.8v 4gb
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16GB Nand flash
Abstract: Hynix 16Gb Nand flash HY27UH08AG hy27u*08ag5 16G nand HY27UH08AG5M HY27UH08AGDM nand flash 16gb HY27U hynix nand 16gb
Contextual Info: HY27UH08AG 5/D M Series 16Gbit (2Gx8bit) NAND Flash 16Gb NAND FLASH HY27UH08AG5M HY27UH08AGDM This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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hy27uh08ag16gbithy27uh08ag5mhy27uh08agdm+716gb nand flashhynix 16gb nand flashhy27u*08ag516g nandnand flash 16gbhy27uhynix nand 16gb
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JESD97
Abstract: NAND04G-B2D TSOP48 outline
Contextual Info: NAND16GW3B4D 16-Gbit 4 x 4 Gbits , two Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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nand16gw3b4d16-gbit2112-bytetsop48+3jesd97nand04g-b2dtsop48 outline
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JESD97
Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
Contextual Info: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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nand16gw3c4b16-gbit2112-bytejesd97+2nand08gw3c2b16gbit
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toshiba emmc 4.4
Abstract: toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga
Contextual Info: 2008-9 SYSTEM CATALOG Mobile Solutions s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Semiconductor Devices for Mobile Applications Mobile communications via cellular phones and PDAs are changing the way we live.
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sce0008ge-28831sce0008htoshiba emmc 4.4+9toshiba 8gb nand flash emmctoshiba emmctoshiba 16gb nand flash emmctcm9000mdtcm9200mdtoshiba emmc catalogtc35893xbgrgb to mipi dsi lcdtoshiba 8gb nand flash bga
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K9WBG08U1M
Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
Contextual Info: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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k9wbg08u1mk9kag08u0mk9ncg08u5mk9xxg08xxm+8100nsk9wbg08u1m-pcb0k9ncg08u5m-pcb0samsung k9ncg08u5mk9f8g08u0mk9kag08u0m-pcb0k9wbg08k9kag08u0m-p
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PF38F4050L0ZTQ0
Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit
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l18/l30768-mbit256-mbit64-mbit+1016-mbitpf38f4050l0ztq0pf38f3040numonyx 106 ballrd38f4455pf48f4400l0rd38f40pf38f4050numonyx 107-ballnumonyx strataflash m18
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C7478
Contextual Info: NAND08GW3F2B 8-Gbit, 4224-byte page, 3 V supply, multiplane architecture, single level cell NAND flash memory Preliminary Data Features • High density single level cell SLC flash memory – 8 Gbits of memory array – Cost-effective solutions for mass storage
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nand08gw3f2b4224-bytec7478 |
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NAND16GW3F4A
Abstract: 16G nand
Contextual Info: NAND16GW3F4A 16-Gbit 2 x 8 Gbits , two Chip Enable, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage
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nand16gw3f4a16-gbit4224-byte16g nand |
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LGA52
Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
Contextual Info: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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nand08gw3c2bnand16gw3c4btsop48lga52+6lga-52ulga52nand 16g16g nand flashnand16gw3nand16gw3c4a
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Stacked 4MB NOR FLASH & SRAM with AD multiplexed
Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
Contextual Info: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed
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x32shx16sbx16/x32stacked 4mb nor flash & sram with ad multiplexed+5flash memory 38fflash memory 48fnumonyx admux48f4400numonyx 106 ball
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256l18
Abstract: 256l30 sar106 1024Mbit 1024-Mbit PF48F 298132 PBA 16-10
Contextual Info: Intel StrataFlash£ Wireless Memory System LV18/LV30 SCSP 1024-Mbit LV Family Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration Device Voltage — Core: VCC = 1.8 V (Typ)
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lv18/lv301024-mbit256-mbit16-kword+1264-kword38f/48f32-mbit64-mbit128-mbit256l18256l30sar1061024mbitpf48f298132pba 16-10
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S34MS04G200
Abstract: S34MS04G2 S34MS01G200 63-BGA S34MS01G204 S34MS01G2 Spansion NAND Flash DIE S34MS04G204
Contextual Info: Spansion SLC NAND Flash Memory for Embedded 1 Gb, 4 Gb Densities: 4-bit ECC, x8 and x16 I/O, 1.8V VCC S34MS01G2, S34MS04G2 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion
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s34ms01g2s34ms04g2s34ms04g200s34ms01g200+463-bgas34ms01g204spansion nand flash dies34ms04g204
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NAND16GW3D2A
Abstract: C5761 2112B
Contextual Info: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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nand16gw3d2a16-gbit4224-bytec5761+12112b
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RD38F4
Abstract: 1024-Mbit rd58f0012lvybb0 30094* intel
Contextual Info: Intel StrataFlash Wireless Memory System LV18 SCSP 1024-Mbit LVX Family with LPSDRAM Datasheet Product Features • ■ ■ ■ ■ ■ Device Memory Architecture — Flash die density: 128-, 256-Mbit — LPSDRAM die density: 128-, 256-Mbit — Top or Bottom parameter flash
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1024-mbit256-mbit16-kword64-kword+6128-mbit32-mbit64-mbitrd38f4rd58f0012lvybb030094* intel
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AF9710
Abstract: sanyo denki super mini AG9730 Micro CCD Cable RENESAS marking code FOR MICRO BGA AF9723 GANG PROGRAMMER panasonic jig serial cable AF9723B-AF9845 AF9723 user manual 2716 eprom manual programming by switch
Contextual Info: & Quick Flexible Product Catalog for Device Programmers Contact Information •Supported devices Supported devices are found in the device list and device search in our website. As for the latest devices or devices not listed in the device list, we will support them on a request basis. For more information, contact our technical support below.
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af9710sanyo denki super miniag9730micro ccd cable+6renesas marking code for micro bgaaf9723 gang programmerpanasonic jig serial cableaf9723b-af9845af9723 user manual2716 eprom manual programming by switch
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Numonyx admux
Abstract: PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h
Contextual Info: Numonyx Wireless Flash Memory W18 SCSP 128-Mbit W18 Family with Synchronous PSRAM Datasheet Product Features Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option
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128-mbit32-mbitx32shx16sb+11x16/x32numonyx admuxpf38f2030w0ytqenumonyx 106 ballpsramtba 931pf38f20304400p0x16cnor flash aaddie000000h
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FLASH MEMORY 38F
Abstract: 128M NAND Flash Memory 8857H 28F128W30 28F320W30 28F640W30 48F4400 numonyx 106 ball Numonyx Embedded Flash Memory strataflash 512mbit
Contextual Info: Numonyx Wireless Flash Memory W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed
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28f640w3028f320w3028f128w30x32sh+9x16sbx16/x32flash memory 38f128m nand flash memory8857h48f4400numonyx 106 ballnumonyx embedded flash memorystrataflash 512mbit
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LGA52
Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
Contextual Info: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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nand08gw3c2anand16gw3c4alga52lga-52+416g nandjesd97nand16gw3ns4258
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