NA SMD Search Results

7B SMD

Contextual Info: Surface Mount SMD Packaging Reel and Carrier Tape Specifications MINIMUM PACKING QUANTITY DFN Series (Notes 4) DFN0806 DFN0808 Bulk Type Quantity NA NA NA DFN1006 NA DFN1010 NA DFN1409, DFN1410 DFN/QFN3030 (Note 5) DFN4030-12 DFN4030-12 Type B, C, D NA NA

Po-50

Abstract: llp-8 smd 13w LM4892 LM4893 LM4897 LM4898 LM4900 LM4901 LM4902
Contextual Info: ᕽᨥ ᕉ᩶ LM4892 LM4893 LM4897 LM4898 LM4900 LM4901 LM4902 LM4903 LM4904 LM4905 LM4906 LM4907 LM4916 LM4923 LM4951 LM4990 7+' ᜦᘘឪᣟᑗ៟ᑗ VCC=3.3V VCC=5V 8Ω 4Ω 4Ω 8Ω 8Ω 0.2W NA 0.4W NA 0.9W 0.25W NA 0.35W NA 1.1W 0.25W NA 0.35W NA

smd SOT26

Abstract: AP02007 ao sot-353 smd diode sot-89 marking code sc SOT89 smd marking 13 transistor smd marking code 3l MSOP-10L TSSOP-14L smd part marking b1 sot
Contextual Info: Surface Mount SMD Packaging Reel and Carrier Tape Specifications MINIMUM PACKING QUANTITY 7" Tape and Reel 13" Tape and Reel PACKAGE TYPE Bulk Tube Quantity Quantity Part Number Suffix Quantity Part Number Suffix DFN Series NA 3K -7 10K -13 DF-S 50 NA NA

m43g smd

Abstract: RM84 RM85 RM87 RM87N RM960 RMB962 M43G N-624 PW80
Contextual Info: Opcje montażu przekaźników 179 Na płytkach obwodów drukowanych PRZEKAŹNIKI Na płytach montażowych Na szynach 35 mm wg EN 50022 Obudowa z uchwytami montażowymi - montaż na płytach Połączenie wsuwkowe konektorowe RM84 bezpośrednio z gniazdem

1206 di

Abstract: SSO-PDQ-0.25-5
Contextual Info: SSO-PDQ-0.25-5 SMD SMD-PIN Photodiode Special characteristics: Small SMD 1206 package High Speed epitaxy Low Dark current 0,25 mm² active area Parameters: Package SMD 1206: 2 Active area 0,25 mm 0,5 x 0,5 Dark current @ UR = 20V max. 4 nA typ. 0,5 nA Total capacitance

LM293

Contextual Info: Integrate Circuit SMD Type Low Power Low Offset Voltage Dual Comparators LM293 Features Wide Single-Supply Range: 2.0 V to 36 V Split-Supply Range: 1.0 V to 18 V Very Low Current Drain Independent of Supply Voltage: 0.4 mA Low Input Bias Current: 25 nA Low Input Offset Current: 5.0 nA

LM393

Contextual Info: Integrate Circuit SMD Type Low Power Low Offset Voltage Dual Comparators LM393 Features Wide Single-Supply Range: 2.0 V to 36 V Split-Supply Range: 1.0 V to 18 V Very Low Current Drain Independent of Supply Voltage: 0.4 mA Low Input Bias Current: 25 nA Low Input Offset Current: 5.0 nA

sensor alcohol

Abstract: lx 5700 DL-100-7-KER
Contextual Info: DL-100-7-KER SMD Position Sensing Photodiodes Special characteristics: dual-axis, duo-lateral PSD active area 10 x 10 mm high position resolution and high linearity 10 x 10 mm 100 mm2 max. 300 nA typ. 80 nA chip surface typ. 75 pF typ. 0,4 A/W typ. 0,62 A/W

Contextual Info: Lattice GAL20V8A/883 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 15 na Maximum Propagation Delay — Fmax - 50 MHz — 12 na Maximum from Clock Input to Data Output — TTL Compatible 24 mA Output*

bt239

Contextual Info: + U1 & Na t i o na l Semiconductor > 00 O 54ABT16500 18-Bit Universal Bus Transceivers with TRI-STATE Outputs General Description These 18-bit universal bus transceivers combine D-type latches and D-type flip-flops to allow data flow in transparent, latched, and clocked modes.

MSP430F5438IPZ

Abstract: QCT32768 SMD PJ 77
Contextual Info: USB C43 100nF C44+ 10uF/6.3V/T ANT NA C48 NA P_OUT HN1x2 2 1 2 1 #LCD_RES EXT1-28 A_OUT MSP430F5438IPZ P8.7 P8.6/TA1.1 P8.5/TA1.0 P8.4/TA0.4 P8.3/TA0.3 P8.2/TA0.2 P8.1/TA0.1 P8.0/TA0.0 P9.7 P9.6 P9.5/UCA2RXD/UCA2SOMI P9.4/UCA2TXD/UCA2SIMO P9.3/UCB2CLK/UCA2STE

Contextual Info: RFM24W RFM24W ISM Transceiver module V 1.1 Features XOUT XIN RFM24W GND Low BOM Temperature Sensor GPIO2 Ultra low current powerdown modes 30 nA shutdown, 50 nA standby Data rate = 0.123 kbps to 1Mbps Fast wake and hop times Power supply = 1.8 to 3.6 V Excellent selectivity performance

40 MHZ OSCILLATOR

Contextual Info: CARDINAL COMPONENTS NEW OSCILLATORS SECTION Pr eli mi na ry CCE2C . 2 CCE3E . 5 CCE4C . 8 CCE4E . 11

Contextual Info: + CJ1 U i & Na t i o na l Semiconductor > CD CJ1 cn O I CD S eparate control logic fo r each byte The ’ABT16245 contains sixteen non-inverting bidirectional buffers with TRI-STATE outputs and is intended fo r bus ori­ ented applications. The device is byte controlled. Each byte

SMD DC isolation transformer

Abstract: MAX253 MAX845 TGM-340NA TGM-410NF TGM-450NF tgm350na TGM-330NA SMD DIL OSCILLATOR FULL WAVE RECTIFIER CIRCUITS diagram
Contextual Info: The TGM-NA and TDM-NA, reinforced insulation, 6 pin transformers provide the isolation and voltage outputs required for low cost DC/DC converter circuits. UL1950, IEC950 and EN60950 recognized. Designed specifically for use with the Maxim MAX253 and MAX845 monolithic oscillator/power drivers with 3.3V or 5V power source. Other packages are available with isolation voltages ranging from 500 to 4.5KVrms. For more

TGM-340NA

Abstract: TGM-350NA SMD DC isolation transformer TGM-340NARL TGM-410NF TGM-380NA TGM-440NFRL TGM-410NFRL TGM-420NF TGM 240NSRL
Contextual Info: HThe TGM-NA and TDM-NA, reinforced insulation, 6 pin transformers provide the isolation and voltage outputs required for low cost DC/DC converter circuits. UL1950, IEC950 and EN60950 recognized. Designed specifically for use with the Maxim MAX253 and MAX845 monolithic oscillator/power drivers with 3.3V or 5V power source. Other packages are available with isolation voltages ranging from 500 to 4.5KVrms. For more

BAS716

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product specification 2003 Nov 07 Philips Semiconductors Product specification Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN
 • Low leakage current: typ. 0.2 nA

crystal oscillator smd

Abstract: CSX252T csx-252 38.4MHZ
Contextual Info: TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR SMD • Ceramic Package CSX-252T RoHS Compliant Standard ry •FEATURES na imi l Pre 2000pcs/reel 7High-density SMD type. 7Ultra-light weight and ultraminiature size. 7Automatic mounting and reflowable Type. 7Low supply current.

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs

10304BPA

Contextual Info: Voltage Comparator AS111 Voltage Comparator PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-86877 • M38510/10304B • MIL-STD-883, 1.2.1 8 Pin Ceramic DIP (C008) FEATURES • Operates from single 5V supply • Input current: 150 nA max. over temperature

AS111

Abstract: 10304BPA 10304BCA M38510/10304BCA
Contextual Info: Voltage Comparator AS111 Voltage Comparator PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-86877 • M38510/10304B • MIL-STD-883, 1.2.1 8 Pin Ceramic DIP (C008) FEATURES • Operates from single 5V supply • Input current: 150 nA max. over temperature

BAS716

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs

BAS716

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs

Contextual Info: Antenna Duplexers Series Y Antenna Duplexers (SMD) (For Cordless Telephones) Y Series: NA (TX: 2 Poles, RX: 2 Poles) NB (TX: 2 Poles, RX: 2 Poles) Type: Antenna Duplexers, Series Y (SMD) consisting of two different dielectric filter units for a transmitter and a