N914 Search Results

Contextual Info: 3QE D • ?12*ï237 00310^3 fi ■ T - ^ S 'O ^ SGS-THOMSON a n S G [M D m m ig ïïM D O Û S 2 N914 S-TH0MS0N SATURATED LOGIC SWITCH AND VHF AMPLIFIER DESCRIPTION The N914 is a silicon planar epitaxial NPN transis­ tor in Jedec TO-18 metal case. It is primarily a uni­

DN914

Contextual Info: 1.4-inch 36 mm 5 x 8 Dot Matrix LED Display D-N914, D-K914, DEGK914 and DEGN/K9141 Series wdea The 1.4-inch 5 x 8 dot matrix is designed for applications where multiple rows of alphanumeric information must be displayed. It can also be arranged in 16-row groups for displaying Chinese characters and in larger formats for graphics.

1N414 diode

Abstract: 1N414 1N4148.1N4448 J 1N4448 equivalent
Contextual Info: 1N4148.1N4448 VISHAY _ ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N414 8 - 1 N914 1 N 44 48- N914B Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter

Diodes 1n 4148

Contextual Info: VfSMAY _ 1N4148.1N4448 ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N 4148 - 1 N 914 1N4448 - 1 N914B Applications 94 9367 Extrem e fa st sw itches Absolute Maximum Ratings Tj = 2 5 °C

1N91 diode

Abstract: 1N91 N914A 1N914 1N914A 1N914B SC-40 1N914b diode 13A1A
Contextual Info: TOSHIBA {DISCRET E/ OPT O} b7 9097250 T O S H IBA DISCRETE/OPTO N914,1 N914A, N914B De I ^ O T O S D . ^ OODTSflS 7 D T-o^-o . 67C 09285 S ilico n E p it a x ia l- P la n a r T y p e D iode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS.

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964

Contextual Info: CAT28C17A 16K-Bit CMOS E2PROM FEATURES Fast Read Access Times: 200 ns End of Write Detection: -D A T A Polling -R D Y /B D S Y Pin Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 100 jiA Max. Hardware Write Protection Simple Write Operation:

Contextual Info: CAT28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

Contextual Info: B ' i c i L _ Y s ~ r Preliminary CAT28F001 L icen sed In tel second source 1 Megabit CMOS Boot Block Flash Memory FEATURES • Deep Powerdown Mode — 0.05 |xA lcc Typical — 0.8 jiA lpp Typical ■ Hardware Data Protection ■ Electronic Signature ■ 100,000 Program/Erase Cycles and 10 Year

R4R7

Abstract: LM148D
Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm LM148 L o w P o w e r Q u a d 741 O p e r a t i o n a l A m p l i f i e r Features Description • • • • • • • • • • The LM148 is a true quad 741. It consists of four

Contextual Info: C A T 28 C 17A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Tim es: 200 ns ■ ■ Low Power CMOS Dissipation: -A c tiv e : 25 mA Max. -S ta n d b y: 100 jiA Max. End o f Write Detection: -D A T A 'P olling -R D Y /B S T Pin ■ Hardware Write Protection

Contextual Info: SGS-TtiOMSON MK50H28 • U K ê T IM M Ê i MULTI LOGICAL LINK FRAME RELAY CONTROLLER SECTION 1 - FEATURES ■ Based on ITU Q.933 Annex A and T1.617 An­ nex D Standards for Frame Relay Service and Additional Pocedures for Permanent Virtual Circuits PVCs .

CAT28C16A

Abstract: 28C16A CAT28C16ANI-20T MS-013
Contextual Info: C AT28C 16A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: -A c tiv e : 25 mA Max. -S ta n d b y: 100 fiA Max. ■ Hardware Write Protection ■ CMOS and TTL Compatible I/O

ds130 diode

Abstract: ds130 diode 1N4148 SMD diode array SMD DIODE 1N4148 PACKAGE dual diode 1N4148 SMD DS-130 DS1185 smd diode arrays DS1103
Contextual Info: DS130 thru DS1185 Equivalent To: MMAD130 thru MMAD1185 I n te r n a t/ onal S e m ic o n d u c t o r , I n c . SURFACE MOUNT DIODE DIP ARRAYS ISI Part # Motorola Part # Circuit Package DS130 M M AD130 1 S M B D 2-7 D S 1 103 M M A D 11 03 2 S M B D 2-7 D S 1 104

28C17A

Abstract: CAT28C17A CAT28C17ANI-20T
Contextual Info: CAT28C 17A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: -D A TA'Polling -R D Y /B S T Pin ■ Low Power CMOS Dissipation: -Active: 25 mA Max. -Standby: 100 jiA Max. ■ Hardware Write Protection ■ Simple Write Operation:

diode t 4148

Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND

NE5018

Abstract: SE5018 8085 philips 5019N
Contextual Info: TSt-09-09 Philips Sem iconductors-Signeties Linear Products 8-Bit |xp-compatible D/A converter NE/SE5018/5019 5DE D NAPC/ SIGNETICS oobvoos q m s i c i PIN CONFIGURATIONS DESCRIPTION FEATURES The NE/SE5018/19 is a complete 8-bit digital-to-anaiog converter subsystem on one

Contextual Info: N914 THRU FORWARD INTERNATIONAL ELECTRONICS LTD. SEM ICO N D U CTO R 4^ 43 TECHNICAL DATA_ TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES ' ‘ *

LFTP

Abstract: NE5018 ref500
Contextual Info: Philips Sem lconductors-Signetics Linear Products Product specification 8-Bit ¡ip-eompatible D/A converter NE/SE5018/5019 PIN CONFIGURATIONS DESCRIPTION FEATURES The N E /S E 5018/19isacom plete 8-bit digital-to-analog converter subsystem on one monolithic chip. The data inputs have input

Contextual Info: ÌCM7170 HARRIS S E M I C O N D U C T O R |iP-Compatible, Real-Time Clock A pril 1997 Features Description • 8-Bit, |^P Bus Com patible T he IC M 7170 real tim e clo ck is a m icro p ro ce sso r bus com p atib le peripheral, fab ricated using H a rris’ silicon gate

RESISTOR NETWORK SMD 8 PIN array isolated 2512

Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
Contextual Info: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011

Contextual Info: Æ 7 SCS-THOMSON ^ 7 # M28F201 [iD ê œ iL K g ^ O iQ ig i CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100p.A Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

1N914

Abstract: N914A N914B 1N914B 1N914-1
Contextual Info: N914 / N914A / N914B FAST SWITCHING DIODE Features Fast Switching Speed High Reliability High Conductance For General Purpose Switching Applications T D Mechanical Data_ • • • • DO-35 Case: D O -35, Glass Terminals: Solderable per M IL-STD-202,

N4003

Abstract: BELLCORE FSK ZF steering GR-30-CORE MT88E43B MT88E43BE MT88E43BS SIN227 1N40032 tda 2222
Contextual Info: SEMICONDUCTOR CMOS MT88E43B Extended Voltage Calling Number Preliminary Information Identification Circuit 2 Features D S 5 1 5 7 _ IS S U E 1_ A p ril 1 9 9 9 • Ordering Information MT88E43BE 24 Pin Plastic DIP