DS1105 Search Results

DS110505

Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB

Contextual Info: RF2483 RF2483Low Noise DualBand Quadrature Modulator with AGC LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC       RF OUT LB GC Mode Control & Biasing VCC2 2 * 15 GC DEC Power Control 14 VREF  ISIG P 3 13 QSIG P ISIG N 4 12 QSIG N +45°

Contextual Info: RF5570 RF5570 11b/g/n WiFi SP3T Switch 11b/g/n WiFi SP3T SWITCH Package: DFN, 8-Pin, 2.0mmx2.0mmx0.6mm Features    SP3T Switch Switch Control Voltage 2.5V to 5V Low Insertion Loss 0.6dB ANT 1 8 N/C 2 7 VRF3 VRF1 3 6 VRF2 RF3 Applications   EEE802.11b/g/n WiFi Applications

Contextual Info: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance

schematic diagram power amplifier free

Abstract: GRM155R61A105
Contextual Info: RFVA2017 RFVA2017Analog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mmx7mm VCTRL 8 Features Applications     Cellular, 3G and 4G Infrastructure WiBro, WiMax, LTE Microwave Radio High Linearity Power Control

SA2013-410

Abstract: rfsa2023 RFSA2023PCK-410 MICROWAVE BJT 2GHZ sa2013 Emerson 142-0741-851
Contextual Info: RFSA2023 RFSA2023 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 4000MHz Frequency Range 30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical 12 GND 11 NC VDD VC GND 10 RFOUT 4 9 7 NC 8 GND 6 GND 3.3V Power Supply

Contextual Info: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB

st micro trace date code

Contextual Info: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000MHz to 2800MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz GND GND GND GND GND NC 27 26 25 24 23 22 SPI_CLK 3 19 GND PUP 4 18 GND 17 GND 16 RF_OUT 15 GND DSA AMP2 6 GND 7 Gain Control Range=31.5dB

RFSA2013TR13

Abstract: RMC1/16S-101JTH
Contextual Info: RFSA2013 RFSA2013 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 4000MHz Frequency Range 30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical NC 4 12 GND 11 NC VDD VC GND 10 RFOUT 9 7 NC 8 GND 6 GND

NDK ENA3523A

Abstract: ENA3523A NDK ENA3560A
Contextual Info: RFMD2081 45MHz to 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO RFMD2081 Preliminary 45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO Package: QFN, 32-Pin, 5mm x 5mm Features         RF Output Frequency Range 45MHz to 2700MHz Fractional-N Synthesizer with

Contextual Info: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB

RFSW2042DC

Contextual Info: RFSW2042 RFSW2042DC TO 15GHz SP3T PHEMT GaAs SWITCH DC TO 15GHz SP3T PHEMT GaAs SWITCH Package: QFN, 16-pin, 0.8mmx4mmx4mm GND 6 Features  Low Insertion Loss: 2.1dB at 15GHz  High Isolation: 37dB at 15GHz  Excellent Return Loss  21nS Switching Speed

Contextual Info: RF7176D RF7176DDualBand TX/DualBand RX GSM/GPRS DUAL-BAND TX/DUAL-BAND RX GSM/GPRS TRANSMIT MODULE Integrated VBATT Tracking Circuit  8kV Robust ESD Protection at Antenna Port  No External Routing  Low RX Insertion Loss  Symmetrical RX Ports 

RF7176

Abstract: GPRS CIRCUIT DIAGRAM GSM module circuit diagram RF7176D Bluetooth circuit Rx
Contextual Info: RF7176D RF7176DDualBand TX/DualBand RX GSM/GPRS DUAL-BAND TX/DUAL-BAND RX GSM/GPRS TRANSMIT MODULE No External Routing  Low RX Insertion Loss  Symmetrical RX Ports      GPCTRL0 GPCTRL1 VBATT NC CMOS Controller 16 GND RFIN HB 3 15 GND GND 4

KEYFOB

Abstract: block diagram for FM radio transmitter AND RECEIVER TX RX FM transmitter 433.92 433a 110C2-433A keeloq rx decoder HiRK-433A 110c3-433a AM-433 AM-433MHz
Contextual Info: AM / FM RADIO TRANSMITTER KEYFOBS • • • • • • • • • Highly Secure Protocol 1 – 3 Switch Options Led Indication Of Transmission Directly Compatible With Keeloq Decoder Power Saving Auto Shut Off Feature Automatically Transmits Battery Low Condition.

Contextual Info: RFVC1829 RFVC1829Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       6.8 to 7.4GHz Operation -103dBc/Hz Phase Noise @ 100KHz offset +12.0dBm POUT No external resonator or

SBB5089Z

Abstract: SBB-5089Z BB5Z SBB5089ZSQ 0805CS DS110505 trace code marking RFMD
Contextual Info: SBB5089Z SBB5089Z 50MHz to 6000MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50MHz to 6000MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBB5089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active

Contextual Info: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance

NDK ENA3523A

Abstract: ENA3560A ENA3523A NDK ENA3560A RFMD2080SR Synthesizer VCO 250 to 1300MHz 52MHZ NDK RFMD2080SQ rfmd2080 ndk crystal oscillator 1400
Contextual Info: RFMD2080 45 MHz to 2700MHz IQ MODULATOR WITH RFMD2080 Preliminary 45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO & BASEBAND INTERFACE Package: QFN, 32-Pin, 5mm x 5mm Features          RF Output Frequency Range 45MHz to 2700MHz

RF3225

Abstract: mobile phone antenna RF3225TR polar modulation
Contextual Info: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features  EDGE Large Signal Polar Modulation Compatible  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%

x-Band Hemt Amplifier

Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Contextual Info: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V

GMSK applications

Abstract: RF3194
Contextual Info: RF3194 RF3194QuadBand GMSK power amp module QUAD-BAND GMSK POWER AMP MODULE Package: Module, 5.00mmx5.00mmx1.00mm Features  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%  DCS1800 Efficiency: 49%  PCS1900 Efficiency: 51%

bifet differential

Abstract: PHEMT* Noise Amplifier with Bypass Switch
Contextual Info: RF6555 Preliminary 3.3V, 2.4GHz FRONT END MODULE Package Style: QFN, 24-Pin Laminate 5mmx5mmx1mm Features   TX Output Power=18dBm TX Gain: 25dB Applications   ZigBee 802.15.4 Based Systems for Remote Monitoring and Control WLAN 802.11b/g Functional Block Diagram