N9 S2 MARKING DIODE Search Results

Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2601NZ

Abstract: FDW2601NZ 2601N
Contextual Info: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

n mosfet pspice parameters

Abstract: FDW2512NZ 2512nz
Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

5e8 marking

Abstract: 66E-3
Contextual Info: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2511NZ

Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features  8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDW2512NZ

Abstract: KP198
Contextual Info: May 2008 FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDW2601NZ

Abstract: N-Channel 2.5V 2601NZ
Contextual Info: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2601NZ

Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
Contextual Info: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: FDW2517NZ Dual N-Channel 2.5V Specified Trench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching

Contextual Info: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2511NZ

Abstract: m068 BV150 FDW2511NZ n10 diode 51E3 KP17 Diode N7 S2
Contextual Info: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDS8878

Abstract: FDS8978
Contextual Info: FDS8978 N-Channel PowerTrench MOSFET tm 30V, 7.5A, 18mΩ Features General Description „ rDS on = 18mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDS8978 N-Channel PowerTrench MOSFET 30V, 7.5A, 18mΩ Features General Description ̈ rDS on = 18mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

FDS8878

Abstract: FDS8978 fds897
Contextual Info: FDS8978 N-Channel PowerTrench MOSFET 30V, 7.5A, 18mΩ Features General Description „ rDS on = 18mΩ, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

turck 8 pin m12 connector

Abstract: OMRON RM201 marking code A1W SMC ex250 AN203 MATSUSHITA MATSUA compressor wiring diagram frc100a solenoid valve 24v JIS-X-5101 eb142
Contextual Info: CAT.ES11-81 A 5 Port Solenoid Valve Series SV New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides flexibility when adding stations or changing manifold configuration.

B1583

Abstract: xilinx xcr3512xl DS012 DS023 FG324 FT256 PQ208 XCR3512XL P12 MARKING DIODE cpld table
Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.7 February 13, 2004 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide

Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.6 September 23, 2003 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide

Contextual Info: R XCR3512XL: 512 Macrocell CPLD DS081 v1.8 January 5, 2005 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide

XCR3384XL-10TQ144C

Abstract: FT256 t11 2581 DS012 DS023 FG324 PQ208 TQ144 XCR3384XL DS024
Contextual Info: R XCR3384XL: 384 Macrocell CPLD DS024 v1.8 February 13, 2004 14 Preliminary Product Specification Features Description • • • • • The XCR3384XL is a 3.3V, 384 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 24 function blocks provide

Contextual Info: R XCR3384XL: 384 Macrocell CPLD DS024 v1.7 August 21, 2003 14 Preliminary Product Specification Features Description • • • • • The XCR3384XL is a 3.3V, 384 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 24 function blocks provide

XCR3384XL-10TQG144C

Abstract: marking W17 diode XCR3384XL-12PQG208C XCR3384XL-10PQG208C FG324 FT256 PQ208 TQ144 DS012 DS023
Contextual Info: XCR3384XL: 384 Macrocell CPLD R DS024 v2.0 March 31, 2006 14 Product Specification Features Description • • • • • The CoolRunner XPLA3 XCR3384XL device is a 3.3V, 384 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A