2601N Search Results

78008

Contextual Info: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D 2601N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Rückwärts-Spitzensperrspannung Kenndaten repetitive peak reverse voltages

2601NH

Abstract: T 7224 Diode 78 DIOD
Contextual Info: Datenblatt / Data sheet SH Puls Po wer Diod e Pulse Po wer Diode D 2601NH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

78 DIOD

Abstract: p j 85 diod
Contextual Info: Datenblatt / Data sheet SH Puls Po wer Diod e Pulse Po wer Diode D 2601NH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

DI 944

Contextual Info: N Datenblatt / Data sheet Netz-Gleichrichterdiode Rectifier Diode D 2601N Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

"Power Diode"

Abstract: power diode 2601NH 78008
Contextual Info: SH Datenblatt / Data sheet Puls Power Diode Pulse Power Diode D 2601NH Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Rückwärts-Spitzensperrspannung Kenndaten repetitive peak reverse voltages

"Power Diode"

Abstract: power diode 2601NH 76DNH90 11029 diode
Contextual Info: SH Datenblatt / Data sheet Puls Power Diode Pulse Power Diode D 2601NH Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Rückwärts-Spitzensperrspannung Kenndaten repetitive peak reverse voltages

Contextual Info: N Datenblatt / Data sheet Netz-Gleichrichterdiode Rectifier Diode D 2601N Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak reverse voltages

RECTIFIER DIODE 1000A

Abstract: 2601N
Contextual Info: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D 2601N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Rückwärts-Spitzensperrspannung Kenndaten repetitive peak reverse voltages

"Power Diode"

Abstract: power diode 78008 k 2645 2601NH k 2645 data sheet K 2645 transistor 00427 data sheet power diode Puls
Contextual Info: SH Datenblatt / Data sheet Puls Power Diode Pulse Power Diode D 2601NH Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Rückwärts-Spitzensperrspannung Kenndaten repetitive peak reverse voltages

g2501

Abstract: ntba transistor marking N1 B82791-G2251-N20 G2301 B82791-H2301-N1 B82791-H2401-N1 electronic transformer halogen B82791-H2251-N20 marking n20
Contextual Info: Chokes for Power Lines B82791-H Current-Compensated Ring Core Double Chokes B82791-G Rated voltage 250 Vac Rated current 0,25 to 0,7 A Rated inductance 4,7 to 47 mH Construction • Current-compensated ring core double choke with ferrite core ■ Polycarbonate case

2601NZ

Abstract: FDW2601NZ 2601N
Contextual Info: 2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

A2601

Abstract: K2601 k2202 B82720-A2601-N40 B82720-A2301-N40 k2301 B82720-A B82720-A2102-N40 B82720-A2202-N40 B82720-K
Contextual Info: Chokes for Power Lines B82720-A Current-Compensated Ring Core Double Chokes B82720-K Rated voltage 250 Vac Rated current 0,3 to 2,0 A Rated inductance 1,1 to 12 mH Construction • Current-compensated ring core double choke with ferrite core ■ Polycarbonate case

Contextual Info: Attenuators - N Type - Fixed Coaxial MIL-A-3933/18 M ILITAR Y PART NO. - 21 -22 -23 -24 M IDW EST PA R T NO. FREQUENCY RANG E GHz ATTEN U ATIO N V A LU E (dB ) M 3933/18-21N - M 3933/18-22N M 3933/18-23N M3933/18-24N 3 6 10 20 D C -1 8 .0 DC - 18.0 DC - 18.0

DS13

Abstract: 10-30N k 4110 DS30 DS10 DS11 DS12 DS14 DS16 DS18
Contextual Info: Click on outline no. Rectifier Diodes Type IFSM ∫i²dt IFAVM/tc kA A²s 10ms, Tvj max A/°C 10 ms, Tvj max *10³ 400 400 710 1195 4000 7000 9100 9100 12600 5 4 5 9 29 52 70 70 90 105,8 80 130 387,2 4061 13500 24500 24500 40000 255/110 255/ 75 450/122 760/115

2601NZ

Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
Contextual Info: 2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

5e8 marking

Abstract: 66E-3
Contextual Info: 2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

B82720-K2601-N40

Abstract: B82720-A2102-N40 SIEMENS K CORE
Contextual Info: EMC Components Chokes for Power Lines Current-Compensated Ring Core Double Chokes B82720-A/-K Data Book Supplement Power Line Chokes Current-Compensated Ring Core Double Chokes B82720-A B82720-K Rated voltage 250 Vac Rated current 0,3 bis 2,0 A Rated inductance 1,1 bis 12 mH

Contextual Info: Attenuators - N Type - Fixed Coaxial MIL-A-3933/18 TYPE N TYPE N JACK 1 .7 7 4 5 .0 M IL IT A R Y M ID W E S T PART NO. PART NO. -2 1 -2 2 -2 3 -2 4 A T T E N U A T IO N V A L U E (d B ) 3 6 10 20 M3933/18-21N M3933/18-22N M3933/18-23N M3933/18-24N FREQUENCY

1099-N

Abstract: T2101 t1189n
Contextual Info: Phase control thyristors Type V drm It r m s m It s m /¡2dt It a v m ^ c V TO rT (di/dt)cr tq ty p (dv/dt)cr V gt Ig t R th J C tvj = 2 5 °C tv j = 1 8 0 °e l IEC 747-6 25 “C s in u s V/ns V mA °c/w 1.4 150 0.3 tv j m ax Outline V rrm V dsm = V qrm

g2501

Abstract: siemens ferrite transformer B82791-H2601-N1 ferrite core transformer siemens matsushita ntba siemens B82791-G2501-N1 B82791-H2251-N20 B82791-H2701-N1 g2701 ntba
Contextual Info: EMC Components Chokes for Power Lines Current-Compensated Ring Core Double Chokes B82791-H/-G Data Book Supplement Power Line Chokes Current-Compensated Ring Core Double Chokes B82791-H/-G Rated voltage 250 V~ Rated current 0,25 to 0,7 A Rated inductance 4,7 bis 47 mH

Contextual Info: QPL Attenuators - N Type - Fixed Coaxial MIL-A-3933/18 MILITARY PART NO. MIDWEST PART NO. - 21 - 22 - 23 - 24 M3933/18-21N M3933/18-22N M3933/18-23N M3933/18-24N ATTENUATION VALUE dB 3 6 10 20 FREQUENCY RANGE (GHz) COMMERCIAL ALTERNATE DC - 18.0 DC - 18.0

VD121

Contextual Info: Rectifier Diodes Type Netz-Gleichrichterdioden V rrm Ifrm sm V A + 100V 50V 1' V rsm = V rrm If s m ii2dt If A V M ^c A/°C kA A2s 10 ms, 10ms, Tvj max T v j max *103 5 4 105,8 80 V(TO) rT R th J C T"vj max V m ii °C/W °c outline Tvj=Tvj max Tvi=Tvi max 180° el sin

Contextual Info: May 2008 2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features  8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

034007

Abstract: ATT-0219-03-NNN-02
Contextual Info: QPL Attenuators - N Type - Fixed Coaxial MIL-A-3933/18 TYPE N 1 .7 7 4 5 .0 MILITARY PART NO. -21 -22 -23 -2 4 MIDWEST PART NO. ATTENUATION VALUE (dB) M3933/18-21N M3933/18-22N M3933/18-23N M3933/18-24N FREQUENCY RANGE (GHz) 3 6 10 20 DC - 18.0 D C -18 .0