N50 DIODE Search Results

24N50

Abstract: 21N50 26N50 N50 DIODE IXFH26N50 .24n50 IXFH 24N50 IXFH24N50
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 21 N50 IXFH/IXFM 24 N50 IXFH 26 N50 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

13N50

Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

13N50

Abstract: 1117 MC
Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W £ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

48N50

Abstract: 44N50 IXFK48N50 ixys ixfk 44n50
Contextual Info: HiPerFETTM Power MOSFETs IXFK 44 N50 IXFK 48 N50 VDSS ID25 RDS on 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω trr ≤ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C

13N50

Abstract: .15 k 250
Contextual Info: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 Ω ≤ 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

STM TO 247 package inductance

Abstract: SS24A 24N50 ixtm21n50 ixys ixth 21N50
Contextual Info: VDSS IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 M egaM O S FET 500 V 500 V D ^D25 DS on 21 A 0.25 ß 24 A 0.23 a N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS ^ = 25°C to 150°C 500 V VooR ^ = 25°C to 150°C; RGS = 1 MQ 500 V VGS VGSM

ixys ixth 21N50

Abstract: 21N50 24N50 ixth21n50
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 21 N50 IXTH/IXTM 24 N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

48N50

Abstract: W48A IXFN48N50 44N50
Contextual Info: HiPerFETTM Power MOSFETs IXFN 44 N50 IXFN 48 N50 500 V 500 V 44 A 48 A 0.12 Ω 0.10 Ω 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25

gs 1117 ax

Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Contextual Info: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions

RFM10N50

Abstract: AN7254 AN7260 RFM10N45 TA17435
Contextual Info: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,

Contextual Info: HiPerFET Power MOSFETs IXFH13N50 IXFM13 N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Maximum Ratings v OSS ^ = 25°C to 150°C 500 V V „ ^ = 25°C to 150°C; Rgs = 1 M fi 500 V VGS VGSM Continuous ±20 V T ransient

ste36n50a

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T E 3 6 N50 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE36N 50A dss 500 V RDS on Id < 0 .1 4 ß 36 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY . VERY LARGE SOA - LARGE PEAK POWER

STE36N50

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S TE 3 6 N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE36N50 V dss 500 V RDS on Id < 0 .1 4 Q. 36 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

GC550

Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S T E 26 N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE26N50 V dss 500 V R D S o n Id < 0 .2 Q. 26 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

IXFN61N50

Contextual Info: HiPerFETTM Power MOSFET IXFN 61 N50 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Objective Technical Specification * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ

47n50

Abstract: STE47N50 diode sg 47
Contextual Info: £ j ï SGS-THOMSON ULKgraMOeS S TE 4 7 N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E STE47N50 V dss 500 V R D S o n Id < 0 .1 i2 47 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

MFL-75

Abstract: 4835 mosfet mfl sot
Contextual Info: HiPerFET Power MOSFET IXFN 58N50 IXFN 61 N50 Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 500 V Voon ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V 58 61 232 244 A A A A 61 A = 25°C to 150°C; Rgs= 1.0 MQ Tc = 25°C 'OM Tc = 25°C 1

IXFH30N50

Abstract: IXFH32N50
Contextual Info: P R E L IM IN A R Y D A T A S H E E T V DSS HiPerFET Power MOSFETs IXFH30N50 IXFH32 N50 ^D25 p DS on 500 V 30 A 0.16 Q 500 V 32 A 0.15 a trr < 250 ns N-Channel Enhancement Mode High dv/dt, Low HDMOS™ Family Symbol Test Conditions V DSS Tj V DCR Tj = 25°C to

Contextual Info: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101

FDN363N

Abstract: N6 marking diode marking n9
Contextual Info: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)

n13 sot 65

Abstract: FDT461N 29e8 RS80 marking 461 m067
Contextual Info: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode

m079

Abstract: HUFA75433S3S HUFA75433S3ST Marking N8 KP26
Contextual Info: HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16mΩ General Description Applications These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse

65e9

Abstract: TB370 AN7254 AN7260 ITF86116SQT
Contextual Info: ITF86116SQT interrii 10A, 30 V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET mi J a n u a ry . Data Sheet File Number 4808.1 Features • Ultra Low On-Resistance ‘ rDS ON = 0.012£i, VGs = 10V Packaging ‘ rDS(ON) = 0.016£i, VGs = 4.5V TSSOP8 • Gate to Source Protection Diode