N39 TRANSISTOR Search Results

SOT23 W1P

Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23

SOT23 W1P

Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
Contextual Info: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X

BFG540 N43

Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE

n37 transistor

Abstract: EL2075 EL4083 n38 transistor n34 transistor VFI15 VFI13 EL2082 EL4083CN EL4083CS
Contextual Info: EL4083 CT ODU ENT E PR PLACEM r at T E L E O R S e B D C nte /tsc O NDE port MME ical Sup ersil.com O C E n t h w.in NO R oData r Tec oSheet r ww ct u conta -INTERSIL 1-888 December 1995, Rev. B FN7157 Current Mode Four Quadrant Multiplier Features The EL4083 makes use of an Elantec

n37 transistor

Abstract: N38 transistor NPN N43 fi-14 current conveyors EL4083 EL4083C EL4083CN N39 transistor QCX0002
Contextual Info: EL4083C EL4083C Current Mode Four Quadrant Multiplier Features General Description  Novel current mode design Virtual ground current summing inputs Differential ground referenced current outputs  High speed both inputs 200 MHz bandwidth 12 ns 1% settling time

current conveyors

Abstract: 100 N31 transistor 2e17 n37 transistor 100 n37 three pin
Contextual Info: EL4083C EL4083C Current Mode Four Quadrant Multiplier Features General Description  Novel current mode design Virtual ground current summing inputs Differential ground referenced current outputs  High speed both inputs 200 MHz bandwidth 12 ns 1% settling time

transistor N43

Abstract: 4083C
Contextual Info: HIGH PERFORMANCE ANALOG iNTEOTATÊDCMCUfTS F eatu res Current Mode Four Quadrant Multiplier G eneral D escrip tion T he 4083C m akes use of an E lantec fully com plim entary oxide isolated bipolar process to produce a p a te n t pending cu rren t in, cu rren t out four q uadrant m ultiplier. In p u t and o u tp u t signal

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

inverter omron 3G3jV

Abstract: inverter omron 3G3EV 3G3JV-AB004 3G3JV-AB007 inverter omron 3G3jV-a4022 OMRON 3G3JV 3G3JV-A2015 transistor A2022 catalog inverter omron 3G3EV 3G3JV-A2007
Contextual Info: Cat.No. I905–E1–2 SYSDRIVE 3G3JV Series CATALOG Nomenclature Panel Top protection cover: Remove this cover when wiring the upper terminal block. Upper terminal block: A terminal block on the input side of the main circuit. Digital Operator: Used to set parameters, perform various

N45 transistor

Abstract: Ghz dB transistor BFG505 bfg505xr MRA639
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG505; BFG505/X; BFG505/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG505; BFG505/X; BFG505/XR

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1995 Philips Sem iconductors 1998 Oct 02 PHILIPS Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES PINNING • High power gain DESCRIPTION

inverter omron 3G3EV

Abstract: sysdrive 3G3EV inverter omron 3G3EV 3g3EV omron inverter Sysdrive 3G3EV 3G3EV inverter 3G3EV A2004 omron inverter 11 kW 3g3ev 3G3EV-A2007 inverter omron 3G3EV -AB004 MA
Contextual Info: USER’S MANUAL SYSDRIVE 3G3EV SERIES Standard Models Compact Low-noise Inverter Thank you for choosing this SYSDRIVE 3G3EV-series product. Proper use and handling of the product will ensure proper product performance, will length product life, and may prevent possible accidents.

BFG505

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification Supersedes data of September 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X

pj 0159

Contextual Info: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency

transistor SMD 1p6

Abstract: SMD transistor n36 TRANSISTOR N36 SMD report on colpitts oscillator a 933 transistor Transistor 933 smd n43 transistor A 933 BFG520 A3 smd transistor spec
Contextual Info: Philips Semiconductors 933 MHz low power downconverter with 60 MHz I.F. ^ lcatlon rePort 933 \r H z L O W P O W E R D O W N C O N V E R T E R W IT H 60 M H z I.F . Introduction This application note describes the performance o f a 900 M Hz low voltage 3 volt dow nconverter

TRANSISTOR SMD L82

Abstract: report on colpitts oscillator siemens c35 terminal BFG520 B69812-N1897-A320 BB131 BC807 BFG505 BFG505X smd transistor JJ
Contextual Info: Philips Semiconductors 1890 MHz low power downconverter with 110 MHz I.F. Application report 1890 M H z L O W P O W E R D O W N C O N V E R T E R W IT H 110 M H z I .F . In tro d u c tio n T his application note describes the perform ance o f a 1890 M H z low voltage 3 volt

vrm circuit testing

Abstract: VRM Section of Motherboard VRM 9.0 CISPR22 249205 vrm section intel vrm circuit testing
Contextual Info: VRM 9.0 DC-DC Converter Design Guidelines April 2001 Order Number 249205-002 VRM 9.0 DC-DC Converter Design Guidelines Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property

transistor P397

Abstract: transistor P479 P449 p331 TRANSISTOR transistor k38 v6 transistor P519 am2 am3 p055 power transistor f AJ38 w38 transistor
Contextual Info: MSX532 Matrix Switch Preliminary Data Sheet Features Description • • The MSX family of SRAM-based bit-oriented switching devices offers flow-through NRZ datarates of 300Mbps and registered clock frequencies of 200MHz. The 532 I/O Buffers IOBs are individually configured. The IOBs can be connected

AH40

Abstract: AW33 AA41 BC35 EPF8050M
Contextual Info: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features Data Sheet • Prelim inary Information ■ ■ ■ ■ Architecture Description Ideal for ASIC prototyping Combination of four EPF81188 devices and one Field Programmable Interconnect FPIC device

epf8050M

Contextual Info: EPF8050M FLEX 8000M Programmable Logic Device March 1995, ver. 3 Features D a tasheet • Prelim inary Information ■ ■ ■ Architecture Description The Altera EPF8050M device combines four EPF81188 devices and one Field Programmable Interconnect FPIC device to create a 50,000-gate

n37 transistor

Abstract: AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

w34 transistor

Abstract: IN118 IN125 IN19IN20 AB-39
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

fairchild aa35

Abstract: Fairchild F8 A38 fairchild fairchild Af34 fairchild Af35 w38 transistor fairchild AG6 diode in60p OCX256 IN101P
Contextual Info: OCX256 Crosspoint Switch Advanced Datasheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

N38 transistor

Abstract: w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports