N2 MOS Search Results

TDA8357 equivalent

Abstract: TDA8359J equivalent pin voltages OF IC tda8357 TDA8359J tda8357 TDA8357j OF IC tda8357 TV flyback transformer TDA8359 tda9587h
Contextual Info: APPLICATION NOTE Application information for TDA8357J N2 and TDA8359J N2 deflection output circuits AN01056 Version 1.0 January 2002 Philips Semiconductors Philips Semiconductors TDA8357JN2 and TDA8359JN2 Vertical deflection output Application Note AN01056

Contextual Info: ;6 21  BGU6005/N2 Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 1 — 24 March 2014 Preliminary data sheet 1. Product profile 1.1 General description The BGU6005/N2 is a Low Noise Amplifier LNA for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU6005/N2 requires only

N2 SOT-23

Abstract: wg 252 2N6660 SOT-89 N2 TO-92 TN0604 equivalent TN2524 to-39 supertex VN0808 VN10K
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs Device BVDSS V (max Ω) (min A) (max pF) (max V) VGS(TH) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N7000 60

TN2524

Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
Contextual Info: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)

WW03A3SBQ4-N2

Contextual Info: WAH WANG HOLDINGS HONG KONG CO., LTD. Factory : WAH WANG OPTOELECTRONIC (SHENZHEN) CO LTD ; Wah Wang Data Sheet for 3mm Super Bright Blue LED 3A3 Series Angle: 25° Class: Q Part No: WW03A3SBQ4-N2 Address : Tel : Fax : Web Site : WW03A3SBQ4-N2 Unit 08, 8th Floor, Nanyang Plaza,

raychem JOINT procedure KIT 11kv cable shrinkable

Abstract: 11kv raychem termination kit raychem heat shrink boots raychem 11KV CABLE JOINT KIT STS221 raychem silicone grease HSFR12-6-4 raychem JOINT KIT Heat-shrinkable 11KV PANDUIT corporation tie wrap raychem heat shrinkable joint procedure
Contextual Info: 412031.N01 SHRINK 3/5 3/14/03 10:52 AM Page 1 Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N2 Heavy Wall Heat Shrinkable Tubing . . . . . . . . . . . . . . . . . . . . . . . . . . . N3-N6 Heat Shrinkable End Caps . . . . . . . . . . . . . . . . N7

2n60

Abstract: 2N60 TO-252 2n60 MOSFEt ET2N60 ISD20A TO252 rthjc CHARACTERISTICS DIODE 2n60 to-251 TO-252 2N60 TO220F
Contextual Info: 2N60 N2 Amps，600Volts N-Channel MOSFET • Description The ET2N60 N-Ceannel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

M2 DIODE

Abstract: TDA8359J equivalent TDA9587H flyback transformer philips TV AN10114-01 East west single transistor TDA8359J crt vertical deflection circuit TDA935X AN10114
Contextual Info: APPLICATION NOTE Application information for TDA8358J N2 deflection output circuit with East - West amplifier AN10114-01 Version 1.0 June 2002 Philips Semiconductors Philips Semiconductors TDA8358JN2 Vertical deflection output + East - West amplifier Application Note

TDA 8841 IC

Abstract: TDA 8844 equivalent tda 8842 equivalent Block Diagram tda 8374 A Block Diagram tda 8374 TDA8841 TDA8841 free Block Diagram tda 8843 Block Diagram tda 8842 TDA8843
Contextual Info: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA884X/5X-N2 series I2C-bus controlled PAL/NTSC/SECAM TV processors Tentative Device Specification Philips Semiconductors December 16, 1997 Previous version: April 24, 1997 Philips Semiconductors Tentative Device Specification

transistor d711

Contextual Info: INTEGRATED CIRCUITS DEVICE SPECIFICATION TDA 9321H-N2 I2C-bus controlled TV input processor Final Device Specification Philips Semiconductors May 28, 1999 Previous version: April 27, 1999 Philips Semiconductors Final Device Specification I2C-bus controlled TV input processor

tda 9381 ps

Abstract: TDA 9361 PS TDA 9350 PS tda 9381 ps n2 ic tda 9381 TDA 9351 PS tda 9350 ps/n2 tda 9381 tda 9386 ps philips colour television picture tube pin volt
Contextual Info: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.8 Integrated Circuits, <Handbook> Version: 2001 Jan 18 Previous date: 2000 Nov 29

TDA 0200

Contextual Info: INTEGRATED CIRCUITS DEVICE DATASPECIFICATION SHEET TDA935X/6X/8X PS/N2 series TV signal processor-Teletext decoder with embedded µ-Controller Tentative Device Specification File under2.85 Integrated Circuits, <Handbook> Version: 2001 Apr 12 Previous date: 2000 Nov 29

d80an2

Abstract: D80AM2
Contextual Info: D80AM2.N2 FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 0.32 AMPERES 150, 200 VOLTS RDS i ON = 5.0 n

DMC364

Contextual Info: DMC364A6 Tentative Total pages page DMC364A6 Silicon NPN epitaxial planar type Tr1 Silicon NPN epitaxial planar type (Tr2) For digital circuits Marking Symbol : N2 Package Code : SSSMini6-F2-B Internal Connection 6 5 Absolute Maximum Ratings Ta = 25 °C

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

MLX90609-N2

Abstract: CLCC32 robots designing melexis cross MEMS ICS ir sensor smd applications of mems gyroscope
Contextual Info: Automotive ICs Navigation Gyroscope MLX90609-N2 • • • • • Bus ICs Applications CMOS Imaging • • High resolution and dynamic range Both digital SPI and analog outputs Low acceleration and angular rate cross sensitivity Low zero rate output drift

ADSP-2100

Abstract: ADSP-2100A 128-point radix-2 fft
Contextual Info: Two-Dimensional FFTs 7 7 7.1 TWO-DIMENSIONAL FFTS The two-dimensional discrete Fourier transform 2D DFT is the discretetime equivalent of the two-dimensional continuous-time Fourier transform. Operating on x(n1,n2), a sampled version of a continuous-time

DRCF123E

Contextual Info: DRCF123E Tentative Total pages page DRCF123E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : N2 Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

SOT1118

Abstract: PMCPB5530X NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: 020 -6 PMCPB5530X DF N2 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

Contextual Info: MD -6 PMPB11EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: MD -6 PMPB20EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 020 -6 PMDPB85UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

WD2511A

Abstract: SR24S WD2511 DALI gateway RDD 17-33 48-PIN 68-PIN SR16 W2511A "LINK STATE"
Contextual Info: WD2511A X.25 Packet Network Interface LAPB FEATURES Handles The Entire Link Level Com m unication Protocol • International standard CCIT X.25 LAPB protocol for packet switching • Program m able link level tim er (T1) and retransm ission counter (N2)