N10A Search Results
N10A Datasheets (30)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| N10A | National Semiconductor | 10-Lead Molded Dual-In-Line Package | Original | 57.93KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SL10N10A
|
SLKOR | Trench Power MV MOSFET technology, SOT-223 package, VDS 100V, RDS(ON)@10V,MAX 95mΩ, ID 10A, VGS ±20V, TJ 150°C, TSTG -50 to 155°C, ID Tc=25°C 10A. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTG320N10A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel enhancement mode power MOSFET with 100V drain-source voltage, 28A continuous drain current, and RDS(on) less than 30mΩ at VGS=10V in a PDFN5x6-8L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTN11DN10A
|
Jiangsu JieJie Microelectronics Co Ltd | 100V, 3A N-channel enhancement mode power MOSFET in SOT-89-3L package with RDS(on) less than 125mΩ at VGS=10V, featuring advanced trench technology for efficient power management and load switch applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SK05N10A
|
Shikues Semiconductor | Advanced trench tech, low gate charge, high density cell, excellent heat dissipation, power switching, UPS. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTQ320N10A
|
Jiangsu JieJie Microelectronics Co Ltd | 100V, 23A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 32mΩ at VGS=10V, available in PDFN3x3-8L package, designed for load switching, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCEAP25N10AG
|
NCEPOWER | NCEAP25N10AG is an automotive-grade N-channel Super Trench II power MOSFET with 100 V drain-source voltage, 32 A continuous drain current, and low on-resistance of 21 mΩ at 10 V gate-source voltage, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTQ11DN10A
|
Jiangsu JieJie Microelectronics Co Ltd | 100V, 10A N-channel enhancement mode power MOSFET in a PDFN3x3-8L package with RDS(on) less than 120mΩ at VGS=10V, featuring advanced trench technology and low gate charge for efficient power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SL15N10A
|
SLKOR | VDS 100V, ID 15A, RDS(ON) at VGS=10V <115mohm, at VGS=4.5V <10mohm, Trench Power MV MOSFET, high density cell, heat dissipation, DC-DC Converters, power management. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTI320N10A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low on-resistance of 32mΩ at VGS=10V, available in TO-251-4R package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTJ11DN10A
|
Jiangsu JieJie Microelectronics Co Ltd | 100V, 3A N-channel enhancement mode power MOSFET in SOT-23-3L package with RDS(on) less than 115 mΩ at VGS = 10V and low gate charge, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTY11DN10A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel enhancement mode power MOSFET in SOT-223 package, 100 V drain-source voltage, 5 A continuous drain current, RDS(on) less than 125 mΩ at VGS = 10 V, suitable for load switch, PWM, and power management applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTC170N10A
|
Jiangsu JieJie Microelectronics Co Ltd | 100V, 59A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(on) less than 20 mΩ at VGS = 10V, suitable for power management and load switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZXMN10A25K
|
Shenzhen Heketai Electronics Co Ltd | N-channel high-voltage MOSFET with 100V drain-source voltage, 125mΩ on-resistance at 10V gate voltage, 6.4A continuous drain current, and surface mount TO-252 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCEAP25N10AD
|
NCEPOWER | NCEAP25N10AD is an N-channel Super Trench II power MOSFET with 100 V drain-source voltage, 37 A continuous drain current, and low on-resistance of 21 mΩ at 10 V gate-source voltage, optimized for high-frequency switching and synchronous rectification. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CJAC110SN10A
|
JCET Group | N-Channel Power MOSFET CJAC110SN10A with 100V drain-source voltage, 110A continuous drain current, 3.4mΩ typical RDS(on) at 10V VGS, shielded gate trench technology, low gate charge, and PDFN5×6-8L package for high power density and efficient heat dissipation. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTK500N10A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel enhancement mode power MOSFET with 100V drain-source voltage, 20A continuous drain current, and RDS(on) less than 48mΩ at VGS=10V in a TO-252-4R package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTI10N10A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel enhancement mode power MOSFET with 100V drain-source voltage, 10A continuous drain current, and RDS(on) less than 110mΩ at VGS=10V, housed in a TO-251-3L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKQ48N10AD
|
Shikues Semiconductor | VDSS 100V, ID 48A, RDS(ON) 10mΩ @ VGS=10V, DFN5X6-8L, Trench tech, PWM, load switching, general purpose. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SKQ90N10AD
|
Shikues Semiconductor | 100V N-Channel MOSFET, RDS(ON)=4mΩ@10V, 5mΩ@4.5V, DC-DC Converter, Motor Control, Load Switching, Secondary Side Sync Rectification. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
N10A Price and Stock
Select Manufacturer
onsemi NCP380HSN10AAT1GPower Distribution Switch, Current-Limiting (Fixed and Adjustable) 1.0 A, Enable H - Tape and Reel (Alt: NCP380HSN10AAT1G) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
NCP380HSN10AAT1G | Tape & Reel | 6,000 | 23 Weeks | 3,000 |
|
Buy Now | ||||
|
NCP380HSN10AAT1G | 10,942 |
|
Buy Now | |||||||
|
NCP380HSN10AAT1G | Cut Tape | 866 | 1 |
|
Buy Now | |||||
| NCP380HSN10AAT1G | Tape & Reel | 866 | 100 |
|
Buy Now | ||||||
|
NCP380HSN10AAT1G | 320 | 1 |
|
Buy Now | ||||||
|
NCP380HSN10AAT1G | 11,310 | 1 |
|
Buy Now | ||||||
|
NCP380HSN10AAT1G | 19,500 |
|
Get Quote | |||||||
|
NCP380HSN10AAT1G | 3,000 | 30 Weeks | 3,000 |
|
Buy Now | |||||
|
NCP380HSN10AAT1G | 255,000 |
|
Get Quote | |||||||
|
NCP380HSN10AAT1G | 3,000 |
|
Buy Now | |||||||
|
NCP380HSN10AAT1G | 15,740 |
|
Buy Now | |||||||
onsemi FDB035N10APower MOSFET, N Channel, 100 V, 214 A, 0.0035 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: FDB035N10A) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
FDB035N10A | Tape & Reel | 800 | 35 Weeks | 800 |
|
Buy Now | ||||
|
FDB035N10A | 14,889 |
|
Buy Now | |||||||
|
FDB035N10A | 380 | 1 |
|
Buy Now | ||||||
|
FDB035N10A | 800 |
|
Get Quote | |||||||
|
FDB035N10A | 78 Weeks | 800 |
|
Get Quote | ||||||
|
FDB035N10A | 1,600 |
|
Get Quote | |||||||
NXP Semiconductors MCIMX6L3DVN10ABMicroprocessor, i.MX Family i.MX 6 Series, 32bit, 1GHz, 1.375V to 1.5V, TFBGA-432 - Trays (Alt: MCIMX6L3DVN10AB) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
MCIMX6L3DVN10AB | Tray | 342 | 39 Weeks | 160 |
|
Buy Now | ||||
|
MCIMX6L3DVN10AB | 10,400 |
|
Get Quote | |||||||
|
MCIMX6L3DVN10AB | 7,194 |
|
Get Quote | |||||||
Glenair Inc M83723/15N10A- Bulk (Alt: M83723/15N10A) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
M83723/15N10A | Bulk | 3 Weeks | 1 |
|
Get Quote | |||||
|
M83723/15N10A |
|
Buy Now | ||||||||
|
M83723/15N10A | 14 | 1 |
|
Buy Now | ||||||
|
M83723/15N10A |
|
Get Quote | ||||||||
Vishay Intertechnologies 6DFN10A-M3/H- Tape and Reel (Alt: 6DFN10A-M3/H) |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
6DFN10A-M3/H | Tape & Reel | 3,500 |
|
Buy Now | ||||||