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Altech Corporation TR11-D-Y-63-BB-2-N-10.0A Circuit Breaker Supplementary Protector 10A 240VAC 50VDC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	TR11-D-Y-63-BB-2-N-10.0A		126			1 - 10 $8.96 100 $5.97 1000 $5.50 10000 $5.47	Buy Now
Powell Electronics	TR11-D-Y-63-BB-2-N-10.0A		79		1	1 $5.00 10 $5.00 100 $5.00 1000 $5.00 10000 $5.00	Buy Now
TDK-Lambda Corporation CN100A110-24 DC-DC Railway 100.8W 60-160V 24V 4.2A 1/4 brick
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	CN100A110-24		4			1 $164.43 10 $164.43 100 $164.43 1000 $164.43 10000 $164.43	Buy Now
Newark	CN100A110-24	Bulk			1	1 $171.95 10 $164.20 100 $164.20 1000 $164.20 10000 $164.20	Buy Now
TDK-Lambda Corporation CN100A110-12 DC-DC Railway 100.8W 60-160V 12V 8.4A 1/4 brick
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	CN100A110-12		3			1 $174.87 10 $174.87 100 $174.87 1000 $174.87 10000 $174.87	Buy Now
Newark	CN100A110-12	Bulk			1	1 $171.95 10 $164.20 100 $164.20 1000 $164.20 10000 $164.20	Buy Now
Sager	CN100A110-12				1	1 $146.22 10 $138.47 100 $119.64 1000 $119.64 10000 $119.64	Buy Now
United Chemi-Con Inc APXN100ARA121ME61G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	APXN100ARA121ME61G					1 - 10 - 100 - 1000 $0.25 10000 $0.22	Buy Now
TE Connectivity F2M27N100AF1 The F2M27N100AF1 is a standard FLEXPAC component from TE Connectivity featuring Nomex material.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	F2M27N100AF1					1 - 10 $6.32 100 $6.13 1000 $5.76 10000 $5.66	Buy Now
TME	F2M27N100AF1		150		9	1 - 10 $10.00 100 $8.18 1000 $8.18 10000 $8.18	Buy Now

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N100A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
17n100a Abstract: NC2030 17N100AU1 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 17n100u1 17n100au1 +217n100a nc2030	PDF
Contextual Info: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2	OCR Scan	n100u1 n100au1 o-247 10n100u1 +210n100au1 4bflb22b	PDF
IXGH17N100 Contextual Info: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi	OCR Scan	ixgh/ixgm17n100 ixgh/ixgm17 n100a o-247 +1ixgh17n100	PDF
25N100 Contextual Info: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25	Original	n100a o-204 o-247 25n100g2 +125n100	PDF
C289 Abstract: IXTM5N100A Contextual Info: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il	OCR Scan	n100a o-247 o-204 c2-88 +5ixth5n100 1xtm5n100 c2-89 c289 ixtm5n100a	PDF
17N10 Contextual Info: Low VCE sat IGBT High speed IGBT Symbol Test Conditions VCES VCGn ^ ^ VGES v GEM 'c25 IXGH/IXGM17 N100 IXGH/IXGM17 N100A Maximum Ratings = 25°C to 150°C 1000 V = 25°C to 150°C; RGE = 1 MU 1000 V Continuous ±20 V Transient ±30 V 34 A Tc = 25”C 'c90	OCR Scan	ixgh/ixgm17 n100a o-247 o-204 +417n100 17n100u1 17n100au1 17n10	PDF
10N100U1 Abstract: N100A ixgh 1500 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 10n100u1 10n100au1 +2n100a ixgh 1500	PDF
5n100 Abstract: 5N100A Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM	OCR Scan	n100a o-247 o-204 4bflb52b +25n100 5n100a	PDF
2SN100 Abstract: 25N100 Contextual Info: VCES Low V CE sat <" W¥V High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A ^C25 1000 V 1000 V v* CE(sat) 50 A 1 3.5 V 50 A 4.0 V G_ Symbol Test C onditions Maximum Ratings V " ces Tj = 25°C to 150°C 1000 V v CGR T j = 25°C to 150°C; RGE = 1 M n 1000	OCR Scan	n100a t0-247 t0-204 o-247 +22sn100 25n100	PDF
Contextual Info: v Low VCE sst High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A « Symbol Test Conditions vCES Tj = 25°C to 150°C 1000 V V cG R ^ 1000 V V GES Maximum Ratings = 25°C to 150°C; RGE = 1 Mi2 v Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C 50 A ^C90	OCR Scan	n100a o-247 t0-204 4bflb22b +225n100 25n100a	PDF
25N100A Contextual Info: nixYS Lo w Vce mi ig b t High Speed IGBT IXSH/IXSM25N100 IXSH/IXSM 25 N100A v* C E S ^C 25 vv C E (s a t) 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Test Conditions Maximum Ratings VCES Tj - 25°C to 150°C 1000 V v CGR v GES v GEM T, = 25°C to 150°C; RGE = 1 MQ	OCR Scan	ixsh/ixsm25n100 n100a o-247 o-204 +32sn100 25n100a 25n100	PDF
10N100 Abstract: 10N10 10N100A N100 IC-2520 Contextual Info: Low VCE sat IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A Maximum Ratings VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20	Original	n100a 10n100 10n100a 10n10 +2n100 ic-2520	PDF
17N100 Abstract: 17N100A N100 17N100AU1 Contextual Info: Low VCE sat High speed IGBT IXGH/IXGM 17 N100 IXGH/IXGM 17 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 34 A IC90	Original	n100a 17n100 17n100a o-204ae +317n100u1 n100 17n100au1	PDF
2N100 Abstract: C285 IXTP2N100A Contextual Info: ItilXYS IXTA/fXTP 2 N100 IXTA/IXTP 2 N100A VDSS ^D25 1000 V 1000 V 2A 2A p DS on 7.0 Û 6.0 ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 1000 V V Tj = 25°C to 150°C; RGS= 1 M fi 1000 V Vos VGSM Continuous	OCR Scan	n100a o-220 o-263 2n100 +42n100a c2-85 c285 ixtp2n100a	PDF

ixsm Abstract: 25N100 D-68623 25N100A N100 Contextual Info: VCES Low VCE sat IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 VCE(sat) 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	n100a o-247 d-68623 ixsm +325n100 25n100a n100	PDF
25N100A Abstract: .25N100 25N100 N100 Contextual Info: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90	Original	n100a 25n100 25n100a o-204ae +1n100	PDF
Contextual Info: OIXYS l«»v .laBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A High Speed IGBT V* C E S ^C25 V * CE sat 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Sym bol T est C o n dition s M axim um R atings v CES T j = 25°C to 150°C 1000 V V CGR T j = 25°C to 150°C; RGE = 1 M il	OCR Scan	n100a 25n100 25n1ooa	PDF
IXYS 17N100 Abstract: 17N100A 17N100 N100 Contextual Info: VCES Low VCE sat IGBT High speed IGBT IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V Maximum Ratings VGES Continuous ±20 V VGEM Transient	Original	n100a o-247 17n100 17n100a +4o-204ae 17n100u1 ixys 17n100 n100	PDF
Contextual Info: OIXYS V CES Low VCE ,i(\| IGBT High Speed IGBT IXGH 12 N100 IXGH 12 N100A e _ Symbol Test Conditions VCES Tj = $ Maximum Ratings 25°C to 150°C 1000 v CGR Tj = 25°C to 150°C; RGE = 1 MQ 1000 V Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 24 A	OCR Scan	n100a o-247 -247s	PDF
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 17n100u1 17n100au1	PDF
10N100U1 Abstract: RG150 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 10n100u1 10n100au1 +1rg150	PDF
transistor ixgh 25N100 Abstract: .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550 Contextual Info: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25	Original	n100a o-204 o-247 25n100g2 +9transistor ixgh 25n100 25n100 ixgm ixgh/ixgm 25 n100a 25n100a n100 ixgh 10v c90t ic2550	PDF
ixgh 1500 Abstract: 17N100U1 17N100AU1 AC motor speed control 17n10 Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	n100u1 n100au1 17n100au1 17n100u1 +3ixgh 1500 ac motor speed control 17n10	PDF
5N100 Abstract: 5N100A N100 1000v5a 2NA250 Contextual Info: VDSS Standard Power MOSFET ID25 IXTH/IXTM 5 N100 1000 V IXTH/IXTM 5 N100A 1000 V 5A 5A RDS on 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000	Original	n100a o-204 o-247 5n100a +5o-204ae 5n100 n100 1000v5a 2na250	PDF

N100A Search Results

N100A Price and Stock

Altech Corporation TR11-D-Y-63-BB-2-N-10.0A

TDK-Lambda Corporation CN100A110-24

TDK-Lambda Corporation CN100A110-12

United Chemi-Con Inc APXN100ARA121ME61G

TE Connectivity F2M27N100AF1

N100A Datasheets Context Search

17n100a

IXGH17N100

25N100

C289

17N10

10N100U1

5n100

2SN100

25N100A

10N100

17N100

2N100

ixsm

25N100A

IXYS 17N100

10N100U1

transistor ixgh 25N100

ixgh 1500

5N100