N100 PACKAGE Search Results

GAS-1N

Abstract: GPS antenna 1575 and 1227 1n1001 GPS Antenna N100-1 military Antenna square patch Antenna DM 0385 navstar N1001
Contextual Info: Wireless NAVIGATION DM N100-1 GPS ANTENNA The newly introduced DM N100-1 GPS antenna has been designed to provide a reduced size aperture for Antijam GPS reception over the full military GPS bandwidth. While fully compliant with GAS-1N requirements, the DM N100-1 footprint is a mere

10N100

Abstract: 13N100 N100 13n10
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions

10N100

Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions

Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFT 10 N100 1000 V 10 IXFT12 N100 1000 V 12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family RDS on A A 1.20 Ω 1.05 Ω trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR

13n10

Abstract: 10N100 N100 13N100
Contextual Info: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C

15N100

Abstract: IXFH15N100 IXFH14N100 14N100 IXFT14N100 N100 CASE OUTLINE 55 BT- Style 1
Contextual Info: VDSS HiPerFETTM Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 RDS on 1000 V 14 A 0.75 W 1000 V 15 A 0.70 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings

10N100

Abstract: N100
Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFT 10 N100 1000 V 10 IXFT12 N100 1000 V 12 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family RDS on A A 1.20 Ω 1.05 Ω trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR

10N100

Contextual Info: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C

D1488

Abstract: TO-247 AD
Contextual Info: □ IX Y S VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14 N100 IXFH/IXFT/IXFX15 N100 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D ^D25 1000 V 14 A 1000 V 15 A trr < 200 ns D S o n 0.75 Q 0.70 Q Preliminary data sheet Maximum Ratings

10N100

Abstract: 12n100 N100
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 1000 V 1000 V Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C

10N100

Abstract: N100 12n100 TO204AA
Contextual Info: VDSS MegaMOSTMFET ID25 RDS on 1000 V 10 A 1.20 Ω 1000 V 12 A 1.05 Ω IXTH/IXTM 10 N100 IXTH/IXTM 12 N100 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V

Contextual Info: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V

3015 hj

Abstract: SK 1117
Contextual Info: 1 V A V 'C L J V DSS MegaMOS FET IXTH/IXTM10 N100 IXTH/IXTM12 N100 p ^D25 DS on 1000 V 10 A 1.20 a 1000 V 12 A 1.05 q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V *DSS Tj = 25 °C to 150°C 1000 V vDGR Tj = 25°C to 150°C; RGS = 1 M n

n161

Abstract: N100 transistor N100 FLATPACK
Contextual Info: Package Diagram Plastic Quad Flatpacks 52-Lead Plastic Quad Flatpack N52 51-85042 1 Package Diagram 64-Lead Plastic Quad Flatpack N64 51-85036-A 2 Package Diagram 80-Lead Plastic Quad Flatpack N80 3 Package Diagram 100-Lead Plastic Quad Flatpack N100 51-85052-A

15N100

Contextual Info: VDSS HiPerFET Power MOSFETs p ^D25 DS on 1000 V 14 A 0.75 Ü 1000V 15 A 0.7 Q trr < 200 ns ix f h / i x f x i 4 n io o IXFH/IXFX15 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data Symbol Test Conditions Maximum Ratings

5N100

Abstract: 5N100A N100 1000v5a 2NA250
Contextual Info: VDSS Standard Power MOSFET ID25 IXTH/IXTM 5 N100 1000 V IXTH/IXTM 5 N100A 1000 V 5A 5A RDS on 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000

Contextual Info: HiPerFET Power MOSFETs V DSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Voss V«, Tj = 25°C to 150°C Vos VGSM Continuous T ransient IXFH/IXFM10N100 IXFH/IXFM12 N100 IXFH13N100 00 Maximum Ratings Tj = 25°C to 150°C; RGS= 1 M ii

Contextual Info: MECHANICAL DATA MPBG037 – JANUARY 1997 GGF S-PBGA-N100 PLASTIC BALL GRID ARRAY PACKAGE 10,10 SQ 9,90 15 4 2 14 12 10 8 6 3 1 13 11 9 5 7 A B C D E F G H J K L 0,50 M N P R 0,50 0,95 0,85 0,12 0,08 1,20 MAX 0,35 0,25 0,05 M 0,25 0,20 0,08 4073214-2/B 10/96

transistor ixgh 25N100

Abstract: .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550
Contextual Info: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25

.25N100

Abstract: 25N100 25N100A N100 25N10
Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A VCES IC25 VCE(sat) 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

DIODE B44 sot

Abstract: IXTK21 B44 diode IXTN21N100
Contextual Info: IXTK21 N100 IXTN21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V

17N10

Contextual Info: Low VCE sat IGBT High speed IGBT Symbol Test Conditions VCES VCGn ^ ^ VGES v GEM 'c25 IXGH/IXGM17 N100 IXGH/IXGM17 N100A Maximum Ratings = 25°C to 150°C 1000 V = 25°C to 150°C; RGE = 1 MU 1000 V Continuous ±20 V Transient ±30 V 34 A Tc = 25”C 'c90

25N100A

Abstract: .25N100 25N100 N100
Contextual Info: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90

IXYS 17N100

Abstract: 17N100A 17N100 N100
Contextual Info: VCES Low VCE sat IGBT High speed IGBT IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V Maximum Ratings VGES Continuous ±20 V VGEM Transient