N-P-N SILICON POWER TRANSISTORS Search Results

Contextual Info: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C.

BDT60

Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
Contextual Info: BDT60;60A BDT60B;60C J ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

2N6079

Contextual Info: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics

T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

2N697

Contextual Info: 2N697 Silicon N-P-N Planar Transistor. 1.61 Transistors Bipolar Silicon NPN Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N697 Online Store 2N697 Diodes Silicon N -P-N Planar Transistor. Transistors Enter code INTER3 at checkout.* Integrated Circuits

GE10023

Contextual Info: GE10015,16,20,21,22,23 File Number Silicon N-P-N Darlington Power T ransistors 2374 TERM IN A L D ESIG N A TIO N S c FLANGE The GE10015, GE10016and GE10020thru GE10023 series of silicon n-p-n power Darlington transistors are designed for use in power switching applications requiring highvoltage capability and fast switching speeds. They are

JEDEC-TO-202AB

Abstract: d40e d40es D40E1 d41e D40E7
Contextual Info: File Number D40E Series 2335 2-Ampere Silicon N-P-N Power Transistors Complementary to the D41E Series • High free-air power dissipation • • Low collector saturation voltage 0.5V typ. @ 1.0A lç Excellent linearity • Fast switching The D40E-series of silicon n-p-n power transistors are

Contextual Info: BD840 BD842 BD844 _ J \ _ SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic TO-202 envelope, recommended for use in television circuits and audio applications. N-P-N complements are BD839, BD841 and BD843.

Contextual Info: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.

2N3D55

Abstract: SDT9202 2N3055 12V SDT9204 SDT9201 SDT9203 2N3055 2N3055 silicon solidev kuhnke relay 24vdc
Contextual Info: Sem iconductors Solidev Silicon Power Transistors P H Y S IC A L D IM E N S IO N S Silicon N P N Power Transistors— 15 A m p FEATURES Rugged single diffused technology - 1MHz fT. Low saturation voltage - typically 0.3 V at Ic = 4 amps. High typical gain.

transistor tl 188

Abstract: 92CS-27516
Contextual Info: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor

BD840

Abstract: BD841 BD839 BD842 BD843 BD844
Contextual Info: BD839 BD841 BD843 SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a plastic T0-202 envelope, recommended for use in television circuits and audio applications. P-N-P complements are BD840, BD842 and BD844. QUICK REFERENCE DATA BD839

c 2432

Abstract: D72F5T2 NPN
Contextual Info: D72F5T1, D72F5T2 File Number 2363 5-Ampere Silicon N-P-N Power Transistors T E R M IN A L D E S IG N AT IO N Features: Low Vqe sat m Fast switching speed • Complementary to D73F5T1,2 ■ The D72F5T1 and D72F5T2 silicon n-p-n power transistors are designed for high current switching applications. They

5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

BDT61

Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.

BD946

Abstract: BD944 BD948 lc 945 p transistor BD943 IEC134
Contextual Info: BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE DATA BD944 946 948

Contextual Info: BD839 BD841 BD843 JV SILICON PLANAR EPITAXIAL POWER TRANSISTORS N-P-N silicon transistors, in a plastic T0-202 envelope, recommended fo r use in television circuits and audio applications. P-N-P complements are BD840, BD842 and 8D844. QUICK REFERENCE DATA

b0945

Abstract: bd947 BD944 BD945 BD943
Contextual Info: BD943 BD945 BD947 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948. QUICK REFERENCE D ATA

TA8210

Abstract: TA8232 TA8232 h TA8723 2N6108 RCA ta7741 TA7743 TA7742 ta7782 2N6475
Contextual Info: Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS 7=3 3 - £ General-Purpose Medium-Power Types for Switching and Amplifier Applications Features: • Low saturation voltages • Complementary n-p-n and p-n-p types • Maximum safe-area-of-operation curves specified

D73F5T2

Contextual Info: File Number D73F5T1, D73F5T2 2367 5-Ampere Silicon P-N-P Power Transistors Features: TERMINAL DESIGNATION • Low Vce sat m Fast switching speed m Complementary to D72F5T1,2 The D73F5T1 and D73F5T2 silicon p-n-p power transistors are designed for high current switching applications. They

028A5

Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

D44VH7

Abstract: d44vh10
Contextual Info: D44VH Serles File Number 2350 Silicon N-P-N Transistors Complementary to the D45VH Series Features: • Fast Switching ts < 700 ns resistive tf < 200 ns ■ Low VCE saf < 0.4V @ ;c = 8A TERMINAL DESIGNATIONS The D44VH series of silicon n-p-n power transistors are

U22 2.5A 250V

Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

2N4241

Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C