N-CHANNEL MOSFET 400V TO220 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in

Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

MOSFET 400V TO-220

Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF FQPF Series
Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF Series

Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQPF4N50C

Abstract: FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C FQP4N50C
Contextual Info: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 : @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

MOSFET 400V TO-220

Abstract: FQP11N40C fqpf11n40c N-Channel mosfet driver 400v to220 MOSFET 400V FQP3N50C FQPF3N50C N-Channel mosfet 400v to220
Contextual Info: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

MOSFET 400V

Abstract: MOSFET 400V TO-220 p channel mosfet 100v n-Channel mosfet 400v FQP11N40C FQP3N50C FQPF11N40C FQPF3N50C
Contextual Info: FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: QFET FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description • 10.5 A, 400V, RDS on = 0.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQP6N40CF

Contextual Info: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

Contextual Info: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

UF740L

Abstract: Power MOSFET 50V 10A UF740L-TA3-T UF740 MOSFET 400V TO-220 UF740-TA3-T UF740-TF3-T 200v 10A mosfet mosfet 10V 10A mosfet 400 V 10A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 6N40K-TA Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N40K-TA is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching

BUZ76

Abstract: TA17404 TB334
Contextual Info: BUZ76 Semiconductor Data Sheet 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET October 1998 File Number 2264.1 Features • 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.800Ω (BUZ76) field effect transistor designed for applications such as

MOSFET 400V

Abstract: TB334 400v 5a mosfet 400V switching transistor 400v mosfet Diode 400V 5A n-Channel mosfet 400v power relay N-channel mosfet BUZ35 BUZ351
Contextual Info: BUZ351 Semiconductor Data Sheet 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2266.1 Features • 11.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ35 field effect transistor designed for applications such as

BUZ76A

Abstract: TA17404 BUZ76 TB334
Contextual Info: BUZ76A Semiconductor Data Sheet 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2265.1 Features • 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 2.500Ω (BUZ76 field effect transistor designed for applications such as

BUZ60B

Abstract: BUZ60 TA17414 TB334
Contextual Info: BUZ60B Semiconductor Data Sheet 4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2261.1 Features • 4.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.500Ω (BUZ60 field effect transistor designed for applications such as

BUZ60

Abstract: TA17414 TB334 400V to 6V DC Regulator
Contextual Info: BUZ60 Semiconductor Data Sheet 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET October 1998 File Number 2260.1 Features • 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 1.000Ω (BUZ60 field effect transistor designed for applications such as

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF740 Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET „ TO-263 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

6n40

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 6N40 is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching performance and

P11NK40ZFP

Abstract: P11NK40 P11NK40Z transistor p11nk40z P11NK B11NK40 STB11NK40ZT4 STP11NK40Z STP11NK40ZFP JESD97
Contextual Info: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP