18N40 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in

"MOSFET" 400V

Abstract: mosfet 18n40 "MOSFET" 400V, 18N40 18n40l mosfet 400V 18N40
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N40 is a 400V N-channel Power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N40 Power MOSFET 18A, 400V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N40 is a 400V N-channel power MOSFET, providing customers with perfect RDS ON , low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in

ABB thyristors

Abstract: thyristor ABB
Contextual Info: Key Parameters VSM = 4200 ITAVM = 1850 ITRMS = 2900 ITSM = 32000 VT0 = 0.96 rT = 0.285 Bi-Directional Control Thyristor V A A A V mΩ 5STB 18N4200 Doc. No. 5SYA 1040-02 July 98 Features •Two thyristors integrated into one wafer •Patented free-floating silicon technology

NGB18N40CLBT4G

Abstract: NGB18N40A
Contextual Info: 18N40CLB, 18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

A 3020

Abstract: Bidirectional control thyristor
Contextual Info: VSM = 4200 V ITAVM = 1920 A ITRMS = 3020 A ITSM = 32000 A VT0 = 0.96 V rT = 0.285 mΩ Bi-Directional Control Thyristor 5STB 18N4200 Doc. No. 5SYA1040-03 Dec.00 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications

18n3600

Abstract: ABB thyristor 5 18N-3
Contextual Info: VSM = 4200 V ITAVM = 1920 A ITRMS = 3020 A ITSM = 32000 A VT0 = 0.96 V rT = 0.285 mΩ Ω Bi-Directional Control Thyristor 5STB 18N4200 Doc. No. 5SYA1040-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology

18n40bg

Abstract: GB18N40BG 18n40b NGB18N40CLBT4 NGB18N40CLBT4G GB18N40B NOR GATE IC
Contextual Info: 18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40b

Abstract: GB18N40B
Contextual Info: 18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40b

Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
Contextual Info: 18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses

Contextual Info: 18N40CLB, 18N40ACLB Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses

N40B

Abstract: g18n40 G18N40B 18n40b NGB18N40CLBT4 NGD18N40CLB NGD18N40CLBT4 4-30VDC
Contextual Info: 18N40CLBT4, 18N40CLBT4 Product Preview Ignition IGBT 18 Amps, 400 Volts http://onsemi.com N–Channel DPAK, D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

18n40b

Abstract: GB18N40B GB18N40 ignition IGBT NGB18N40CLBT4
Contextual Info: 18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses