N-CHANNEL JFET FETS Search Results

S229

Abstract: MMBF5484LT1 S129 S219 jfet transistor s129 equivalent tf5r
Contextual Info: MOTOROU SEMICONDUCTOR TECHNICAL Order this documsnt by MMBF5484LT11D DATA JFET Transistor — N-Channel MMBF5484LTI 2 SOURCE I 3 GATE a Tc = 25°C Linear Derating Factor Storage Channel Temperature THERMAL Range .$T2:%:Q$ .,\:.\ ‘:Y?< , ,>< ., Tstg -65 to +150

MMBF4391

Abstract: marking sk sot-23 sot23 marking SK 1000C MMBF4391LT1 MMBF4392 MMBF4392LT1 MMBF4393LT1 SOT-23 marking SK O25 sot23
Contextual Info: MOTOROU SEMICONDUCTOR TECHNICAL Order this document DATA by MMBF4391 LT1/D — MMBF4391LTI thru MMBF4393L71 JFET Switching ~ansistors N-Channel ?SOURCE G:TE v ,., .~:.,. k Characteristic Symbol Total Device Dissipation FR-5 Board l TA=250C Derate above 25°C

2N5486 MOTOROLA

Abstract: LMI24 2N5484 2N5484-2N5486 2N5484 MOTOROLA 2N5486 S229 2n5484 equivalent S119 S219
Contextual Info: MOTOROLA SEMICONDUCTOR — — TECHNICAL Order this document by 2N54841D DATA JFET VHF/UHF Amplifiers — Depletion N-Channel 1 DRAIN 3 GATE “6 I 2 SOURCE MHIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate–Source Voltage Drain Current Forward Gate Current

2n5484

Abstract: 2n5486 2n5484 equivalent 2n5484 jfet 2N5486 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers 2N 5484 2 N5486 N-Channel — Depletion M AXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ T q = 25 C Derate above 25°C

W609

Abstract: MMBF5459LT1 SIP SOT 23 bergquist ge MARKING ZE SOT-23 KH SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMBF5459LT1/D DATA — JFET Wansistor N-Channel I I I MMBF5459LTI I ? SOURCE G~TE Y 1DRAIN MNIMUM RATINGS Rating Drain-ate Voltage I Symbol Value Unit VDG 25 Vdc 1 THERMAL 1 [ .:?,ti CHARACTERISTICS

shock vk200

Abstract: marking c7 sot-23 MMBFU310LT1
Contextual Info: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET "Transistor N-Channel 2 SOURCE M MBFU310LT1 Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Ig 10 mAdc

rde 090

Abstract: BFJ309LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit

SU25

Abstract: SU50B10LS
Contextual Info: MICROWAVE TECHNOLOGY bb E D • bl241DD DQQD4E1 lb 3 HMRIilV SST SERIES SU/S VHF/UHF SILICON POWER FETS 10 TO 120 WATTS, 10MHz-500MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE

2N5454

Abstract: 2N5454 equivalent 2N5452 2N5452 equivalent FET package TO-71 2N5453
Contextual Info: CALOGIC CORP MAE » lflMM3EE OOÜQ328 5 M C G C Dual N-Channel JFET General Purpose Amplifier T'-zn-T.y CORPORATION 2N5452 - 2N5454 /•/iIaWî/ 1 CQlOOIC ■ 2N5452-2N5454 GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ta ■ 25°C unless otherwise noted

2N5640

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N-Channel — Depletion 2N 5555 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDS 25 Vdc Vdc Drain-Source Voltage Drain-Gate Voltage VDG 25 Gate-Source Voltage vgs 25 Vdc Forward Gate Current Ig f 10

MMBF5486LT1

Abstract: 318C8 marking gfg 6f
Contextual Info: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol

2N5555

Abstract: 2N5555 equivalent S129 S219 S229 OPF-L 2N55551
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by 2N55551D DATA JFET Switching N-Channel — Depletion 2N5555 1 DRAIN I 3 GATE @ i 2 SOURCE MHIMUM 1 RATINGS Rating Drain–Source Drain–Gate Symbol Value Unit VDS 25 Vdc Voltage Voltage VDG 25 Vdc Voltage

Contextual Info: MICROWAVE TECHNOLOGY 37E biam oG oooam? 5 D IMRUV SST SERIES SH/G VHF/UHF SILICON POWER FETS T O ^ - O Í 10 T 0 120 WATTS, 10MHz-1000MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE

J305

Contextual Info: MOTOROLA Order this document by J304/D SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Am plifiers N-Channel — Depletion J304 J305 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage V DG -3 0 Vdc Gate-Source Voltage VGS -3 0 Vdc Gate Current

uhf microwave fet

Abstract: SH100D10LG SH120D10LG SH15A10LG SH25A10LG SH25B10LG SH50B10LG SH75D10LG SH80C10LG
Contextual Info: MICROWAVE TECHNOLOGY 37E D • blSMlOO ODQOLM? S ■ MRtdV SST SERIES SH/G VHF/UHF SILICON POWER FETS 1 ^ 3 9 - 0 f 10 TO 120 WATTS, 10MHz-1000MHz * MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE

2n5484 equivalent

Abstract: 2N5486 MOTOROLA 2N5484 2N5486 2N5484 characteristics 2N5486 equivalent
Contextual Info: MOTOROLA Order this document by 2N5484/D SEMICONDUCTOR TECHNICAL DATA JFET VH F/UHF A m plifiers N-Channel — Depletion 2N 5484 2N 5486 1 DRAIN MAXIMUM RATINGS Rating D rain-G ate Voltage Reverse G ate-S ource Voltage Drain Current Symbol Value Unit Vd G

2N5555

Abstract: 2N5555 equivalent 2N555
Contextual Info: MOTOROLA Order this document by 2N5555/D SEMICONDUCTOR TECHNICAL DATA JFET S w itching N-Channel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Drain-Source Voltage Symbol Value Unit Vd S 25 Vdc Drain-Gate Voltage VdG 25 Vdc Gate-Source Voltage VGS 25 Vdc Forward Gate Current

marking BJG sot-23

Abstract: MMBF5484LT1 wire wound IR source MARKING YG SOT-23
Contextual Info: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE M M B F 5 48 4L T 1 Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 Vdc v GS r 25 Vdc Forward Gate Current 'G(f) 10 mAdc

MMBF5459LT1

Contextual Info: MOTOROLA Order this document by MMBF5459LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor M M BF5459LT1 N-Channel 2 SOURCE MAXIMUM RATINGS Rating CASE 318-08, STYLE 10 SO T -23 TO-236AB Symbol Value Unit Vd G 25 Vdc VGS(r) -2 5 Vdc 'G 10 mAdc Symbol Max

mpf102

Abstract: mpf102 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N-Channel — Depletion MAXIMUM RATINGS Symbol Value VDS 25 Vdc Drain-Gate Voltage Vd G 25 Vdc Gate-Source Voltage Rating Drain-Source Voltage Unit vgs -2 5 Vdc Gate Current 'g 10 mAdc Total Device Dissipation @ Ta = 25°C

2N5454

Abstract: 2N5452-2N5454 2N5452 2N5453
Contextual Info: G E SOLID oí STATE i iF | B f l v s o f i l □ □ i a cn ? a ~ -17 2N5452-2N5454 2N5452-2N5454 Dual N-Channel JFET General Purpose Amplifier GENERAL DESCRIPTION FEATURES Matched FE T pairs for differential amplifiers. This family of general purpose FETs is characterized for low and medi­

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET C h o p p e r T ra n sisto r N-Channel — Depletion M AXIMUM RATINGS Rating D ra in -G a te Voltage G a te -S o u rce Voltage Symbol Value Unit VDG -3 5 Vdc VGS -3 5 Vdc Gate Current 'g 50 mAdc Total Device Dissipation @ Ta = 253C

S22G

Abstract: MMBF5484LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE M M B F5484LT1 M otorola Preferred D evice MAXIMUM RATINGS Rating % Symbol Value Unit VdG 25 Vdc VGS r 25 Vdc 'G(f) 10 mAdc 200 2.8 mW mW/°C 2 D rain-G ate Voltage Reverse G ate-Source Voltage

FU310

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET T ransistor MMBFU310LT1 N-Channel 2 SOURCE Motorola Preferred Device MAXIMUM RATINGS Rating 1 Symbol Value Unit D ra in -S o u rc e Voltage V DS 25 V dc G a te -S o u rc e Voltage Vg s 25 Vdc 'g 10 m A dc Symbol M ax