N-CHAN 20V Search Results

MUX pmi

Contextual Info: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEATURES • • • • • • • • JFET Switches Rather Than CMOS Low “O N ” Resistance . 220Ü Typ

Contextual Info: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 □ FEATURES • • • • • • • • JFET Switches Rather Than CMOS Low “O N ” Resistance . 220fl Typ

FRO 24N

Abstract: MUX24FQ x08A
Contextual Info: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEATURES • • • • • • • J F E T Sw itches Rather Than C M O S Low “ O N ” Resistance . 220Ü Typ

NTE1460

Abstract: NTE1458 RC network NTE1453
Contextual Info: N TE 1,43155=1 G005D a3 1 17E ELECTRONICS INC 2-CHANNEL LOW NOISE, EQUALIZER AMP, Vcc=30V AUDIO PWR AMP, 1W 14-LEAD DIP, SEE DIAG 247 NTE1451 7-LEAD SIP, SEE DIAG 215 NTE14S2 FRONT VIEW U Bypass— Chan 2 Input— RC N etw o rkBypass— Chan 2 O u tp u tFeedback—

FRO 24N

Abstract: 08EP UX-24 MUX24
Contextual Info: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEATURES • JFET Switches Rather Than CMOS • Low “ ON” Resistance . 220Ü Typ • Highly Resistant to Static Discharge Damage

MUX pmi

Abstract: LF11508 MUX24 pmi mux24 24ae pmi mux 08 AD7506 DG508 HI-508A HI-509A
Contextual Info: ► A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEATURES • • • • • • • JFET Switches Rather Than CMOS Low “ON” Resistance . 2200 Typ

pmi mux08

Abstract: MUX pmi UX-24 PMI MUX28 AD7506 DG508 DG509 HI-508A HI-509A IH6108
Contextual Info: A N A LO G D E V IC E S 8-Chan/Dual 4-Chan JFET Analog Multiplexers Overvoltage & Power Supply Loss Protected MUX-08/MUX-24 FEA TU R ES • • • • • • • J F E T Sw itches Rather Than C M O S Low “ O N ” Resistance . 220Ü Typ

HM-TR

Abstract: COP404C COP401L 881412 diode SKE 4F
Contextual Info: COP414L/COP314L 0 3 National S al Semiconductor COP414L/COP314L Single-Chip N-Channel Microcontrollers General Description Features The COP414L Sir>gle-Chip N-Channel Microcontrollers are members of the COPStm family, fabricated using N-chan­ nel, silicon gate MOS technology. This Controller Oriented

Contextual Info: Micmsemi m m m RF Products a P rogress Pow ered b y Te ch n olog y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROW AVE TR AN SISTORS HF/VHF/UHF N -CHAN N EL M OSFETS Features 2 - 400 MHz 30 WATTS 28 VOLTS

Contextual Info: MG150J7KS50 TOSHIBA MG1 50J7KS50 TO SH IBA GTR MODULE SILICON N CHAN N EL IGBT HIGH POW ER SW ITCHING APPLICATIO NS MOTOR CO N TRO L APPLICATIO NS The Electrodes are Isolated from Case. High Input Impedance 7 IGBTs B uilt into 1 Package. Enhancement-Mode H igh Speed Type IGBT Inverter Stage

Contextual Info: TOSHIBA M G800J1US51 TOSHIBA GTR MODULE SILICON N CHAN N EL IGBT MG 8 0 0 J 1 US51 HIGH POWER SW ITCHING APPLICATIO NS M OTOR CO N TRO L APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance • Enhancem ent-M ode • High Speed : t f= 0 .3 0 ,« s Max. ( Iç = 800A)

CT15SM-24

Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR ARY N I M I L CT15SM-24 . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som PRE GENERAL INVERTER • UPS USE CT15SM-24 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX.

p12n60c3

Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
Contextual Info: HARRIS HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the

Contextual Info: SM MN04L L20IS S Logic Le evel N-Ch Po ower MOSFE ET 200V LOGIC N-Chan nnel MOSFET Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=200 0V Min. • Low gate charge: c Qg=4nC (Typ.) • Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.) • 100% avala

5 watt hf mosfet

Contextual Info: • m m RF Products M ic m m s e m i P rogress Pow ered b y Te ch n olog y 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROW AVE TR AN SISTORS HF/VHF/UHF N -CHAN N EL M OSFETS Featuies 2 -1 7 5 MHz 30 WATTS

Contextual Info: HARRIS SENICOND SECTOR 3 MASS L.ÔE J> • i43G2271 0050201 bT7 H H A S HGTP12N60D1 12A, 600V N-Chan nel IG BT December 1993 Package Features • 12 Amp, 600 Volt JEDEC TO-220AB TOP VIEW • Latch Free Operation • Typical Fdll Time <500ns COLLECTOR FLANG E

FL12KM-7A

Contextual Info: MITSUBISHI POWER MOSFET ARY FL12KM-7A MIN RELI . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL12KM-7A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2

G6N50

Abstract: g6n50e
Contextual Info: HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HARRIS S E M I C O N D U C T O R 6A, 400V and 500V N-Chan nel IG BTs March 1997 Features Packages HG TD6N 40E1, HGTD6N50E1 JEDEC TO-2S1 AA • 6 A, 4 0 0 V a n d 5 0 0 V • V CE ON : 2 . 5 V M a x . E M IT T E R

PIC1650-020

Abstract: ER1400 equivalent ER1400 4-digit seven segment display pic 100x14 AY-3-2012 AY-3-8475 CT2012 CT2017 IN914
Contextual Info: INSTRUM ENT PIC1650-020 ER1400 Economega IV TV PPL Tuning System Control E R 1 4 0 0 • Autom atic S w eep Tuning Option (with Autom atic Fin e Tune) ■ Fin e Tun e in 5 0K H z S te p s ( Manual o r A utom atic) ■ T w o Digit Chan nel N um ber D isp lay

for1a

Abstract: 2SJ143 J22G
Contextual Info: N E C ELECTRONICS INC "tö deT| b 4 a ? 5 E S 3 | ~ 7 ^ —3 ^^-1 <J oonoTs P R E L I M I N A R Y S F E C IF IC A T iC ‘ MOS F I E L D E F F E C T T R A N S I S ELECTRON DEVICE 2 S J 1 4 3 F A S T S W I T C H I N G P - CHAN N EL S I L I C O N PO W ER PACKAGE DIM ENSION S

20ng0c3

Abstract: 20NG0 20n60c 20n60c3 20N60C3R 20n60c* equivalent TG20N60C3R 20N 443 20NG0C3R
Contextual Info: HARRIS S E M I C O N D U C T O R H G T G 2 0 N 6 0 C 3 R , H G T P 2 0 N 6 0 C 3 R , H G T 1 S 2 0 N 6 0 C 3 R , H G T 1 S 2 0 N 6 0 C 3 R S 40A, 600V, Ru gg ed UFS Series N-Chan nel IG BTs January 1997 F ea tu res Description • 40A, 600V T j = 2 5°C This family of IGBTs was designed for optimum performance

Contextual Info: SGS-THOMSON ¿57 ¡m e r a « VN370B TRIPLE CHANNEL HIGH SIDE SMART _POWER SOLID STATE RELAY TARGET DATA TYP E VN370B V dss 60V 60V 60V R D S o n lo U T channel 0.25 a 1.7 Q. 1.7 a 1A 0.3A 0.3A 2 3 1 . ONE 2.4A (MAX) CHANNEL . TWO 0.36A (MAX) CHANNELS

VN370SP

Contextual Info: SGS-THOMSON ilL d C T ^ O lO O i V N 3 7 0 S P TRIPLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE V dss R VN370SP 60V 60V 60V 0.25 a 1.7 Û 1.7 a d S o ii loUT channel 1A 0.3A 0.3A 1 2 3 . . . . . ONE 2.4A (MAX) CHANNEL TWO 0.36A (MAX) CHANNELS

VN370SP

Contextual Info: VN370SP TRIPLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE V DSS R DS on I OUT channel VN370SP 60V 60V 60V 0.25 Ω 1.7 Ω 1.7 Ω 1A 0.3A 0.3A 1 2 3 • ■ ■ ■ ■ ■ ■ ONE 2.4A (MAX) CHANNEL TWO 0.36A (MAX) CHANNELS THREE TTL INPUTS