N MOSFET 1400 V Search Results

9n160g

Abstract: IXBH 9N160G D-68623 ixbh9n160g 9N140G
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140G IXBH 9N160G N-Channel, Enhancement Mode MOSFET compatible C VCES IC25 VCE sat tfi = = = = 1400/1600 V 9A 4.9 V typ. 70 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Preliminary Data

MRF6V10010NR4

Abstract: AN1955 d2460 A03TK
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

MMRF1019NR4

Contextual Info: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

cree rf

Abstract: UPF14060 UPF14060F UPF14060P
Contextual Info: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in

Contextual Info: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in

MRF6V10010

Abstract: MRF6V10010NR4 KEMET C1206C104K5RACTR AN1955 ATC100B470JT500XT FREESCALE PACKING A113 A114 A115 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 2, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 3, 7/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

F35V

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

transistor equivalent table c101

Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for

FS12UM-5

Abstract: FS12KM MARKING CODE mosfet FS16UM5 FS20KM-6 FS12KM-5 FS20UM-5 FS10UM-5 FS16KM-5 FS10KM-5
Contextual Info: K O N f llO r Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o r t FO D TI D & t3 Selector Guide Discrete MOSFET - Medium Voitage FS Series MOSFETs (250 ~ 450V) Electrical Characteristics Maximum Ratings, Tc = 25°C

IXAN0014

Abstract: 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements
Contextual Info: Technical Application IXAN0014 Comparative Performance of BIMOSFETs in Fly-Back Converter Circuits One of the typical applications for a flyback converter is the auxiliary power supply for the IGBT gate driver in an inverter. The essential requirement for a switch of a flyback converter in a drives inverter is a high breakdown voltage combined with fast

NX3008NBKMB

Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

2SJ235

Abstract: 2sk1299 2SJ182 2SJ244 2SJ250 2SK1336 2SK1337 2SK1579 2SK1697 2SK1698
Contextual Info: 8 1.5.3 HITACHI DlII-Series DIII-L Series Low Voltage Range, VDSS up to 120V The third generation of D-Series MOSFETs from Hitachi benefits from the latest development in Power MOSFET technology. The low voltage range of DIH-Series MOSFETs has the following enhanced features:-

BSS84AKS

Abstract: PHB27NQ10T BUK9575-100A BSS138p infineon PSMN1R5-40 LFPAK footprint Renesas PSMN013-100ES SOT323 MOSFET PH BUK95180-100A NX3008
Contextual Info: Power MOSFET Selection Guide 2012 Smaller, faster, cooler 2 Table of contents 20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 9

2SK44

Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Contextual Info: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be

DIN970

Abstract: 1500-0075X2 ZY180L ZY180R
Contextual Info: VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75 V ID25 = 1450 A RDS on = 0.38 mΩ Phaseleg Configuration 8 9 2 3 11 10 9 8 1 11 10 2 Features MOSFET T1 + T2 Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C VGS 75 V ± 20 V TC = 25°C TC = 80°C j

mosfet fs series

Abstract: TO-3P
Contextual Info: •NEW HIGH VOLTAGE POWER MOSFET FS SERIES CONTINUED IBUILT-IN HIGH SPEED DIODE POWER MOSFET FK SERIES Electrical characteristics (TYP.) Max. ratings Type No. V « {¥> iß w FK16UM-5 ★ FKI6VS-5 ★ FKI6KM -5 ★ FK16SM-5 ★ FK20UM-5 ★ FK20VS-5 ■

2sk1299

Abstract: 2SK1763 2SK1878 2sj177 2SJ295 2SK1579 TO220FM 2SJ244 2sj235 2SJ246
Contextual Info: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D-IV L Series Item Package

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SK1778

Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SK1151 2SK1152 2SJ175 2SK579
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. Hitachi's range of devices offers these

PSMN015-60PS

Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
Contextual Info: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

fs12km5

Abstract: FS12UM-5 FS12KM FS10KM5 FS12KM-5 FS20KM-6 FS12UM fs20km-5 POWEREX mosfet fs series
Contextual Info: A p p lÌC 3 tÌ0 n Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Medium Voltage FS Series MOSFETs (250 ~ 450V) Maximum Ratings, Tc = 25°C Electrical Characteristics Device VDss •d PD

2SK1778

Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2sj177

Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be