N CHANNEL SOT23 Search Results

A12 marking

Abstract: A12S MARKING A12 SOT-23 n-channel SOT-89 P-channel A12 s M/TOREX MARKING RULE
Contextual Info: XP13/15/16 Series •MARKING RULE ① Represents channel and product group MARK CHANNEL/PRODUCT GROUP ●XP13x Series 1 2 3 4 5 ①②③ N-Channel, Single P-Channel, Single N-Channel, Dual P-Channel, Dual N-Channel, P-Channel, Complementary ②,③ Represents Product number

MOSFET P-channel SOT-23

Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
Contextual Info: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs

BSR56

Contextual Info: DISCRETE SEMICONDUCTORS DAT BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel

MBK288

Abstract: PMBF4393 PMBF4391 PMBF4392
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel

BSR58

Abstract: BSR56 BSR57 sot23 marking code
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel

PMBF4391

Abstract: PMBF4392 PMBF4393 MBK288
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification April 1995 NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect

BF511

Abstract: Bf513
Contextual Info: DISCRETE SEMICONDUCTORS DAT BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect

mosfet vgs 5v

Abstract: mosfet vgs 5v SOT23 MOSFET 2KV MOSFET SOT-23 C7003 VGS-12V MARKING CODE 24 TRANSISTOR mosfet low vgs MARKING CODE 16 transistor sot23 10mhz mosfet
Contextual Info: CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed

marking code SS SOT23 MOSFET DRIVER

Abstract: marking code SS SOT23 transistor
Contextual Info: Central CMPDM7002A Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel

Bft46

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic

Contextual Info: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a

BF510

Abstract: BF511 BF512 BF513
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect

z418.2dpf.s20v

Abstract: S/sot-23 MARKING CODE 70.2
Contextual Info: Central 2 N 7 00 2 Sem iconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

CRS15

Abstract: BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect

CRS15

Abstract: BFT46
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic

12w SOT 23 package marking code

Abstract: 12w marking code sot 23 LTC1407A-1 LTC2351I-12 ltc2351-12 32-PIN LTC2351C-12 LTC2351H-12 LTC2351HUH-12 LTC1609
Contextual Info: LTC2351-12 6 Channel, 12-Bit, 1.5Msps Simultaneous Sampling ADC With Shutdown DESCRIPTION FEATURES n n n n n n n n n n n n n 1.5Msps ADC with 6 Simultaneously Sampled Differential Inputs 250ksps Throughput per Channel 72dB SINAD Low Power Dissipation: 16.5mW

LTC2351I-14

Abstract: LTC2351-14
Contextual Info: LTC2351-14 6-Channel, 14-Bit, 1.5Msps Simultaneous Sampling ADC with Shutdown DESCRIPTION FEATURES n n n n n n n n n n n n n 1.5Msps ADC with Six Simultaneously Sampled Differential Inputs 250ksps Throughput per Channel 75dB SINAD Low Power Dissipation: 16.5mW

LTC2351H-14

Abstract: 32-PIN LTC2351-14 LTC2351C-14 LTC2351CUH-14 LTC2351HUH-14 LTC2351I-14 LTC2351IUH-14 Marking code 12w SOT-23
Contextual Info: LTC2351-14 6-Channel, 14-Bit, 1.5Msps Simultaneous Sampling ADC with Shutdown DESCRIPTION FEATURES n n n n n n n n n n n n n 1.5Msps ADC with Six Simultaneously Sampled Differential Inputs 250ksps Throughput per Channel 75dB SINAD Low Power Dissipation: 16.5mW

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFR30; BFR31 N-channel field-effect transistors Product specification Supersedes data of April 1991 1997 Dec 05 NXP Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel

MAX1614EUA

Abstract: MAX1614
Contextual Info: 19-1176; Rev 0; 12/96 High-Side, N-Channel MOSFET Switch Driver _Features The MAX1614 drives high-side, N-channel power MOSFETs to provide battery power-switching functions in portable equipment. N-channel power MOSFETs typically have

Contextual Info: MAX1614 High-Side, n-Channel MOSFET Switch Driver LE AVAILAB _General Description _Features The MAX1614 drives high-side, n-channel power MOSFETs to provide battery power-switching functions in portable equipment. The n-channel power MOSFETs typically have

12v battery protection from deep discharge

Abstract: MAX1614 MAX1614EUA
Contextual Info: 19-1176; Rev 0; 12/96 High-Side, N-Channel MOSFET Switch Driver _Features The MAX1614 drives high-side, N-channel power MOSFETs to provide battery power-switching functions in portable equipment. N-channel power MOSFETs typically have

Contextual Info: Centrali TM CMPDM7002A Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEM ICO NDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel

702 mosfet

Abstract: code 702 MARKING CODE 702 702 TRANSISTOR sot-23 702 sot 23 RG 702 Diode 2N7002 MARKING 702 marking 702 sot23 SOT23 transistor 702 702 SOT-23
Contextual Info: Central 2N7002 TM Semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.