N CHANNEL J FET Search Results

Contextual Info: NEC NEC Electronics Inc. D e scrip tio n /¿PC356 J-FET INPUT OPERATIONAL AMPLIFIER Pin C o n figu ratio n The juPC356 is a J -F E T input operational amplifier with matched P-channel ion implanted J -F E T s. In addition to the obvious advantages of J -F E T inputs, the //PC356 is

Contextual Info: \v jì il }\ \\ n a il il vi n /± ± \ il /±±\ il u Æ w txon m mmmm / j u ,- i i _ DEVICES. INC. N-CHANNEL ENHANCEMENT MOS FET 100V. 9.2A, SDF120 SDF120 SDF120 0.2 7 n PARAMETER JAA JAB JDA FEATURES • • •

TC-2394

Abstract: transistor D 2394 nec 2501 PT-235 2SK1295 MEI-1202 TEA-1035 nec 2702
Contextual Info: DATA SHEET NEC J HMOS FIELD EFFECT POWER TRANSISTOR 2SK1295 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1295 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.

A2147

Abstract: 2sk109
Contextual Info: 2SK1098-MR FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET p j j SERIES j • Outline Drawings ■ Features • H ich current • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High forw ard T ran sco n d u ctan ce

SIPMOS

Abstract: 2SK1509
Contextual Info: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce

Contextual Info: BF410A to D _ J\ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.

BFW61

Contextual Info: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA

J112

Abstract: J113 J111 transistor J112 Scans-00946
Contextual Info: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

Contextual Info: 2N4856 to 4861 J V_ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching, applications in industrial service.

2SK1282

Abstract: A 1282 transistor TC-2381 MEI-1202 TEA-1035
Contextual Info: DATA SHEET NEC J MOS FIELD EFFECT POWER TRANSISTOR 2SK1282,1282-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1282/1282-Z is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance

BUK617-500AE

Abstract: TRANSISTOR C 557 B TIC 136 Transistor
Contextual Info: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

nec 7915

Abstract: LF356 equivalent L9810 7915 pin configuration PC356 LF356 RS 7915 7915 nec
Contextual Info: N E C ELECTRONI CS 6427525 N E C I NC öl E LECTRONICS I>e | b427SSS O O lC m ^ 81C 10093 INC NEC Electronics Inc. _ ' The //PC356 is a J-FET input operational am plifier with matched P-channel ion implanted J-FETs. In addition to

IMF6485

Abstract: TO71 fet
Contextual Info: IM F6485 Low Noise Dual Monolithic N-Channel J F E T FEATURES GENERAL DESCRIPTION • ê n < 10nV/vHz @ 10Hz This N-Channel Junction FET is characterized fo r ultra low noise applications requiring tig h tly co n trolled and speci­ fied noise parameters at 10 Hz and 1000 Hz. T ig h t match­

TA 8783 N

Abstract: pin IC 8783 n ss 7941 941L
Contextual Info: TELEDYNE COMPONENTS 2flE D • fl^Ji7bQH QQQb471 'J J B lT F l CD II ^ J s £ \ ^Z . VN0104, VN0106 SEMICONDUCTOR_VNOIQ9 N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs T‘ *7' u ORDERING INFORMATION TO-226AA TO-92 Plastic Package Sorted Chips In Waffle Pack

c185 transistor

Abstract: 2SK293 3e tRANSISTOR K293A 8115, transistor C14A k293 2SK293A T108 TS33
Contextual Info: NEC j m + T / Y t x $ s i j u > s < r7 — Y 7 .9 S ilico n P o w e r T ra n s is to r A 2SK293,293A FET ¡S liJE iM J S ^ f S a f e X 'r N-channel M O S Field Effect Pow er Transistor High Voltage, High Speed, High Current Switching High Reliavility Industrial Use

ITK 2-1

Abstract: 2SK1099 schematic symbols UPS TCA 430
Contextual Info: 2SK1099 S I P M O S ^ i'^ - M O S - F E T N ? * * ;t^ < 7 - M O S-FET F-I SERIES ro > N-CHANNEl SILICON POWER MOS-FET : Features : Outline Drawings H igh speed switching Low on-resisiance N o secondary breakdown • D U J j^ iV ' •f t H i g Low driving powe<

Contextual Info: O rd e rin g n u m b er: E N 4 5 0 2 _ 2SK1961 No.4502 J N-Channel J unction Silicon FET S A \Y O High-Frequency Low-Noise Amp Applications A pplications • High-frequency low-noise amp applications. Features • Adoption of FBET process • Large I Yfg I

BFW 10 fet

Contextual Info: BFW12 BFW13 J V N-CHANNEL SILICON FETS Sym m etrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended for battery powered equipment and other low current-low voltage applications.

2SK1814

Abstract: ss 211 P channel MOSFET 10A schematic
Contextual Info: 2SK1814 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features j j SER IES j O utline D raw ings • High current • Low no-resistance • No secondary breakdow n • Low driving p o w er • High fo rw ard T ran scon d u ctan ce

2SJ82

Abstract: 2sj83 2SJ81 hitachi 2SJ82 2sk134 2sk135 2SK226 2SK225 hitachi 2sk227 2sk1
Contextual Info: 2SK225.2SK226.2SK227 y U - F E T S IL IC O N N-CHANNEL ENHANCEMENT M O S FET LOW FREQUENCY POWER AMPLIFIER C om plem en tary p air w ith 2 S J 8 1 ,2 S J 8 2 and 2S J83 2 S J 81, 2 S J 8 2 , 2 S J 8 3 ¿ a > 7° U * > £ U^T 7 1. 2. Y — Y Gate V — X S o u rc e

tl084 replacement

Contextual Info: SE C N E C Electronics Inc. Description ¿/PC4084 QUAD J-FET INPUT OPERATIONAL AMPLIFIER Pin Configuration The ¡jPC4084 offers four operational amplifiers with matched ion implanted P-channel J-FET inputs with standard bipolar technology in a single 14 pin DIP.

BFQ10

Contextual Info: PHILIPS INTERNATIONAL MIE J> WB 711002b 002b51S S Ö P H I N BFQ10 to 16 T -2 7 -2 7 — DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, with electrically insulated gates and a common substrate connected to the envelope; intended

JR 3610

Abstract: 4080M3
Contextual Info: TELEDYNE COMPONENTS m eöE D öTl TbQ S ÜOGbms T _ ü r - j j t - z- ^ SD1122 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION Sorted Chips in Waffle Pack TO-226AA TO-92 Pda-Lead Formed