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    N CHANNEL J FET Search Results

    N CHANNEL J FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    IH5012CDE
    Rochester Electronics LLC IH5012 - SPST, 4 Func, 1 Channel, CDIP16 PDF Buy
    IH5012MDE/B
    Rochester Electronics LLC IH5012 - SPST, 4 Func, 1 Channel PDF Buy
    DG188AA
    Rochester Electronics LLC DG188A - SPDT, 1 Func, 1 Channel, MBCY10 PDF Buy
    PEF24628EV1X
    Rochester Electronics LLC PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip PDF
    PQU650-12P
    Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P PDF

    N CHANNEL J FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: \v jì il }\ \\ n a il il vi n /± ± \ il /±±\ il u Æ w txon m mmmm / j u ,- i i _ DEVICES. INC. N-CHANNEL ENHANCEMENT MOS FET 100V. 9.2A, SDF120 SDF120 SDF120 0.2 7 n PARAMETER JAA JAB JDA FEATURES • • •


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    SDF120 SDF120 PDF

    SIPMOS

    Abstract: 2SK1509
    Contextual Info: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce


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    2SK1509 03j6T O-22QAB SC-46 SIPMOS PDF

    J112

    Abstract: J113 J111 transistor J112 Scans-00946
    Contextual Info: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features


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    711002b 0Clb7cl75 3150S2 J112 J113 J111 transistor J112 Scans-00946 PDF

    Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


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    T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T PDF

    Contextual Info: 2N4856 to 4861 J V_ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching, applications in industrial service.


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    2N4856 2N4858 2N4861 2N4857 2N4860 2N4856 2N4859 PDF

    BUK617-500AE

    Abstract: TRANSISTOR C 557 B TIC 136 Transistor
    Contextual Info: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode


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    7110a5t. BUK617-500AE/BE OT227B BUK617 -500AE BUK617-500AE BUK617-500AE TRANSISTOR C 557 B TIC 136 Transistor PDF

    nec 7915

    Abstract: LF356 equivalent L9810 7915 pin configuration PC356 LF356 RS 7915 7915 nec
    Contextual Info: N E C ELECTRONI CS 6427525 N E C I NC öl E LECTRONICS I>e | b427SSS O O lC m ^ 81C 10093 INC NEC Electronics Inc. _ ' The //PC356 is a J-FET input operational am plifier with matched P-channel ion implanted J-FETs. In addition to


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    b427SSS uPC356 M2752S nec 7915 LF356 equivalent L9810 7915 pin configuration PC356 LF356 RS 7915 7915 nec PDF

    IMF6485

    Abstract: TO71 fet
    Contextual Info: IM F6485 Low Noise Dual Monolithic N-Channel J F E T FEATURES GENERAL DESCRIPTION • ê n < 10nV/vHz @ 10Hz This N-Channel Junction FET is characterized fo r ultra low noise applications requiring tig h tly co n trolled and speci­ fied noise parameters at 10 Hz and 1000 Hz. T ig h t match­


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    10nV/VHT@ 40MV/Â IMF6485 10sec. IMF6485 TO71 fet PDF

    TA 8783 N

    Abstract: pin IC 8783 n ss 7941 941L
    Contextual Info: TELEDYNE COMPONENTS 2flE D • fl^Ji7bQH QQQb471 'J J B lT F l CD II ^ J s £ \ ^Z . VN0104, VN0106 SEMICONDUCTOR_VNOIQ9 N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs T‘ *7' u ORDERING INFORMATION TO-226AA TO-92 Plastic Package Sorted Chips In Waffle Pack


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    QQQb471 VN0104, VN0106 O-226AA VN0104N3 VN0104ND VN0106N3 VN0106ND VN0109N& VN0109ND TA 8783 N pin IC 8783 n ss 7941 941L PDF

    ITK 2-1

    Abstract: 2SK1099 schematic symbols UPS TCA 430
    Contextual Info: 2SK1099 S I P M O S ^ i'^ - M O S - F E T N ? * * ;t^ < 7 - M O S-FET F-I SERIES ro > N-CHANNEl SILICON POWER MOS-FET : Features : Outline Drawings H igh speed switching Low on-resisiance N o secondary breakdown • D U J j^ iV ' •f t H i g Low driving powe<


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    2SK1099 ITK 2-1 2SK1099 schematic symbols UPS TCA 430 PDF

    Contextual Info: O rd e rin g n u m b er: E N 4 5 0 2 _ 2SK1961 No.4502 J N-Channel J unction Silicon FET S A \Y O High-Frequency Low-Noise Amp Applications A pplications • High-frequency low-noise amp applications. Features • Adoption of FBET process • Large I Yfg I


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    2SK1961 PDF

    BFW 10 fet

    Contextual Info: BFW12 BFW13 J V N-CHANNEL SILICON FETS Sym m etrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended for battery powered equipment and other low current-low voltage applications.


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    BFW12 BFW13 003S7A4 bb53T31 BFW 10 fet PDF

    2SK1814

    Abstract: ss 211 P channel MOSFET 10A schematic
    Contextual Info: 2SK1814 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features j j SER IES j O utline D raw ings • High current • Low no-resistance • No secondary breakdow n • Low driving p o w er • High fo rw ard T ran scon d u ctan ce


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    2SK1814 O-220AB SC-46 00A/yus A2-242 ss 211 P channel MOSFET 10A schematic PDF

    2SJ82

    Abstract: 2sj83 2SJ81 hitachi 2SJ82 2sk134 2sk135 2SK226 2SK225 hitachi 2sk227 2sk1
    Contextual Info: 2SK225.2SK226.2SK227 y U - F E T S IL IC O N N-CHANNEL ENHANCEMENT M O S FET LOW FREQUENCY POWER AMPLIFIER C om plem en tary p air w ith 2 S J 8 1 ,2 S J 8 2 and 2S J83 2 S J 81, 2 S J 8 2 , 2 S J 8 3 ¿ a > 7° U * > £ U^T 7 1. 2. Y — Y Gate V — X S o u rc e


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    2SK225 2SK226 2SK227 2SJ81, 2SJ82 2SJ832S 2SK227 2sj83 2SJ81 hitachi 2SJ82 2sk134 2sk135 hitachi 2sk227 2sk1 PDF

    BFQ10

    Contextual Info: PHILIPS INTERNATIONAL MIE J> WB 711002b 002b51S S Ö P H I N BFQ10 to 16 T -2 7 -2 7 — DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, with electrically insulated gates and a common substrate connected to the envelope; intended


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    711002b 002b51S BFQ10 002b22ü Q02b221 PDF

    JR 3610

    Abstract: 4080M3
    Contextual Info: TELEDYNE COMPONENTS m eöE D öTl TbQ S ÜOGbms T _ ü r - j j t - z- ^ SD1122 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION Sorted Chips in Waffle Pack TO-226AA TO-92 Pda-Lead Formed


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    SD1122 O-226AA SDTI22CHP SD1122BD JR 3610 4080M3 PDF

    Contextual Info: N AMER PHILIPS/DISCRETE n r •' btS3T31 Q017257•1 ■ * 2SE D BSJ174 TO 177 T - 3 7 -3 5 " J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application with anarog switches, choppers, commutators etc.


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    btS3T31 Q017257â BSJ174 BSJ175 BSJ176 BSJ177 PDF

    Contextual Info: Ordering number : ENN6962 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5902 ISMlYOi High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features Package Dimensions • Composite type with J- F E T and N P N transistors


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    ENN6962 CPH5902 CPH5902] CPH5902 2SK2394-equivalent 2SC4639-equivalent PDF

    Contextual Info: S j l i r z J r r : m m m m tß iw itfuw i ' | VN0545 VN0550 r\ » N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^D S O N ^D(ON) b v dgs (max) (min) TO-39 TO-92 Dice+ 450V 60Q 150mA VN0545N2 VN0545N3 VN0545ND


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    VN0545 VN0550 VN0545N2 VN0550N2 150mA 150mA VN0545N3 VN0550N3 VN0545ND VN0550ND PDF

    gs 05 24 gd 2

    Abstract: SST211 SST213
    Contextual Info: FAST DMOS FET Switches N-Channel Enhancement-Mode C Q IO O IC \J CORPORATION SST211 /SST213/SST215 DESCRIPTION FEATURES • • • • • High Speed Switching. t d O N 1ns Low C apacitance. 2.4pF typical


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    SST211 /SST213/SST215 SST213 SST215 XSST211 SD211-215 gs 05 24 gd 2 PDF

    rc1F

    Contextual Info: 2SK1942-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-HA SERIES • Features ■ Outline Drawings • High speed sw itching • L j w o n -re s is ta n c e • No second ary breakdow n • L j w d riv in g p o w e r • H igh voltage • V CS = ± 3 0 V Guarantee


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    2SK1942-01 20Kil) rc1F PDF

    2SJ331

    Abstract: T120 Switch MEI-1202 TEA-1035 2SJ33
    Contextual Info: DATA SHEET NEC - f t P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR _ f 2SJ331 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2S J 33 1 is P -ch an n el M O S Field E ffect T ra n s is to r d e ­ PACKAGE DIMENSIONS


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    2SJ331 2SJ331 IEI-1209) T120 Switch MEI-1202 TEA-1035 2SJ33 PDF

    IRHN7450SE

    Contextual Info: | p j j -0 p p q j-j q p q | Provisional Data Sheet No. PD-9.1313A I R Rectifier IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD 500 Volt, 0.51 Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology


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    IRHN7450SE IRHN7450SE PDF

    Contextual Info: Panasonic Pow er F-M OS FETs 2SK1980 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 15mJ • Vgss=±30V guaranteed IF • High-speed switching : t|= 25ns • No secondary breakdown tntr. J^L J 1,5max.


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    2SK1980 capacitanS55' PDF