N CHANNEL J FET Search Results

Contextual Info: \v jì il }\ \\ n a il il vi n /± ± \ il /±±\ il u Æ w txon m mmmm / j u ,- i i _ DEVICES. INC. N-CHANNEL ENHANCEMENT MOS FET 100V. 9.2A, SDF120 SDF120 SDF120 0.2 7 n PARAMETER JAA JAB JDA FEATURES • • •

SIPMOS

Abstract: 2SK1509
Contextual Info: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce

J112

Abstract: J113 J111 transistor J112 Scans-00946
Contextual Info: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

Contextual Info: 2N4856 to 4861 J V_ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching, applications in industrial service.

BUK617-500AE

Abstract: TRANSISTOR C 557 B TIC 136 Transistor
Contextual Info: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode

nec 7915

Abstract: LF356 equivalent L9810 7915 pin configuration PC356 LF356 RS 7915 7915 nec
Contextual Info: N E C ELECTRONI CS 6427525 N E C I NC öl E LECTRONICS I>e | b427SSS O O lC m ^ 81C 10093 INC NEC Electronics Inc. _ ' The //PC356 is a J-FET input operational am plifier with matched P-channel ion implanted J-FETs. In addition to

IMF6485

Abstract: TO71 fet
Contextual Info: IM F6485 Low Noise Dual Monolithic N-Channel J F E T FEATURES GENERAL DESCRIPTION • ê n < 10nV/vHz @ 10Hz This N-Channel Junction FET is characterized fo r ultra low noise applications requiring tig h tly co n trolled and speci­ fied noise parameters at 10 Hz and 1000 Hz. T ig h t match­

TA 8783 N

Abstract: pin IC 8783 n ss 7941 941L
Contextual Info: TELEDYNE COMPONENTS 2flE D • fl^Ji7bQH QQQb471 'J J B lT F l CD II ^ J s £ \ ^Z . VN0104, VN0106 SEMICONDUCTOR_VNOIQ9 N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs T‘ *7' u ORDERING INFORMATION TO-226AA TO-92 Plastic Package Sorted Chips In Waffle Pack

ITK 2-1

Abstract: 2SK1099 schematic symbols UPS TCA 430
Contextual Info: 2SK1099 S I P M O S ^ i'^ - M O S - F E T N ? * * ;t^ < 7 - M O S-FET F-I SERIES ro > N-CHANNEl SILICON POWER MOS-FET : Features : Outline Drawings H igh speed switching Low on-resisiance N o secondary breakdown • D U J j^ iV ' •f t H i g Low driving powe<

Contextual Info: O rd e rin g n u m b er: E N 4 5 0 2 _ 2SK1961 No.4502 J N-Channel J unction Silicon FET S A \Y O High-Frequency Low-Noise Amp Applications A pplications • High-frequency low-noise amp applications. Features • Adoption of FBET process • Large I Yfg I

BFW 10 fet

Contextual Info: BFW12 BFW13 J V N-CHANNEL SILICON FETS Sym m etrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes w ith the shield lead connected to the case. The transistors are intended for battery powered equipment and other low current-low voltage applications.

2SK1814

Abstract: ss 211 P channel MOSFET 10A schematic
Contextual Info: 2SK1814 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features j j SER IES j O utline D raw ings • High current • Low no-resistance • No secondary breakdow n • Low driving p o w er • High fo rw ard T ran scon d u ctan ce

2SJ82

Abstract: 2sj83 2SJ81 hitachi 2SJ82 2sk134 2sk135 2SK226 2SK225 hitachi 2sk227 2sk1
Contextual Info: 2SK225.2SK226.2SK227 y U - F E T S IL IC O N N-CHANNEL ENHANCEMENT M O S FET LOW FREQUENCY POWER AMPLIFIER C om plem en tary p air w ith 2 S J 8 1 ,2 S J 8 2 and 2S J83 2 S J 81, 2 S J 8 2 , 2 S J 8 3 ¿ a > 7° U * > £ U^T 7 1. 2. Y — Y Gate V — X S o u rc e

BFQ10

Contextual Info: PHILIPS INTERNATIONAL MIE J> WB 711002b 002b51S S Ö P H I N BFQ10 to 16 T -2 7 -2 7 — DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, with electrically insulated gates and a common substrate connected to the envelope; intended

JR 3610

Abstract: 4080M3
Contextual Info: TELEDYNE COMPONENTS m eöE D öTl TbQ S ÜOGbms T _ ü r - j j t - z- ^ SD1122 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS POWER FETS ORDERING INFORMATION Sorted Chips in Waffle Pack TO-226AA TO-92 Pda-Lead Formed

Contextual Info: N AMER PHILIPS/DISCRETE n r •' btS3T31 Q017257•1 ■ * 2SE D BSJ174 TO 177 T - 3 7 -3 5 " J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application with anarog switches, choppers, commutators etc.

Contextual Info: Ordering number : ENN6962 NPN Epitaxial Planar Silicon Transistor N-Channel Silicon Junction FET CPH5902 ISMlYOi High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features Package Dimensions • Composite type with J- F E T and N P N transistors

Contextual Info: S j l i r z J r r : m m m m tß iw itfuw i ' | VN0545 VN0550 r\ » N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^D S O N ^D(ON) b v dgs (max) (min) TO-39 TO-92 Dice+ 450V 60Q 150mA VN0545N2 VN0545N3 VN0545ND

gs 05 24 gd 2

Abstract: SST211 SST213
Contextual Info: FAST DMOS FET Switches N-Channel Enhancement-Mode C Q IO O IC \J CORPORATION SST211 /SST213/SST215 DESCRIPTION FEATURES • • • • • High Speed Switching. t d O N 1ns Low C apacitance. 2.4pF typical

rc1F

Contextual Info: 2SK1942-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-HA SERIES • Features ■ Outline Drawings • High speed sw itching • L j w o n -re s is ta n c e • No second ary breakdow n • L j w d riv in g p o w e r • H igh voltage • V CS = ± 3 0 V Guarantee

2SJ331

Abstract: T120 Switch MEI-1202 TEA-1035 2SJ33
Contextual Info: DATA SHEET NEC - f t P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR _ f 2SJ331 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2S J 33 1 is P -ch an n el M O S Field E ffect T ra n s is to r d e ­ PACKAGE DIMENSIONS

IRHN7450SE

Contextual Info: | p j j -0 p p q j-j q p q | Provisional Data Sheet No. PD-9.1313A I R Rectifier IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD 500 Volt, 0.51 Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology

Contextual Info: Panasonic Pow er F-M OS FETs 2SK1980 Silicon N-Channel Power F-MOS U nit : mm • Features • Avalanche energy capability guaranteed : EAS > 15mJ • Vgss=±30V guaranteed IF • High-speed switching : t|= 25ns • No secondary breakdown tntr. J^L J 1,5max.