G0B42 Search Results

BUK582-100A

Abstract: 2T3 transistor
Contextual Info: PHILIPS INTERNATIONAL bSE J> • 711Ga2b G0b42û4 LSÔ « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: I i .•_ I PRELIMINARY International I R Rectifier P D 9 .1 3 8 5 IRF5305 HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Vdss = -55 V

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ^PD 431009 is a high speed, low pow er, 1 179 072 bits 131 072 w o rd s by 9 bits C M O S static RAM. The ¿iPD431009 is packed in 36-pin plastic SOJ.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¡1PD434008 4M-BIT CMOS FAST STATIC RAM 512K-WORD BY 8 BITS D e s c rip tio n The juPD434008 is a high speed, low pow er, 4 194 304 bits 524 288 w ords by 8 bits C M O S static RAM . The /jP D 434008 is packed in 36-pin plastic SOJ.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _//PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The ¿¿PD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits C M OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.