N CHANNEL 600V 8A Search Results

4a 400V ultra fast diode d2pak

Abstract: GPL6NC60D STGBL6NC60D STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGFL6NC60D STGPL6NC60D GFL6NC60D
Contextual Info: STGBL6NC60D - STGDL6NC60D STGFL6NC60D - STGPL6NC60D N-channel 600V - 6A - DPAK / D2PAK / TO-220 / TO-220FP Hyper fast IGBT Features Type VCES IC @100°C STGBL6NC60D STGDL6NC60D STGPL6NC60D STGFL6NC60D 600V 600V 600V 600V 8A 7A 8A 4A • Very high frequency operation

gp8nc60

Contextual Info: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)

GP8NC60KD

Abstract: gp8nc60 gd8nc60kd STGP8NC60KD GB8NC60KD
Contextual Info: STGB8NC60KD - STGD8NC60KD STGP8NC60KD N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60KD 600V 2.2V 8A STGD8NC60KD 600V 2.2V 8A STGP8NC60KD 600V 2.2V 8A • Lower on voltage drop (Vcesat)

gp8nc60

Abstract: GD8NC60K GB8NC60K STGP8NC60K GP8NC60K JESD97 STGB8NC60K STGD8NC60K
Contextual Info: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)

Contextual Info: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated

B8NM60D

Abstract: JESD97 STB8NM60D STP8NM60D ZVS phase-shift converters
Contextual Info: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated

Contextual Info: FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQPF8N60C equivalent

Abstract: FQPF8N60C FQP8N60C
Contextual Info: FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

8n60c

Contextual Info: TM FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

*p8n60

Contextual Info: TAK CHEONG N-Channel Power MOSFET 8A, 600V, 1.0Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state

FQB8N60C

Abstract: FQI8N60C
Contextual Info: TM FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

8N60C

Abstract: 8N60CT FQPF8N60CT FAN7602 FQPF8N60CYDTU FQPF8N60C AN-6014 FQPF Series
Contextual Info: FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

fqpf8n60c

Abstract: FQPF Series FQP8N60C mosfet fqpf8n60c
Contextual Info: TM FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

8n60c

Abstract: SVDF8N60c
Contextual Info: TM FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Electronic Lamp Ballasts

Abstract: DB201
Contextual Info: TAK CHEONG N-Channel Power MOSFET 8A, 600V, 1.15Ω 1 = Gate 2 = Drain 3 = Source 1 GENERAL DESCRIPTION 2 The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced

FQB8N60C

Abstract: FQI8N60C
Contextual Info: QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

F8N60

Abstract: p8n60 *p8n60 8n60 MOSFET 40A 600V PJF8N60
Contextual Info: PJP8N60 / PJF8N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS ON =1.2Ω@VGS=10V, ID=4.0A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

STP8NM60

Contextual Info: STP8NM60 N-CHANNEL 600V - 0.9Ω - 8A TO-220 MDmesh Power MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP8NM60 600V < 1Ω 8A TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

Contextual Info: STP8NM60 N-CHANNEL 600V - 0.9Ω - 8A TO-220 MDmesh Power MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP8NM60 600V < 1Ω 8A TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

Contextual Info: STP8NM60 N-CHANNEL 600V - 0.9Ω - 8A TO-220 MDmesh Power MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP8NM60 600V < 1Ω 8A TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

STW16NB60

Contextual Info: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STW16NB60

Contextual Info: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

mosfet p 30v 8a

Abstract: STW16NB60
Contextual Info: STW16NB60 N-CHANNEL 600V - 0.3Ω - 16A TO-247 PowerMesh MOSFET TYPE STW16NB60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.35 Ω 16 A TYPICAL RDS(on) = 0.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

Contextual Info: KSM8N60C/KSMF8N60C 600V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 7.5A, 600V, RDS on = 1.2Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description