N 449 Search Results
N 449 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
1N4494
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SUNMATE electronic Co., LTD | Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and operating junction temperature from -65 to +175°C. | Original | ||||
1N4490
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SUNMATE electronic Co., LTD | Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. | Original | ||||
1N4496
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SUNMATE electronic Co., LTD | Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and operating junction temperature from -65 to +175°C.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA. | Original | ||||
1N4491
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SUNMATE electronic Co., LTD | Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. | Original | ||||
1N4495
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SUNMATE electronic Co., LTD | Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. | Original | ||||
1N4492
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SUNMATE electronic Co., LTD | Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. | Original | ||||
1N4493
|
SUNMATE electronic Co., LTD | Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability.Axial leaded silicon zener diode with a power dissipation of 1.5W, voltage range from 3.3 to 200V, low leakage current, high reliability, and maximum forward voltage of 1.0V at 200mA.Axial leaded silicon zener diode with 1.5W power dissipation, 3.3 to 200V voltage range, low leakage current, high reliability, and high peak reverse power dissipation capability. | Original |
N 449 Price and Stock
Microchip Technology Inc 1N4493US-TRDIODE ZENER 150V 1.5W D5A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1N4493US-TR | Digi-Reel | 100 | 1 |
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Buy Now | |||||
Microchip Technology Inc 1N4494US-TRDIODE ZENER 160V 1.5W D5A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1N4494US-TR | Cut Tape | 100 | 1 |
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Buy Now | |||||
Microchip Technology Inc 1N4490US-TRDIODE ZENER 110V 1.5W D5A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1N4490US-TR | Reel | 100 | 100 |
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Buy Now | |||||
Microchip Technology Inc JANTX1N4491US-TRDIODE ZENER 120V 1.5W D5A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JANTX1N4491US-TR | Reel | 100 | 100 |
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Buy Now | |||||
Microchip Technology Inc 1N4491US-TRDIODE ZENER 120V 1.5W D5A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1N4491US-TR | Digi-Reel | 95 | 1 |
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Buy Now | |||||
N 449 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Ordering number:EN4493 F P 204 N o.4493 P N P /N P N E p ita x ia l P la n a r S ilicon T ra n s is to r s SAiYO Push-Pull Circuit Applications Features • C om posite type w ith a P N P tr a n s is to r a n d a n N P N tr a n s is to r in one p a ck ag e, fa c ilita tin g h ig h -d e n sity |
OCR Scan |
EN4493 10Ib2 --500m FP204 | |
SM 4108
Abstract: sm 4109 5956b
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OCR Scan |
1N5954D MLLS954B MLL5954B-1 LL5954C LL5954C-1 LL5954D-1 J59S4B 1N4494 4494U 5955B SM 4108 sm 4109 5956b | |
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Contextual Info: Y30KKE FAST TURN-OFF THYRISTOR Features: Interdigitated amplifying gates Fast turn-on and high di/dt n Low switching losses Typical Applications n Inductive heating n Electronic welders n Self-commutated inverters IT AV VDRM/VRRM tq ITSM 449A 800~1800V |
Original |
Y30KKE KT25aT | |
application notes cmx867
Abstract: FSK DEMODULATOR 9600 baud 1N4004 33PF CMX867 CMX868 v.23 fsk 1200 bps modem
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Original |
CMX867 600/600bps 1200bps 300/300bps CMX868 2400bps 22bis CMX867D2 24-pin application notes cmx867 FSK DEMODULATOR 9600 baud 1N4004 33PF CMX867 v.23 fsk 1200 bps modem | |
64 QAM modulator demodulator
Abstract: CMX868D2 1N4004 33PF CMX868 QAM FSK demodulator modem v.22
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CMX868 22bis 2400/2400bps 600/600bps 1200bps 300/300bps CMX868D2 24-pin 64 QAM modulator demodulator CMX868D2 1N4004 33PF CMX868 QAM FSK demodulator modem v.22 | |
CRT9007
Abstract: AD10 AD11 AD12 AD14 CRT97C11 VDA13
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OCR Scan |
CRT97C11 CRT9007 AD10 AD11 AD12 AD14 VDA13 | |
2SK440
Abstract: J-10 2SK44
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OCR Scan |
44clb2a5 2SK440 J-10 2SK44 | |
2SK535
Abstract: Hitachi Scans-001
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OCR Scan |
44Tb20S 2SK535Â 2SK535( 2SK535 Hitachi Scans-001 | |
LTC5588-1
Abstract: LTC5540 LTC5543 LTC5542
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LTC5588-1 200MHz 6000MHz 31dBm 2140MHz 35dBm 10ns/17ns 24-Lead LTC5588-1 LTC5540 LTC5543 LTC5542 | |
LTC5588-1
Abstract: thermistor SCK 082 J226 27J36 6SEPC680M LTC2630 LTC5588IPF-1 vco 6ghz SCK 035 thermistor
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LTC5588-1 200MHz 6000MHz 31dBm 2140MHz 35dBm 10ns/17ns 24-Lead LTC5588-1 thermistor SCK 082 J226 27J36 6SEPC680M LTC2630 LTC5588IPF-1 vco 6ghz SCK 035 thermistor | |
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Contextual Info: PD -93992A IRF1405S IRF1405L AUTOMOTIVE MOSFET Typical Applications n n n n n Benefits n n n n n n HEXFET Power MOSFET Electric Power Steering EPS Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Advanced Process Technology Ultra Low On-Resistance |
Original |
-93992A IRF1405S IRF1405L AN-994. | |
LT5554
Abstract: LT5571 LT5570 LT5568
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LTC5598 1600MHz 700MHz CDMA2000, 140MHz 900MHz 26dBm 12dBm 10MHz LT5554 LT5571 LT5570 LT5568 | |
J599
Abstract: j1765 LT5570 j2833 Image Reject Mixer 7Ghz circuit diagram of 13.56MHz RF Generator J1930 LT5568 j306 j452
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Original |
LTC5598 1600MHz 140MHz 900MHz 160dBm/Hz 55dBm 400MHz J599 j1765 LT5570 j2833 Image Reject Mixer 7Ghz circuit diagram of 13.56MHz RF Generator J1930 LT5568 j306 j452 | |
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Contextual Info: LTC3523/LTC3523-2 Synchronous 600mA Step-Up and 400mA Step-Down DC/DC Converters FEATURES n n n n n n n n n n n DESCRIPTION Dual High Efficiency DC/DC Converters: Step-Up VOUT = 1.8V to 5.25V, ISW = 600mA Step-Down (VOUT = 0.615V to 5.5V, IOUT = 400mA) 1.8V to 5.5V Input Voltage Range |
Original |
LTC3523/LTC3523-2 600mA 400mA 600mA) 400mA) LTC3523) LTC3523-2) 16-Lead 3523/LTC3523-2 | |
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QB 2104 TRANSISTOR
Abstract: BTS 2104
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CLC5903 CLC5957 12-bit CLC5526 300MHz QB 2104 TRANSISTOR BTS 2104 | |
diode t25 4 L5
Abstract: 2SK513 2sk513 o DIODE T25 4 Jo hitachi 2sk513 RA26
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OCR Scan |
449620b 1Q089-q 2SK513 T0-220AB) -2SK513 diode t25 4 L5 2sk513 o DIODE T25 4 Jo hitachi 2sk513 RA26 | |
f4496Contextual Info: HITACHl/íOPTOELECTRONICS> 449B2ÜS '‘HT TÄCHl / ÜPl'ÚtCtO IK U N Í U S T 73 D E | 4 4Tb2DS QGIDIEÌ 73C 10129 D PM1220B-SILICON N-CHANNEL MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • P o w e r M O S FE T M o d u le . • L o w O n R e s is ta n c e . |
OCR Scan |
449B2 PM1220BSILICON f4496 | |
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Contextual Info: HMP8190, HMP8191 Data Sheet May 1999 File Num ber 4499.1 NTSC/PAL Video Encoder Features T he H M P 8 19 0 and HM P8191 are N T S C and PAL e n cod ers • M N T S C and (B, D, G, H, I, M, N, NC) PAL O peration d e sig ned for use in system s requiring the ge ne ration of high- |
OCR Scan |
HMP8190, HMP8191 P8191 16-Bit | |
2SK296
Abstract: f4496
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OCR Scan |
449BX0S O-220AB) -2SK296 2SK296 f4496 | |
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Contextual Info: PD - 97034 IRF4905SPbF IRF4905LPbF HEXFET Power MOSFET Features n n n n n n n Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S |
Original |
IRF4905SPbF IRF4905LPbF IRF4905S O-262 AN-994. | |
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Contextual Info: PD -95486 IRF1407SPbF IRF1407LPbF Benefits n n n n n n n Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description HEXFET Power MOSFET |
Original |
IRF1407SPbF IRF1407LPbF EIA-418. | |
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Contextual Info: PD - 97470 AUIRF3710Z AUIRF3710ZS AUTOMOTIVE GRADE HEXFET Power MOSFET Features n n n n n n n Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * |
Original |
AUIRF3710Z AUIRF3710ZS | |
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Contextual Info: PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features n n n n n n n HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant |
Original |
AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL | |
transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
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OCR Scan |
N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K | |