MX26 Search Results

Contextual Info: In-Circuit Programming of the MX26C1024A 1M-Bit 64Kx16 CMOS Multiple-Time-Programmable ROM Application Note 09/16/97 -This application note describes how to erase and program the MX26C1024A, 1M-bit MTP

MX* 64M-Bit eprom

Contextual Info: MX26L6420 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • 4,194,304 x 16 byte structure • Single Power Supply Operation - 3.0 to 3.6 volt for read, erase and program operations • Low VCC write inhibit is equal to or less than 2.5V

IN3064

Abstract: MX26C1000B MX26C1000BMC-90 MX26C1000BPC-90 MX26C1000BQC-90
Contextual Info: ADVANCE INFORMATION MX26C1000B 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM FEATURES • 128Kx 8 organization • Single +5V power supply • +12V programming voltage • Fast access time:90/100/120/150 ns • Totally static operation • Completely TTL compatible

26C1000A

Abstract: IN3064 MX26C1000A MX27C1000 26C1000 mx26c1000aqc-12
Contextual Info: Introduction Selection Guide PRELIMINARY MX26C1000A 1M-BIT[128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • • • Standby current: 100µA • 100 minimum erase/program cycles • Package type: - 32 pin PDIP Y - 32 pin SOP

MX26C1024A

Abstract: xx40h
Contextual Info: INDEX PRELIMINARY MX26C1024A 1M-BIT [64K x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% program/erase voltage Fast access time: 70/90/100/120 ns

Contextual Info: ADVANCE INFORMATION MX26C1000B 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM FEATURES • • • • • • • Operating current:30mA • Standby current: 100uA • 100 minimum erase/program cycles • Typical fast programming cycle duration 10us/byte

Contextual Info: ADVANCED INFORMATION MX26C4000 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM FEATURES • 512K x 8 organization • Single power supply operation • • • • • • • • -5.0V only operation for read, erase and program operation Electric erase instead of UV light erase

Contextual Info: ADVANCED INFORMATION MX26LV008T/B Macronix NBit TM Memory Family 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY FEATURES • Extended single - supply voltage range 3.0V to 3.6V • 1,048,576 x 8 • Single power supply operation

A0-A21

Abstract: Q0-Q15
Contextual Info: ADVANCED INFORMATION MX26L6413 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • 4,194,304 x 16 byte structure • Single Power Supply Operation • • • • • Minimum 100 erase/program cycle • Status Reply - 2.7 to 3.6 volt for read, erase andprogram

Contextual Info: PRELIMINARY ììììììììì* I v l ^ l i g MX26C1 024A i 1 M-BIT [64K x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% program/erase voltage

MX265LH

Abstract: IC KD 2107 6 PIN
Contextual Info: ->AR ¿« me MX265 M X* COM, INC. Preliminary Information DATA BULLETIN January 1992 CTCSS Encoder/Decoder FEATURES • 39 CTCSS Tones + Notone • Scanning of any Channel • Serial jxP Interface APPLICATIONS • • • • Wireless Intercom Sport Radios

MX26L3220

Abstract: Q0-Q15
Contextual Info: ADVANCED INFORMATION MX26L3220 32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • 2,097,152 x 16 byte structure • Single Power Supply Operation • • • • Status Reply - 2.7 to 3.6 volt for read, erase, and program operations Low Vcc write inhibit is equal to or less than 2.5V

26lv008

Abstract: MX26LV008T SA10 SA11 SA12 SA13 SA14 SA15 SA16 1M NOR FLASH MXIC
Contextual Info: MX26LV008T/B Macronix NBit TM Memory Family 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY FEATURES • Extended single - supply voltage range 3.0V to 3.6V • 1,048,576 x 8 • Single power supply operation - 3.0V only operation for read, erase and program

at-mx26f

Abstract: MX26F Transceiver AT-MX25F MX26F Transceivers Micro Networks apple logos 617 connector Allied Components collision light
Contextual Info: AT-MX25F & AT-MX26F, Fiber Micro Transceivers AT-MX25F, Fiber micro transceiver with SMA connector AT-MX26F, Fiber micro transceiver with ST connector KEY FEATURES IEEE 802.3 10FL/FOIRL compliant, Ethernet Version 1.0 and 2.0 compatible and FL/FOIRL support

26c512

Abstract: MX26C512 MX26C512A IN3064 MX27C512 PM0455 26C512A MX26C512APC-12
Contextual Info: INDEX MX26C512A 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns

MX26L12811MC

Abstract: Q0-Q15
Contextual Info: MX26L12811MC 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY FEATURES • 3.0V to 3.6V operation voltage • Block Structure - 128 x 128Kbyte Erase Blocks • Fast random / page mode access time - 120/25 ns Read Access Time page depth:4-word • 32-Byte Write Buffer

01FFFF

Abstract: X0002 MX26L12811MC
Contextual Info: MX26L12811MC 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY FEATURES • 3.0V to 3.6V operation voltage • Block Structure - 128 x 128Kbyte Erase Blocks • Fast random / page mode access time - 120/25 ns Read Access Time page depth:4-word • 32-Byte Write Buffer

Contextual Info: PRELIMINARY MX26LV160 Macronix NBit TM Memory Family 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY FEATURES • Extended single - supply voltage range 3.0V to 3.6V • 2,097,152 x 8 / 1,048,576 x 16 switchable

Contextual Info: ADVANCE INFORMATION MX26C4000B 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM FEATURES • 512Kx 8 organization • Single +5V power supply • +12V programming voltage • Fast access time:70/90/100/120/150 ns • Totally static operation • Completely TTL compatible

Contextual Info: ADVANCED INFORMATION MX26L6419 64M [x16] SINGLE 3V PAGE MODE MTP MEMORY FEATURES • 2.7V to 3.6V operation voltage • Block Structure - 64 x 64Kword Erase Blocks • Fast random / page mode access time - 100/30 ns Read Access Time page depth:8-word • 128-bit Protection Register

Contextual Info: ADVANCE INFORMATION MX26C1000B 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM FEATURES • 128Kx 8 organization • Single +5V power supply • +12V programming voltage • Fast access time:90/100/120/150 ns • Totally static operation • Completely TTL compatible

26LV004

Contextual Info: ADVANCED INFORMATION MX26LV004T/B Macronix NBit TM Memory Family 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY FEATURES • Extended single - supply voltage range 3.0V to 3.6V • 524,288 x 8 • Single power supply operation

MX26L1620

Abstract: Q0-Q15 flash memory 5v 16M-bit 48 TSOP
Contextual Info: ADVANCED INFORMATION MX26L1620 16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • 1,048,576 x 16 byte structure • Single Power Supply Operation • • • • • • 10-year data retention • Status Reply - 2.7 to 3.6 volt for read, erase, and program

Contextual Info: A D VANCED INFORMATION MX26C4000 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM FEATURES • 512K x 8 organization • Completely TTL compatible • Operating current: 30mA • Single power supply operation -5.0V only operation for read, erase and program