XX40H Search Results

Contextual Info: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

Contextual Info: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel

Contextual Info: in te l 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads Backwards-Compatible with 28F008SA Command-Set SmartVoltage Technology — User-Selectable 3.3V or 5V Vqc

Contextual Info: in te i ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • Effective Zero Wait-State Performance up to 33 MHz — Synchronous Pipelined Reads ■ SmartVoltage Technology — User-Selectable 3.3V or 5V V cc — User-Selectable 5V or 12V Vpp

Contextual Info: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C

Contextual Info: PRODUCT PREVIEW int ! VALUE SERIES 200 FLASH MEMORY CARD 8 - 6 4 MEGABYTES ¡MC008FLSG, ¡MC016FLSG, ¡MC024FLSG ¡MC032FLSG, ¡MC048FLSG, ¡MC064FLSG Low-Cost Linear Flash Card — Intel StrataFlash Memory Technology Automated Write and Erase Algorithms

MSP430x12xx

Abstract: ADC12 MSP430 MSP430F1101 MSP430F11X1 SLAU049F
Contextual Info: MSP430x1xx Family User’s Guide 2006 Mixed Signal Products SLAU049F IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

M3062

Abstract: TA2140 csc 2313 m3062lfgpgp u3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: CAT28F102 L icen sed In tel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 55/70/90/100/120 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

LTS 543 seven segment display

Abstract: seven segment display LTS 543 7 segment display LTS 542 LTS 543 lts 543 series pin diagram lts 542 pin diagram 7 segment display 10 pin LTS 543 7 segment display LTS 543 bose 6201 lts 543 pin configuration
Contextual Info: TMS320C5x User’s Guide Literature Number: SPRU056D June 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information

bose 6201

Abstract: Allen Bradley Power Supply schematic diagram allen bradley RCR20 voice control robot tms320 54x mcbsp tms320c54x MEMORY MAPPED REGISTERS ST0 ST1 TMS320 application manual spru288 JTAG MINI LT 542 seven segment display data sheet
Contextual Info: TMS320C54x DSP Reference Set Volume 1: CPU and Peripherals Literature Number: SPRU131F April 1999 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

DT28F016SA

Abstract: DD28F032SA 28F008SA 28F016SA 28F016SV 28F032SA 28F008SA-Compatible
Contextual Info: E 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications n n n n n n n User-Selectable 3.3V or 5V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate

Contextual Info: CAT28F102 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Fast Read Access Time: 45/55/70/90 ns ■ 64K x 16 Word Organization ■ Low Power CMOS Dissipation: ■ Stop Timer for Program/Erase –Active: 30 mA max CMOS/TTL levels –Standby: 1 mA max (TTL levels)

INTEL ES

Abstract: XX96H 297372
Contextual Info: int ! ADVANCE INFORMATION 28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY Effective Zero Wait-State Performance up to 33 MHz - Synchronous Pipelined Reads • Backwards-Compatible with 28F008SA Command-Set . 2 pA Typica| Deep Power.Down

xx40h

Abstract: nb2b
Contextual Info: il Il h Th Lt ST •Iff /S P relim inary E M I C O N D U C T O R CAT28F202 2 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 120/150/200 ns ■ 128K x 16 Word Organization ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels -Standby: 1 mA max (TTL levels)

26C1024

Contextual Info: M S IC M X26 C 10 24A 1 M-BIT 6 4 K x 1 6 CMOS MULTIPLE-TIME-PROGRAMMABLE ROM FEATURES • • • • • • 64K words by 16-bit organization +5V operating power supply Electric erase instead of UV light erase +12V±5% p rog ram/e rase voltage Fast access time: 70/90/100/120 ns

MX28F2100B

Contextual Info: Introduction Selection Guide PRELIMINARY MX28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

PC14

Abstract: 2ah 2037 philips ak 141-15
Contextual Info: REJ09B0126-0101Z M16C/6N Group 16 M16C/6NL, M16C/6NN Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 1.01

28F640J5

Abstract: iMC016FLSG 29062
Contextual Info: E PRODUCT PREVIEW VALUE SERIES 200 FLASH MEMORY CARD 8 – 64 MEGABYTES iMC008FLSG, iMC016FLSG, iMC024FLSG iMC032FLSG, iMC048FLSG, iMC064FLSG n n n n n n n Low-Cost Linear Flash Card  Intel StrataFlash TM Memory Technology High-Performance Writes  12 µs Typical Byte Write

28F320J5

Abstract: 28F640J5 intel DOC N15H
Contextual Info: E PRODUCT PREVIEW SERIES 200 FLASH MEMORY MINIATURE CARD 4, 8, 16 MBYTES iFM004G, iFM008G and iFM016G n Low-Cost Linear Flash Card  Intel StrataFlash TM Memory Flash Technology n n n n n Fast Read Performance  150 ns Max Access Time High-Performance Writes

TRANSISTOR BJ 131

Abstract: PC14 p088
Contextual Info: REJ09B0124-0101Z M16C/6N Group 16 M16C/6NK, M16C/6NM Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 1.01

MX28F2100T

Abstract: MX28F2100TTC90
Contextual Info: Introduction Selection Guide PRELIMINARY MX28F2100T 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

SD16MEM0

Abstract: SD16A SD16UNI 001H MSP430 SD16 schematic PWM inverter MSP430x22xx MSP430x2xx ADC10DTC1
Contextual Info: MSP430x2xx Family User’s Guide 2005 Mixed Signal Products SLAU144A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

Contextual Info: User’s Manual V854TM 32/16-Bit Single-Chip Microcontroller Hardware µPD703006 µPD703008 µPD70F3008 µPD703008Y µPD70F3008Y Document No. U11969EJ3V0UM00 3rd edition Date Published March 1999 N CP(K) Printed in Japan 1997 [MEMO] 2 User’s Manual U11969EJ3V0UM00