MW4IC915NB Search Results
MW4IC915NB Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MW4IC915NBR1 | Freescale Semiconductor | RF LDMOS Wideband Integrated Power Amplifiers | Original | 695.37KB | 20 | ||
| MW4IC915NBR1 | Freescale Semiconductor | RF Amplifiers, RF/IF and RFID, IC PWR AMP RF 26V 15W TO-272-16 | Original | 18 | |||
| MW4IC915NBR1 | Motorola | RF LDMOS Wideband Integrated Power Amplifiers | Original | 337.95KB | 16 |
MW4IC915NB Price and Stock
NXP Semiconductors MW4IC915NBR1RF Amp Single Power Amp 1GHz 28V 17-Pin TO-272 W T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MW4IC915NBR1 | 1,000 | 110 Weeks | 1 |
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Buy Now | |||||
| MW4IC915NBR1 | Cut Strips | 240 | 110 Weeks | 1 |
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Freescale Semiconductor MW4IC915NBR1RF MOSFET LDMOS 65V 1GHz 16L-FLG T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MW4IC915NBR1 | 19 | 1 |
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MW4IC915NB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION |
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mw4ic915mw4ic915nbr1mw4ic915mb/gmbmw4ic915mbr1+1 | |
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Contextual Info: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage |
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mw4ic915nmw4ic915nb/gnbmw4ic915nbr1mw4ic915gnbr1 | |
GM 950 motorola
Abstract: MW4IC915MBR1 Marking Z7 Gate Driver 1206 cms 1206 cms diode marking Z4 MW4IC915MB A113 AN1955 AN1987
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mw4ic915mw4ic915nbr1mw4ic915mb/gmbmw4ic915mbr1+10 | |
mw4ic915nb
Abstract: AN1977 AN1987 MW4IC915GNBR1 MW4IC915NBR1 A113 AN1955 ic marking z7 GM 950 motorola
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mw4ic915nmw4ic915nb/gnbmw4ic915nbr1mw4ic915gnbr1+7 | |
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Contextual Info: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescales newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage |
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mw4ic915nmw4ic915nb/gnbmw4ic915nbr1mw4ic915gnbr1 | |
MPC5634M
Abstract: MRF6VP11KH mw4ic2020nb S12XEQ512 MPC5516E MXC300-30 MPC5602P MSC7120 mpx6115 S08DZ128
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dsp56311evmdsp56311vf150dsp56311vl150dsp56321vf200+16 | |
stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
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sg1009q32005mmm6025mc13820mrf377hr3+12 | |
MC908GP32
Abstract: 9S12XHZ256 DSP56309VF100A 9S08DZ32 mpx6115 MXC300-30 xc912bc32 DSP56309AG100A MRF6VP2600H 9S08SG16
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sg1000crq42007sg187sg1002q42007sg1004q42007+10 | |
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
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power transistors tablemw6s010nr1mrfe6s9060nmhw6342tn+6 | |
MRF8P9040N
Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
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mrf8p9040nrf amplifier mhz doherty 470-860mrf1513nt1 s2pmrf8s21100h+6 | |
MC9S12XDP384
Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
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sg1000crq32005mc9s12xdp384mpx7007sg187+7 | |
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Contextual Info: Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage |
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mw4ic915mw4ic915mb/gmbmw4ic915nbr1mw4ic915gnbr1+2 | |
MS08QD4
Abstract: MCF52236 MPC56xx instruction set digrf MCF52252 MMM6000 MMM7010 MPC5602B MS08EL32 MPC56xx
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sg1000minisg1000crsg187sg1002+16 | |
A113
Abstract: AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915NBR1 GM 950 motorola 686 CAPACITOR
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mw4ic915mw4ic915mb/gmbmw4ic915nbr1mw4ic915gnbr1+7 | |
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MMM6029
Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
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sg1009q42005mmm6025mmm6035mc13820+16 | |
9s12ha48
Abstract: 9S12XHZ512 9s12ha32 9s12hy64 mw4ic2020nb MPC5516E 9S08DZ32 MPC8640D MXC300-30 SG187
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sg1000crq42008sg187sg1002q42008sg1004q42008+9 | |
MPX6115
Abstract: S08DZ128 mw4ic2020nb S12XDT256 MPC5516E SG1002 DSPB56364AF100 dspc56371af180 S12XDG128 S08SG16
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sg1000crq22009sg187sg1002q22009sg1004q22009+10 | |
gsm booster circuit
Abstract: MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit circuit booster gsm MRF6VP11KH MW6S004N MC44BS373
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sg1009q22009mrf6vp11khmrf6vp21khmrf6vp41kh/hs+9 | |